• Title/Summary/Keyword: Si Nanowires

검색결과 168건 처리시간 0.029초

DNA 분자를 형틀로 이용한 Polypyrrole 나노와이어의 합성시 pH 효과 (Effect of pH on Synthesis of Polypyrrole Nanowires by Using DNA Molecule Templates)

  • 최용훈;김경섭;김남훈;노용한
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.109-110
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    • 2007
  • Pyrrole and DNA can be used for synthesis of conducting nanowires. Protonated pyrrole and negatively charged DNA are absorbed by electrostatic interaction. The level of absorbance is related to pH of pyrrole. Therefore, DNA immobilized and aligned on the 3-aminopropyltrimethoxysi1ane (APTES) modified Si surface. Positive pyrrole monomers was deposited on aligned DNA for the synthesis of nanowire in various pH condition. And polypyrrole nanowires were synthesized by polimerization with ammonium persulfate (APS). These polypyrrole nanowires were measured by AFM, and then we found optimal pH level for the synthesis of nanowires.

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산소 분위기에서 열처리시 ZnS 나노선의 발광 강도 변화 (Enhancement of Photoluminescence Intensity of ZnS Nanowires by Annealing in O2)

  • 권진업;이종우
    • 한국표면공학회지
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    • 제45권5호
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    • pp.193-197
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    • 2012
  • The influence of annealing process in an $O_2$ atmosphere on the photoluminescence (PL) spectra properties of ZnS nanowires has been investigated. ZnS nanowires with the diameters approximately 100 nm and the lengths a few tens micrometers were synthesized by evaporating ZnS powders on Si substrates while using an Au thin film as a catalyst. ZnS nanowires had an NBE emission band at 430 nm in the violet region. The emission intensity was improved drastically by a process in which ZnS nanowires were heat-treated at $500^{\circ}C$ in an $O_2$ atmosphere for 45 minutes.

Fabrication and Characterization of Free-Standing Silicon Nanowires Based on Ultrasono-Method

  • Lee, Sung-Gi;Sihn, Donghee;Um, Sungyong;Cho, Bomin;Kim, Sungryong;Sohn, Honglae
    • 통합자연과학논문집
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    • 제6권3호
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    • pp.170-175
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    • 2013
  • Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

Synthesis of Vertically Aligned SiNW/Carbon Core-shell Nanostructures

  • 김준희;김민수;김동환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.488.2-488.2
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    • 2014
  • Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

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ZnO 나노와이어에 ALD 방법으로 균일하게 코팅된 $Al_{2}O_{3}$ (Conformal $Al_{2}O_{3}$ nano-coating of ZnO nanowires)

  • 황주원;민병돈;이종수;김기현;강명일;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.47-50
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    • 2002
  • ZnO nanowires were coated conformally with aluminum oxide ($Al_{2}O_{3}$) material by atomic layer deposition (ALD). The ZnO nanowires were first synthesized on a Si (100) substrate at $1380^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts; the length and diameter of these ZnO nanowires are $20\sim30{\mu}m$ and $50{\sim}200$ nm, respectively. $Al_{2}O_{3}$ films were then deposited on these ZnO nanowires by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_{2}O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanowires revealed that 40nm-thick $Al_{2}O_{3}$ cylindrical shells surround the ZnO nanowires.

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습식공정으로 형성된 구리산화물 나노와이어의 전계방출특성 향상 (Enhancement of Field Emission Characteristics of CuO Nanowires Formed by Wet Chemical Process)

  • 성우용;김왈준;이승민;이호영;박경호;이순일;김용협
    • 한국표면공학회지
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    • 제37권6호
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    • pp.313-318
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    • 2004
  • Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.

