• Title/Summary/Keyword: Si$_x$$N_y$

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Domestic Intercomparison Study for the Performance of Personnel Dosimeters (개인선량계 성능의 국내 상호비교)

  • Kim, Jang-Lyul;Chang, Si-Young;Kim, Bong-Hwan
    • Journal of Radiation Protection and Research
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    • v.21 no.3
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    • pp.147-153
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    • 1996
  • The Korea Atomic Energy Research Institute(KAERI) conducted a intercomparison study for personnel dosimetry services in Korea to enhance the accuracy and precision of the dosimetry system. Nine types of dosimeters(6 TLD, 3 film badge) from 7 institutions took part in this intercomparison study. Each participant submitted 30 dosimeters including transit control for irradiations. Both TLDs and film badges were irradiated with Cs-137 gamma, Sr/Y-90 beta and 4 X-ray beams in ISO wide series. Four dosimeters were irradiated on phantom with same dose equivalent for each field category. The delivered dose equivalent was in the range of $0.1{\sim}10mSv$. The participants assessed the results of their dosimeter readings in terms of the ICRU operational quantities for personal monitoring, Hp(10) and Hp(0.07). Most participants except 1 dosimeter estimated the delivered dose equivalent with biases less than ${\pm}25%$ for Cs-137 and Sr/Y-90. But for X-rays, the biases exceeded ${\pm}35%$ in some cases bacause the dose evaluation algorithm was based on the ANSI N13.11 X-ray fields which are different from those given by ISO.

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An evaluation on crystallization speed of N doped $Ge_2Sb_2Te_5$ thin films by nano-pulse illumination (나노-펄스 노출에 따른 질소 첨가한 $Ge_2Sb_2Te_5$ 박막의 결정화 속도 평가)

  • Song, Ki-Ho;Beak, Seung-Cheol;Park, Heung-Su;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.134-134
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    • 2009
  • In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

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Characterization of crack self-healing of silicon carbide by hot press sintering (열간가압소결법으로 제조한 탄화규소의 균열자기치유 특성)

  • Kim, Seong-Hoon;Kim, Kyung-Hun;Dow, Hwan-Soo;Park, Joo-Seok;Kim, Kyung-Ja;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.2
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    • pp.62-66
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    • 2016
  • In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with $Al_2O_3$ and $Y_2O_3$ sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under $1950^{\circ}C$ and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of $3{\times}4{\times}40mm$, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at $1200{\sim}1400^{\circ}C$ for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at $1300^{\circ}C$ for 5 hr.

Thermal Transfer Pixel Patterning by Using an Infrared Lamp Source for Organic LED Display (유기 발광 소자 디스플레이를 위한 적외선 램프 소스를 활용한 열 전사 픽셀 패터닝)

  • Bae, Hyeong Woo;Jang, Youngchan;An, Myungchan;Park, Gyeongtae;Lee, Donggu
    • Journal of Sensor Science and Technology
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    • v.29 no.1
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    • pp.27-32
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    • 2020
  • This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO2), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiNx) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

A SHEAR BOND STRENGTH OF RESIN CEMENTS BONDED TO PRESSABLE PORCELAIN WITH VARIOUS SURFACE TREATMENTS

  • Lee Jong-Yeop;Im Eui-Bin
    • The Journal of Korean Academy of Prosthodontics
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    • v.41 no.3
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    • pp.379-386
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    • 2003
  • Statement of problem. Resin cements are widely used in adhesive dentistry specially on all ceramic restorations. It is needed to find out adequate bonding strength between different porcelain surface treatments, commercially available porcelains, and different resin cement systems. Purpose. The purpose of this study was to evaluate shear bond strength of resin cements bonded to porcelains in three different modalities; 5 different porcelain surface treatments, 3 different resin cement systems and 3 different commercially available pressable porcelains. Material and Method. This study consisted of 3 parts. Part I examined the effect of five different surface treatments on the pressable porcelain. Fifty discs (5 mm in diameter and 3 mm in height) of Authentic porcelain were randomly divided into 5 groups (n = 10). The specimens were sanded with 320 grit SiC paper followed by 600 grit SiC paper. The specimens were treated as follow: Group 1-Sandblasting (aluminum oxide) only, Group 2 - sandblasting/ silane, Group 3 - sandblasting/ acid etching/ silane, Group 4 - acid etching only, Group 5 - acid etching/ silane. Part II examined the shear bond strength of 3 different resin cement systems (Duolink, Variolink II, Rely X ARC) on acid etching/ silane treated Authentic pressable porcelain. Part 3 examined the shear bond strength of Duolink resin cement on 3 different pressable porcelains (Authentic, Empress I, Finesse). All cemented specimens were stored in distilled water for 2 hours and tested with Ultradent shear bond strength test jig under Universal Instron machine until fracture. An analysis of variance(ANOVA) test was used to evaluate differences in shear bond strength. Result. The shear bond strength test resulted in the following: (1) Acid etched porcelains recorded greater shear bond strength values to the sandblasted porcelains. (2) Silane treated porcelains recorded greater shear bond strength values to non-silane treated porcelains. (3) There was no significant difference between sandblasting/ acid etching/ silane treated and acid etching/ silane treated porcelains. However those values were much higher than other three groups. (4) The shear bond strength with Variolink II was lower than the value of Duolink or Rely X ARC. (5) The shear bond strength of Finesse was lower than the value of Authentic or Empress I.

