• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.267-272
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• 2000

Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at $450^{\circ}C$ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to $450^{\circ}C$, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.181-181
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• 2010

현대 반도체 금속배선 연구에서는 기존에 쓰이던 Al (Aluminium) 금속배선 대신에 Cu (Copper) 금속배선 연구가 진행되고 있다. Cu는 Al 보다 비저항이 낮고, 녹는점도 Al보다 높다는 장점이 있지만 저온에서 기판인 Si (Silicon) 과 반응하고 접착력이 우수하지 못 하다는 단점이 있다. 이런 문제를 해결하기 위하여 확산방지막을 기판과 금속배선 사이에 삽입하는 방법이 제시 되었다. 확산방지막으로는 기존에 쓰이던 Ti (Titanium) 계열의 확산방지막과 W (Tungsten) 계열의 확산방지막이 있다. 이번 연구에서는 W 계열의 확산방지막에 불순물 C (Carbon) 과 N (Nitrogen) 을 첨가한 W-C-N 확산방지막 시편을 제조하였고, N2의 비율을 변화시키며 $600^{\circ}C$, $800^{\circ}C$열처리를 하였다. 본 실험의 결과로, 확산방지막의 $N_2$ 농도가 0, 0.5, 2 sccm으로 증가할수록 고온에서도 Elastic modulus 와 Hardness 값이 시편의 여러 영역에서 비교적 안정적으로 유지된다는 결과를 얻었다. 이 결과로부터 W-C-N 박막의 질소 농도에 따라 고온에서도 비교적 안정적으로 유지된다는 결과를 얻었다. 본 연구에서 시편은 RF magnetron sputtering 방법으로 제작하였고 Elastic modulus와 Hardness의 측정은 Hysitron사의 Triboindenter를 이용하였다. Indenting에 사용된 압입팁은 Berkovich tip을 사용하였다.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.173-179
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• 2018

Electrochemical characterization was conducted on poly(vinyl alcohol) (PVA)-ceramic composite (PVA-CC) separators for supercapacitor applications. The PVA-CC separators were fabricated by mixing various ceramic particles including aluminum oxide ($Al_2O_3$), silicon dioxide ($SiO_2$), and titanium dioxide ($TiO_2$) into a PVA aqueous solution. These ceramic particles help to create amorphous regions in the crystalline structure of the polymer matrix to increase the ionic conductivity of PVA. Supercapacitors were assembled using PVA-CC separators with symmetric activated carbon electrodes and electrochemical characterization showed enhanced specific capacitance, rate capability, cycle life, and ionic conductivity. Supercapacitors using the $PVA-TiO_2$ composite separator showed particularly good electrochemical performance with a 14.4% specific capacitance increase over supercapacitors using the bare PVA separator after 1000 cycles. With regards to safety, PVA becomes plasticized when immersed in 6 M KOH aqueous solution, thus there was no appreciable loss in tear resistance when the ceramic particles were added to PVA. Thus, the enhanced electrochemical properties can be attained without reduction in safety making the addition of ceramic nanoparticles to PVA separators a cost-effective strategy for increasing the ionic conductivity of separator materials for supercapacitor applications.

• Nuclear Engineering and Technology
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• v.53 no.1
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• pp.199-207
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• 2021

This paper deals with accurate image reconstruction of gamma camera using a coded-aperture mask based on pixel-type CsI(Tl) scintillator coupled with silicon photomultipliers (SiPMs) array. Coded-aperture imaging (CAI) system typically has a smaller effective viewing angle than Compton camera. Thus, if the position of the gamma source to be searched is out of the fully-coded field-of-view (FCFOV) region of the CAI system, artifacts can be generated when the image is reconstructed by using the conventional cross-correlation (CC) method. In this work, we propose an effective method for more accurate reconstruction in CAI considering the source distribution of partially-coded field-of-view (PCFOV) in the reconstruction in attempt to overcome this drawback. We employed an iterative algorithm based on compressed-sensing (CS) and compared the reconstruction quality with that of the CC algorithm. Both algorithms were implemented and performed a systematic Monte Carlo simulation to demonstrate the possiblilty of the proposed method. The reconstructed image qualities were quantitatively evaluated in sense of the root mean square error (RMSE) and the peak signal-to-noise ratio (PSNR). Our simulation results indicate that the proposed method provides more accurate location information of the simulated gamma source than the CC-based method.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.532-541
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• 2019

Information and communication technologies are developing rapidly as IC chip size becomes smaller and information processing becomes faster. With this development, digital circuit technology is being widely applied to mobile phones, wireless LANs, mobile terminals, and digital communications, in which high frequency range of GHz is used. In high-density electronic circuits, issues of noise and EMC(Electro-Magnetic Compatibility) arising from cross talk between interconnects or devices should be solved. In this study, sheet-type electromagnetic wave absorbers that cause electromagnetic wave attenuation are fabricated using composites based on soft magnetic metal powder and silicon rubber to solve the problem of electromagnetic waves generated in wireless communication products operating at the frequency range of 2.4 GHz. Sendust(Fe-Si-Al) and carbonyl iron(Fe-C) were used as soft magnetic metals, and their concentrations and sheet thicknesses were varied. Using soft magnetic metal powder, a sheet is fabricated to exhibit maximum electromagnetic attenuation in the target frequency band, and a value of 34.2dB(99.9 % absorption) is achieved at the target frequency.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.546-551
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• 2021

To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO₂-Al₂O₃-Y₂O₃, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5 % increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1009-1014
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• 2023

Muon tomography is a useful method for monitoring special nuclear materials (SNMs) such as spent nuclear fuel inside dry cask storage. Multiple Coulomb scattering of muons can be used to provide information about the 3-dimensional structure and atomic number(Z) of the inner materials. Tomography using muons is less affected by the shielding material and less harmful to health than other measurement methods. We developed a muon detector for muon tomography, which consists of a plastic scintillator, 64 long wavelength-shifting (WLS) fibers attached to the top of the plastic scintillator, and silicon photomultipliers (SiPMs) connected to both ends of each WLS fiber. The muon detector can acquire X and Y positions simultaneously using a position determination algorithm. The design parameters of the muon detector were optimized using DETECT2000 and Geant4 simulations, and a muon detector prototype was built based on the results. Spatial resolution measurement was performed using simulations and experiments to evaluate the feasibility of the muon detector. The experimental results were in good agreement with the simulation results. The muon detector has been confirmed for use in a muon tomography system.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.11-19
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• 2023

Recently with the rapid advancement of artificial intelligence (AI) technologies such as Chat GPT, AI semiconductors have become important. AI technologies require the ability to process large volumes of data quickly, as they perform tasks such as big data processing, deep learning, and algorithms. However, AI semiconductors encounter challenges with excessive power consumption and data bottlenecks during the processing of large-scale data. Thus, the latest packaging technologies are required for AI semiconductor computations. In this study, the authors have described packaging technologies applicable to AI semiconductors, including interposers, Through-Silicon-Via (TSV), bumping, Chiplet, and hybrid bonding. These technologies are expected to contribute to enhance the power efficiency and processing speed of AI semiconductors.