Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2002.07c
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- Pages.1542-1545
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- 2002
The influence of crystalline direction of substrate and depostion conditions on the orientation of diamond films
기판의 결정 방향 및 증착 변수가 다이아몬드 박막의 배향성에 미치는 영향
- Lee, Tae-Hoon (Dept. of Electrical Engineering, Hanyang University) ;
- Seo, Soo-Hyung (Center for Electronic Materials and Components, Hanyang University) ;
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Park, Jin-Seok
(Center for Electronic Materials and Components, Hanyang University)
- Published : 2002.07.10
Abstract
Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.
Keywords