• Title/Summary/Keyword: Si(111)

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The Study of Low Temperature Firing Glass-Ceramics Substrate in Lithium Fluorhectorite

  • Choi, J-H;Park, D-H;Kim, B-I;Kang, W-H
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 1999.11a
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    • pp.111-115
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    • 1999
  • The $Li_2O-MgO-MgF_2-SiO_2$glasses with addition of $B_2O_3$ were investigated in order to make glass-ceramics for low temperature firing substrate. Glasses were made by melting at $1450^{\circ}C$ in the electronic furnace and crystallized at $750^{\circ}C$. After the crystallization, crystal phases and microstructure were observed. The crystal phases were polycrystalline of lithium boron fluorphlogopite and lithium fluorhectorite. The crystal shape was changed to grande type from needle type with the increase in $B_2O_3$ contents. Average particle size of the glass-ceramics aftar water swelling was $3.77{\mu}{\textrm}{m}$. The optimum sintering temperature and sintering shrinkage of the substrate were $900^{\circ}C$ and 13.4vol%, respectively.

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Factors Influencing the Success of IS Development Projects: Focusing on the Projects of the Public Sector (정보시스템 개발프로젝트의 성공도에 영향을 미치는 요인 - 공공부문의 정보시스템 구축사업을 중심으로 -)

  • Jang, Si-Young;Moon, Dae-Won;Oh, Jae-In
    • Asia pacific journal of information systems
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    • v.9 no.3
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    • pp.111-126
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    • 1999
  • Current audit reports on IS development projects provide useful information to stakeholders but have such limitations as the lack of quantification of audit results and the insufficient recommendations on success factors. The purpose of this study is to solve these limitations, leading audit reports to become of future-oriented contents and form. This research was conducted through the logical inference from the review on the related literature, the analysis of audit reports from 1996 to 1998, and the collection of data from interviews and questionnaires with IS auditors. As a result of the study, eighteen success factors were identified for the development of IS projects, including the adequate composition of the system development team, the degree of project manager's cooperation with the client organization, and the timing of decision making.

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Thermal instability of Co-silicides formed by Co and Co/Ti bilayer (Co 및 Co/Ti 이중막에 의해 형성된 Co-실리사이드의 열적 불안정성)

  • 장지근;엄우용;신철상;장호정
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.11
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    • pp.105-111
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    • 1996
  • We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.

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Fabriaction of bump bounded piezoresistive silicon accelerometer (범프 본딩된 압저항 실리콘 가속도센서의 제조)

  • 심준환;이상호;이종현
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.7
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    • pp.30-36
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    • 1997
  • Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

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THC Reduction through the Improvement of Exhaust System (배기계 형상 개선을 통한 THC 저감에 관한 연구)

  • 김기성;이용호
    • Journal of Advanced Marine Engineering and Technology
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    • v.24 no.5
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    • pp.111-118
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    • 2000
  • Experimental studies were performed to understand the flow characteristics in the exhaust system and improve the THC emission characteristics by optimizing the flow in the exhaust manifold and CCC in a SI engine. For this purpose, the flow characteristics in the exhaust systems with two types of exhaust manifolds(STD and New Type) were measured by using LDV technique under various engine condition. It was found that the flow characteristics in the New Type exhaust manifold was more desirable in a view point of heat loss reduction from the exhaust gases. The vehicle emission tests showed that the THC emission in the New Type exhaust manifold was decreased by 12%.

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Investigation of Charge Transfer between Graphene and Oxide Substrates

  • Min, Kyung-Ah;Hong, Suklyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.186.1-186.1
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    • 2014
  • Graphene, which is a 2-dimensional carbon material, has been attracting much interest due to its unique properties and potential applications. So far, many interesting experimental and theoretical works have been done concerning the electronic properties of graphene on various substrates. Especially, there are many experimental reports about doping in graphene which is caused by interaction between graphene and its supporting substrates. Here, we report the study of charge transfer between graphene and oxide substrates using density functional theory (DFT) calculations. In this study, we have investigated the charge transfer related with graphene considering various oxide substrates such as SiO2(0001) and MgO(111). Details in charge transfer between graphene and oxides are analyzed in terms of charge density difference, band structure and work function.

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Effects of AlN Ratio on Microstructure of AlN Films Grown by PAMBE (PAMBE를 이용하여 성장된 AlN 박막의 미세구조에 미치는 Al/N 비율 영향)

  • 홍성의;한기평;백문철;조경익;윤순길
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.972-978
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    • 2001
  • Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

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The influence of crystalline direction of substrate and depostion conditions on the orientation of diamond films (기판의 결정 방향 및 증착 변수가 다이아몬드 박막의 배향성에 미치는 영향)

  • Lee, Tae-Hoon;Seo, Soo-Hyung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1542-1545
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    • 2002
  • Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.

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A Case Report on HIVD-Cervical Spine Failed Back Surgery Syndrome Applied Chuna Treatment (추나 요법을 적용한 경추 추간판 탈출증 척추 수술 실패 증후군 환자의 경과관찰 1례)

  • Jeong, Si-Yeong;Lee, Jin-Bok
    • The Journal of Churna Manual Medicine for Spine and Nerves
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    • v.6 no.1
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    • pp.105-111
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    • 2011
  • Objects : This study was to report a clinical effect of Chuna Treatment for HIVD-cervical spine Failed Back Surgery Syndrome(FBSS) patient. Methods : In order to alleviate both arm tingling, numbness and neck stiffness, the patient was treated by acupuncture therapy, cervical traction technique of Chuna treatment and conservative managements. To evaluate the effect of the treatment, Recovery rate of Hirabayashi, Verbal Numerical Rating Scale(VNRS) and Neck Disability Index(NDI) score were used. Results : VNRS and NDI were improved and Recovery rate was 100%. Conclusions : Korean Treatment can be effectively used for a patient with HIVD-cervical spine FBSS patient. Further clinical studies are needed to verify the findings.

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Design and Fabrication of Six-Degree of Freedom Piezoresistive Turbulent Water Flow Sensor

  • Dao, Dzung Viet;Toriyama, Toshiyuki;Wells, John;Sugiyama, Susumu
    • Journal of Sensor Science and Technology
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    • v.11 no.4
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    • pp.191-199
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    • 2002
  • This paper presents the design concept, theoretical investigation, and fabrication of a six-degree of freedom (6-DOF) turbulent flow micro sensor utilizing the piezoresistive effect in silicon. Unlike other flow sensors, which typically measure just one component of wall shear stress, the proposed sensor can independently detect six components of force and moment on a test particle in a turbulent flow. By combining conventional and four-terminal piezoresistors in Si (111), and arranging them suitably on the sensing area, the total number of piezoresistors used in this sensing chip is only eighteen, much fewer than the forty eight piezoresistors of the prior art piezoresistive 6-DOF force sensor.