• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.75-79
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• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.100-102
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• 2013

Magnetron-sputtering법을 사용하여 기존에 연구하였던 CrAlN (Cr 7：Al 3)박막에 Si를 첨가하여 Si의 함량 변화에 따라 미세구조와 화학적 결합상태, 온도저항계수(TCR) 및 산화저항의 영향과 기계적특성 개선을 통한 multi-functional heater resistor layer로써의 가능성을 연구하였다. CrAlSiN 박막의 Si 함량에 변화에 따라 온도저항계수 변화를 확인하였으며 X-선 회절 분석(XRD) 패턴 분석결과 CrAlSiN 박막의 결정구조가 Bl-NaCl 구조를 가지고 있는 것을 확인하였으며 SEM과 AFM을 통한 표면 및 미세구조 분석결과 Si의 함량이 증가할수록 입자가 조밀해짐을 알 수 있었다. 최근 digital priting technology의 핵심 기술로 부각되고 있는 inkjet priting technology는 널리 태양전지뿐만 아니라 thin film process, lithography와 같은 반도체 공정 기술에 활용 할 수 있기 때문에 반도체 제조장비에도 사용되고 있으며, 현재 thermal inkjet 방식을 사용하고 있다. Inkjet printing technology는 전기 에너지를 잉크를 배출하기 위해 열에너지로 변환하는 thermal inkjet 방식을 사용하고 있는데, 이러한 thermal inkjet 방식은 기본적으로 전기저항이 필요하지만 electrical resistor layer는 잉크를 높은 온도에서 순간적으로 가열하기 때문에 부식이나 산화 등의 문제가 발생할 수 있어 이에 대한 보호층을 필요로 한다. 하지만, 고해상도, 고속 잉크젯 프린터, 대형 인쇄 등을 요구되고 있어 저 전력 중심의 잉크젯 프린터의 열효율을 방해하는 보호층 제거에 필요성이 제기되고 있다. 본 연구는 magnetron-sputtering을 사용하여 기존의 CrAlN 박막에 Si를 합성하여 anti-oxidation, corrosion resistance 그리고 low temperature coefficient of resistance 값을 갖는 multi-functional heater resistor layer로써 CrAlSiN 박막의 Si 함량에 따른 효과에 초점을 두었다. 본 실험은 CrAlN 박막에 Si 함량을 4~11 at%까지 첨가시켜 함량의 변화에 따른 특성변화를 확인하였다. 함량이 증가할수록 amorphous silicon nitride phase의 영향으로 박막의 roughness는 감소하였으며 XRD 분석결과 (111) peak의 Intensity가 감소함을 확인하였으며 SEM 관찰시 모든 박막이 columnar structure를 나타내었으며 Si함량이 증가할수록 입자가 치밀해짐을 보여주었다.Si함량이 증가할수록 CrAlN 박막에 비하여 면저항은 증가하였으며 TCR 측정결과 Si함량이 6.5 at%일 때 가장 안정한 TCR값을 나타내었다. Multi-functional heater resistor layer 역할을 하기 위해서, CrAlSiN 박막의 원소 분포, 표면 거칠기, 미세조직, 전기적 특성 등을 조사하였다. CrAlN 박막의 Si의 첨가는 크게 XRD 분석결과 주상 성장을 억제 할 수 있으며 SEM 분석을 통하여 Si 함량이 증가할수록 Si3N4 형성이 감소하며 입자크기가 작아짐을 확인하였다. 면저항의 경우 Si 함량이 증가함에 따라 높은 면저항을 나타내었으며 Si함량이 6.5 at%일 때 가장 낮은 TCR 값인 3120.53 ppm/K값을 보였다. 이 값은 상용되고 있는 heater resistor보다 높지만, CrAlSiN 박막이 더 우수한 기계적 특성을 가지고 있기 때문에 hybrid heater resistor로 적용할 수 있을 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.111-111
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• 2002

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.479-484
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• 2010

Microstructural and mechanical properties of the TiN films deposited on Si substrates under various substrate bias voltages by a reactive magnetron sputtering have been studied. It was found that the crystallographic texture, microstructural morphology and mechanical property of the TiN films were strongly depended on the substrate bias voltage. TiN films deposited without bias exhibited a mixed (200)-(111) texture with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. It is also observed that the crystallite size decreases with increasing bias voltage, which corresponds to the increasing diffraction peak width of XRD patterns. The average surface roughness was calculated from AFM images of the films; these results indicated that the average surface roughness was increased with an increase in the bias voltage of the coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.97-101
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• 1995

We report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either(111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from(002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• The Journal of Natural Sciences
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• v.8 no.2
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• pp.111-118
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• 1996

In order to improve the chemical durability of glass in the $Na_2O$-CaO-$SiO_2$ system, it was investigated in the effect of $B_2O_3$ and ZnO addition and changing amount of each composition, $Na_2O$, $Al_2O_3$, $Li_2O$. In this minimize the change of softening point of glass was as follow.(wt%)$B_2O_3$:3.36%, ZnO:2.88%, $Na_2O$:9.93%, $Al_2O_3$, $Li_2O$:0.19%, $SiO_2$:70.56%, CaO:11.22%, $K_2O$:0.14%

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.33-38
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• 2002

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).