• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• 한국토양비료학회지
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• 제44권6호
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• pp.1112-1117
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• 2011

재배기간이 긴 잎들깨 시설 촉성재배 조건에서 질소시비 수준별 시험을 통하여 토양의 질산태질소 함량에 따른 질소 웃거름시비량 결정기준을 설정하였다. 잎들깨 주산단지인 금산과 밀양 두 지역에서 각각 1개의 시설하우스에서 질소시비량 5수준과 관행구를 난괴법 3반복과 4반복으로 각각 실시하였다. 생육시기별로 매달 건물중과 질소흡수량, 마디생장량을 조사하였고, 토양질산태질소를 분석하였다. 금산포장의 마디당 질소 요구량은 $2.2kg\;10a^{-1}$, 밀양포장은 $3.5kg\;10a^{-1}$로 조사되었다. 토양질산태질소의 하한기준은 금산포장과 밀양포장 모두 $NO_3$-N $10mg\;kg^{-1}$로 설정하였다. 상한기준 설정은 토심 15 cm, 용적밀도 $1.2Mg\;m^{-3}$, 토양 중 질산태질소의 이용율 70%를 적용하여 잎들깨 1마디에 필요한 질소요구량을 충족하는 수준으로 결정하여 금산포장과 밀양포장 각각 $30mg\;kg^{-1}$과 $40mg\;kg^{-1}$로 설정하였다. 따라서 금산지역은 Y=-0.157X + 4.71에 의해, 밀양지역은 식 Y=-0.1667X + 6.6667에 의해 잎들깨 1마디 생육에 필요한 질소 웃거름 시비량을 결정할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• 대한기계학회논문집A
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• 제21권10호
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• pp.1541-1550
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• 1997

Since the ceramic/metal joint material is made at a high temperature, the residual stress develops when it is cooled from bonding temperature to room temperature due to remarkable difference of thermal expansion coefficient between ceramic and metal. As residual stress at ceramic/metal joints influences the strength of joints, it is important to estimate residual stress quantitatively. In this study, it is attempted to estimate joint residual stress of Si$_3$N$_4$STS304 joints quantitatively and to compare the strength of joints. The difference of residual stress is measured when repeated thermal cycl is loaded, under the conditions of the practical use of the ceramic/metal joint. The residual stress increases at 1 cycle of thermal load but decreases in 3 cycles to 10 cycles of thermal load. And 4-point bending test is performed to examine the influence of residual stress on fracture strength. As a result, it is known that the stress of joint decreases as the number of thermal cycle increases.

• 한국재료학회지
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• 제26권1호
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• pp.54-60
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• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• 대한기계학회논문집A
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• 제34권3호
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• pp.341-346
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• 2010

이종 접합재($\beta-Si_3N_4/S45C$)의 굽힘강도와 인장강도에 미치는 시험편 형상의 영향을 정량적으로 평가하였다. 평균 굽힘강도와 평균 인장강도는 원형단면 시험편이 4각형 단면 시험편보다 약간 높았다. 또한, 초음파(AE)를 이용하여 균열발생응력을 성공적으로 측정할 수 있었으며, 균열발생응력은 굽힘강도의 60~80% 이었다. 아울러, 세라믹측 접합계면 근처의 잔류응력 측정을 굽힘강도 시험전에 X선 회절법에 의해 실시하였으며, 굽힘강도와 균열발생응력은 잔류응력 증가와 더불어 감소하였다. 마지막으로 인장시험에서 굽힘변형률 성분의 영향을 평가하였으며, 인장강도는 굽힘변형률 성분의 증가와 더불어 감소하고 굽힘강도의 약 80%에 해당되었다.

• Journal of Magnetics
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• 제10권3호
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.59-59
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• 2009

The efficiency of CMOS technology has been developed in uniform rate. However, there was a limitation of reducing the thickness of Gate-oxide since the thickness of Gate Dielectric is also reduced so an amount of leakage current is grow. In order to solve this problem, the semiconductor device which has a dual gate is used widely. This paper presents a method and a necessity for making the Gate Stack of TFT. Before Using test devices to measure values, stacking $SiN_x$ on a wafer test was conducted.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.5-6
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• 2009

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

• 한국세라믹학회지
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• 제29권7호
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• pp.551-557
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• 1992

X-ray diffraction patterns, IR spectra and zeta-potentials of silicon nitride and $\beta$-Sialon powders were investigated before and after surface manipulations. $\beta$-Sialon powder was produced from Hadong Kaolin by the carbothermic reduction and simulataneous nitridation. Isoelectric points of as-prepared Si3N4 and $\beta$-Sialon powders were 8.4 and 7.4, respectively. After both silicon nitride and $\beta$-Sialon powders were oxidized at 80$0^{\circ}C$ for 24 h in air, the isoelectric points of these powders corresponded to that of silica (pH=3). I case of the addition of Darvan C as deflocculant, its isoelectric point was 3 and zeta-potential was nearly constant in the range of pH 5~12. When SN 7347 was used as deflocculant, its isoelectric point was 8.3 and zeta-potential over -156 mV was measured above pH 11.