• Journal of Powder Materials
• /
• v.13 no.4 s.57
• /
• pp.285-289
• /
• 2006

Co-Fe-Ni-B-Si-Cr based amorphous strips containing nitrogen were manufactured via melt spinning, and then devitrified by crystallization treatment at the various annealing temperatures of $300^{\circ}C{\sim}540^{\circ}C$ for up to 30 minutes in an inert gas $(N_2)$ atmosphere. The microstructures were examined by using XRD and TEM and the magnetic properties were measured by using VSM and B-H meter. Among the alloys, the amorphous ribbons of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ containing 121 ppm of nitrogen showed relatively high saturation magnetization. The alloy ribbons crystallized at $540^{\circ}C$ showed that the grain size of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ alloy containing 121 ppm of nitrogen was about f nm, which exhibited paramagnetic behavior. The formation of nano-grain structure was attributed to the finely dispersed Fe4N particles and the solid-solutionized nitrogen atoms in the matrix. Accordingly, it can be concluded that the nano-grain structure of 5nm in size could reduce the core loss within the normally applied magnetic field of 300A/m at 10kHz.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.1
• /
• pp.107-113
• /
• 2009

This study investigated the decomposition activities of toluene on 10 mol% Al-W-incorporated mesoporous titano (15 mol %) silicates. The mesopore sizes observed in the transmission electron microscopy images ranged from 2.0 to 5.0 nm, and the pores were irregular on the addition of 10 mol% Al or W ions, but changed to regular hexagonal forms with the simultaneous additions of Al and W. The X-ray photon spectroscopy results showed a shift of the special peak for Ti2p in Al-incorporated mesoporous titanosilicates to a stronger binding energy compared to those of mesoporous titanosilicates and Al-incorporated mesoporous titanosilicates. Three O1s peaks in the spectra of the Al and W coexisted samples were observed at 530.5 and 531.7, 533, and 533.7eV, which were assigned to $Ti-Os\;in\;TiO_2\;and\;Ti_2O_3,\;Si-O\;in\;SiO_2\;and\;Al-O\;in\;Al_2O_3$, respectively. The toluene molecules desorbed at lower temperatures over W-incorporated mesoporous titanosilicates, and the amounts of toluene desorbed were also small; however, Al-incorporated mesoporous titanosilicates adsorbed much more toluene, particular over $Al_7.5-W_2.5-Ti_15-Si_75$. The photocatalytic decomposition of toluene was more enhanced over $Al_7.5-W_2.5-Ti_15-Si_75$ than over Al- or W-incorporated mesoporous titanosilicates only.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.669-680
• /
• 1994

Oxidation behaviour of TiAl intermetallic compounds with the addition of Cr, V, Si, Mo, or Nb was investigated at 900~$1100^{\circ}C$ under the atmospheric environment. The reaction products were examined by XRD, SEM equipped with WDX. The weight gain by continuous oxidation increased with the addition of Cr or V, but there was less weight gain when Mo, Si or Nb was added individually. he oxidation rate of Cr- or V-added TiAl was always larger than that of TiAI. However, oxidation rate of Si-, Mo- or Nb-added TiAl was almost same or smaller than that of TiAI. Thus, it is concluded that the addition of Cr or V did not improve the oxidation resistance, whereas the addition of Si, Mo or Nb improved the oxidation resistance. Oxides formed on TiAl with Mo, Si, and Nb were found to be more protective, resulting from the decrease in diffusion rate of the alloying elements and oxygen. Nb strengthened the tendency to form $AI_{2}O_{3}$ in the early stage of oxidation, due to the continuous $AI_{2}O_{3}$ layer formation and dense $Tio_{2}+AI_{2}O_{3}$ layer. According to the Pt-marker test of TiAI- 5wt%Nb, oxygen diffused mainly inward while oxides were formed on the substrate surface. Upon thermal cyclic oxidation at $900^{\circ}C$, it is shown that the addition of Cr or Nb improved the adherence of oxide scale to the substrate.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1696-1698
• /
• 1999

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• Proceedings of the KIEE Conference
• /
• 1987.07b
• /
• pp.1003-1007
• /
• 1987

The system start-up function of TDX-1A that should be executed during installation or emergency has been designed to meet requirements of the distributed real time control system. It is performed in a centralized manner by the dedicated processor according to the maintenance and administration mechanism of the system. Upon execution, it provides information on the system state for the ESS personal. In additions, it protects the loss the charging and statistics data, and minimizes the effect on the customer service. This paper describes the design concept of the system startup function and its implementation method and also calculates its the execution time.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1490-1492
• /
• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.04a
• /
• pp.119-119
• /
• 2000

A new type of low voltage driven SrTiO3 varistor was investigated. $SrTi3_3$ sintered with CuO-SiO2 additions, the sintering temperature was reduced to 1250-1300C. With the sintering additives, the semiconducting SrTi03 was able to fabricate single time sintering in reducing atmosphere(95% N2 + 5% H2), The non-linear coefficient value was 10.3 and the operating voltage was about 7 V.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.3
• /
• pp.157-160
• /
• 2002

The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.809-814
• /
• 1998

In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.289-292
• /
• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.