VLS 방법을 이용한 단결정 InxGa1-xAs 나노와이어 성장과 조성비 변화에 대한 특성측정 (Single Crystalline InxGa1-xAs Nanowires on Si (111) via VLS Method)

  • 신현욱;신재철;최정우
    • 한국진공학회지
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    • 제22권2호
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    • pp.105-110
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    • 2013
  • Vapor-Liquid-Solid 방법을 이용하여 다양한 성장온도와 V/III 비율 아래 $In_xGa_{1-x}As$ 나노와이어를 실리콘 (111) 기판 위에 성장하였다. 나노와이어 성장은 화학기상증착(MOCVD)장치를 이용하였으며, 나노와이어의 구조적 특성은 주사전자현미경 및 투과전자현미경을 이용하여 분석하였다. 나노와이어의 조성비 분포를 확인하기 위하여 투과전자현미경에 장착된 Energy dispersive X-ray 분석기로 나노와이어의 길이에 따른 In과 Ga의 조성비를 측정하였다. 성장온도와 V/III 비율이 올라갈수록 In 조성비가 나노와이어 내부에서 크게 변하는 것을 확인하였는데, 이는 Vapor-Solid 방식에 의한 나노와이어 표면에서의 성장이 증가하기 때문으로 이해된다.

산화 실리콘 막을 이용한 실리카 나노 와이어의 형성 : 산소 효과 (Formation of Silica Nanowires by Using Silicon Oxide Films: Oxygen Effect)

  • 윤종환
    • 새물리
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    • 제68권11호
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    • pp.1203-1207
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    • 2018
  • 본 연구에서는 산소 함유량이 다른 산화 실리콘 막을 사용하여 실리카 나노 와이어를 형성하고, 실리카 나노 와이어의 미세구조 및 물리적 특성을 Si 웨이퍼를 사용하여 형성된 실리카 나노 와이어와 비교 분석하였다. 산화 실리콘 막은 플라즈마 화학 기상 증착 방법을 사용하여 제조하였으며, 실리카 나노 와이어는 산화 실리콘 막 표면에 촉매 물질로 니켈 막을 진공 증착한 후 열처리를 통해 형성하였다. 산소 함유량이 약 50 at.% 이하의 산화 실리콘 막의 경우 나노 와이어 형성 메커니즘, 미세구조 및 물리적 특성 등에서 실리콘 웨이퍼의 경우와 거의 차이점이 없었으며, 특히 나노 와이어의 굵기의 균일성은 산화 실리콘 막에서 더 우수한 거동을 나타내었다. 이러한 결과는 저가로 양질의 실리카 나노 와이어를 제조하는 대체재로서 산화 실리콘 막의 유용성을 제시한다.

기상증착방법에 의한 이산화규소 나노와이어의 성장 (Growth of $SiO_2$ nanowire by VS method.)

  • 노대호;김재수;변동진;진정근;김나리;양재웅
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.115-115
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    • 2003
  • Silica nanostructures have been attached considerable attention because of theirs potential application in mesoscopic research and the potential use of large surface area structure of catalysts. SiO2 nannowire and nanorods was synthesized various methods including thermal evaporation, chemical vapor deposition (CVD), and laser ablation methods. In this experiments, SiO2 nanowire were grown using thermal evaporation method followed by VS (Vapor-Solid) growth mechanisms. Grown SiO2 nanowires were amorphous phases because of its low growth temperatures. Grown nanowires diameters were about 20-40nm at all growth conditions, but its microstructres were different by that used substrate because of it's oxygen contents.

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Ag Paste Using Ag Nanowires

  • Hong, Jun-Ui;Kim, Dae-Jin;Kong, Byung-Seon;Kim, Sang-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.546-546
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    • 2012
  • Traditional screen printing is still a dominant method to print electrodes on c-Si solar cells. In order to achieve higher efficiency for c-Si solar cells, improvement of the electrode material is one of the key approaches. Shadowing loss can be reduced by using high aspect ratio finger electrode with width of finger electrode less than 80um. The rheological properties of Ag paste for applying c-Si solar cells are improved by using Ag nanowires. The printing properties including the aspect ratio of printed electrode can be improved with higher Thixotropic index (T.I.) values.

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