• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 1999년도 추계 기술심포지움 논문집
• /
• pp.111-115
• /
• 1999

The $Li_2O-MgO-MgF_2-SiO_2$glasses with addition of $B_2O_3$ were investigated in order to make glass-ceramics for low temperature firing substrate. Glasses were made by melting at $1450^{\circ}C$ in the electronic furnace and crystallized at $750^{\circ}C$. After the crystallization, crystal phases and microstructure were observed. The crystal phases were polycrystalline of lithium boron fluorphlogopite and lithium fluorhectorite. The crystal shape was changed to grande type from needle type with the increase in $B_2O_3$ contents. Average particle size of the glass-ceramics aftar water swelling was $3.77{\mu}{\textrm}{m}$. The optimum sintering temperature and sintering shrinkage of the substrate were $900^{\circ}C$ and 13.4vol%, respectively.

• Asia pacific journal of information systems
• /
• 제9권3호
• /
• pp.111-126
• /
• 1999

Current audit reports on IS development projects provide useful information to stakeholders but have such limitations as the lack of quantification of audit results and the insufficient recommendations on success factors. The purpose of this study is to solve these limitations, leading audit reports to become of future-oriented contents and form. This research was conducted through the logical inference from the review on the related literature, the analysis of audit reports from 1996 to 1998, and the collection of data from interviews and questionnaires with IS auditors. As a result of the study, eighteen success factors were identified for the development of IS projects, including the adequate composition of the system development team, the degree of project manager's cooperation with the client organization, and the timing of decision making.

• 전자공학회논문지A
• /
• 제33A권11호
• /
• pp.105-111
• /
• 1996

We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.

• 전자공학회논문지D
• /
• 제34D권7호
• /
• pp.30-36
• /
• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• Journal of Advanced Marine Engineering and Technology
• /
• 제24권5호
• /
• pp.111-118
• /
• 2000

Experimental studies were performed to understand the flow characteristics in the exhaust system and improve the THC emission characteristics by optimizing the flow in the exhaust manifold and CCC in a SI engine. For this purpose, the flow characteristics in the exhaust systems with two types of exhaust manifolds(STD and New Type) were measured by using LDV technique under various engine condition. It was found that the flow characteristics in the New Type exhaust manifold was more desirable in a view point of heat loss reduction from the exhaust gases. The vehicle emission tests showed that the THC emission in the New Type exhaust manifold was decreased by 12%.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.186.1-186.1
• /
• 2014

Graphene, which is a 2-dimensional carbon material, has been attracting much interest due to its unique properties and potential applications. So far, many interesting experimental and theoretical works have been done concerning the electronic properties of graphene on various substrates. Especially, there are many experimental reports about doping in graphene which is caused by interaction between graphene and its supporting substrates. Here, we report the study of charge transfer between graphene and oxide substrates using density functional theory (DFT) calculations. In this study, we have investigated the charge transfer related with graphene considering various oxide substrates such as SiO2(0001) and MgO(111). Details in charge transfer between graphene and oxides are analyzed in terms of charge density difference, band structure and work function.

• 한국전기전자재료학회논문지
• /
• 제14권12호
• /
• pp.972-978
• /
• 2001

Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.1542-1545
• /
• 2002

Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.

• 척추신경추나의학회지
• /
• 제6권1호
• /
• pp.105-111
• /
• 2011

Objects : This study was to report a clinical effect of Chuna Treatment for HIVD-cervical spine Failed Back Surgery Syndrome(FBSS) patient. Methods : In order to alleviate both arm tingling, numbness and neck stiffness, the patient was treated by acupuncture therapy, cervical traction technique of Chuna treatment and conservative managements. To evaluate the effect of the treatment, Recovery rate of Hirabayashi, Verbal Numerical Rating Scale(VNRS) and Neck Disability Index(NDI) score were used. Results : VNRS and NDI were improved and Recovery rate was 100%. Conclusions : Korean Treatment can be effectively used for a patient with HIVD-cervical spine FBSS patient. Further clinical studies are needed to verify the findings.

• 센서학회지
• /
• 제11권4호
• /
• pp.191-199
• /
• 2002

This paper presents the design concept, theoretical investigation, and fabrication of a six-degree of freedom (6-DOF) turbulent flow micro sensor utilizing the piezoresistive effect in silicon. Unlike other flow sensors, which typically measure just one component of wall shear stress, the proposed sensor can independently detect six components of force and moment on a test particle in a turbulent flow. By combining conventional and four-terminal piezoresistors in Si (111), and arranging them suitably on the sensing area, the total number of piezoresistors used in this sensing chip is only eighteen, much fewer than the forty eight piezoresistors of the prior art piezoresistive 6-DOF force sensor.