Fabrication and Physicochemical Properties of Carbon/Titania/Bentonite Monolith for Architecture

  • Oh, Won-Chun;Choi, Jong-Geun;Song, Da-Ye;Kim, Ha-Rry;Chen, Ming-Liang;Zhang, Feng-Jun;Park, Tong-So
    • Korean Journal of Materials Research
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    • v.20 no.3
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    • pp.167-173
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    • 2010
  • In this study, we used activated carbon (AC) and titanium oxysulfate as a titanium precursor to prepare carbon/titania composites. We then mixed it with bentonite in different ratios to make a carbon/titania/bentonite monolith for use in architecture bricks by using Phenolic rosin (PR) as a bonding agent. The physicochemical properties of the prepared composites were analyzed by BET surface area, scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), self-cleaning effect and bactericidal tests. The BET surface areas increased as the ratio of carbon/titania composites increased. The SEM microscopy showed that the $TiO_2$ and bentonite were coated on the surface of the AC. The XRD patterns showed a mixture structure of anatase and rutile of $TiO_2$ with a clear $SiO_2$ structure. The EDX spectra of the carbon/titania/bentonite monolith confirmed the presence of various elements, namely C, O, Ti and Si, as well as other, impure elements. Moreover, to determine the self-cleaning effect of the carbon/titania/bentonite monolith, we used methylene blue (MB, $C_{16}H_{18}N_3S{\cdot}Cl{\cdot}3H_2O$) in an aqueous solution under the irradiation of visible light. Accordingly, all of the samples had excellent degradation of the MB solution. Furthermore, it was observed that the composites with sunlight irradiation had a greater effect on E. coli than any other experimental conditions.

Preparation of Silicon-Carbon Composite via Magnesiothermic Reduction Method and Its Application to the Anode Material for Lithium Ion Battery (마그네슘열환원법을 이용한 실리콘-탄소 복합재 제조 및 리튬이차전지 음극재로의 이용)

  • Kim, Eudem;Kwon, Soon Hyung;Kim, Myung-Soo;Jung, Ji Chul
    • Korean Journal of Materials Research
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    • v.24 no.5
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    • pp.243-248
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    • 2014
  • Silicon-carbon composite was prepared by the magnesiothermic reduction of mesoporous silica and subsequent impregnation with a carbon precursor. This was applied for use as an anode material for high-performance lithium-ion batteries. Well-ordered mesoporous silica(SBA-15) was employed as a starting material for the mesoporous silicon, and sucrose was used as a carbon source. It was found that complete removal of by-products ($Mg_2Si$ and $Mg_2SiO_4$) formed by side reactions of silica and magnesium during the magnesiothermic reduction, was a crucial factor for successful formation of mesoporous silicon. Successful formation of the silicon-carbon composite was well confirmed by appropriate characterization tools (e.g., $N_2$ adsorption-desorption, small-angle X-ray scattering, X-ray diffraction, and thermogravimetric analyses). A lithium-ion battery was fabricated using the prepared silicon-carbon composite as the anode, and lithium foil as the counter-electrode. Electrochemical analysis revealed that the silicon-carbon composite showed better cycling stability than graphite, when used as the anode in the lithium-ion battery. This improvement could be due to the fact that carbon efficiently suppressed the change in volume of the silicon material caused by the charge-discharge cycle. This indicates that silicon-carbon composite, prepared via the magnesiothermic reduction and impregnation methods, could be an efficient anode material for lithium ion batteries.

A Study on Dancheong Pigments of Old Wooden Building in Gwangju and Jeonnam, Korea (광주.전남지역 목조 고건축물에 사용된 단청안료에 대한 연구)

  • Jang, Seong-Wook;Park, Young-Seog;Park, Dae-Woo;Kim, Jong-Kyun
    • Economic and Environmental Geology
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    • v.43 no.3
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    • pp.269-278
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    • 2010
  • We investigated characteristics of the coloring material of Dancheong pigments and hope that this study contributes the revival of traditional Dancheong pigments color. For this purpose, we collected Dancheong fragment samples that fell off naturally from old wooden buildings in Gwangju and Jeonnam and analyzed the natural coloring material by XRD and EDS-SEM analysis method. In white pigments of Dancheong fragments, it is confirmed that gypsum$(CaSO_{4}{\cdot}2H_{2}O)$, quartz$(SiO_{2})$, white lead$(PbCO_{3})$ and calcite$(CaCO_{3})$ which have been used for white pigments since ancient times and $TiO_{2}$ which is common used in modern times. In red pigments of Dancheong fragments, it is confirmed that hematite$(Fe_{2}O_{3})$ and red lead$(Pb_{3}O_{4})$, which have been used for red pigments since ancient times and C.I. pigment orange $13(C_{32}H_{24}C_{12}N_{8}O_{2})$ but there is no cinnabar(HgS) which has been used since B.C. 3000 in China. In yellow pigments of Dancheong fragments, it is confirmed that crocoite$(PbCrO_{4})$ and massicot(PbO). In blue pigments of Dancheong fragments, it is confirmed that sodalite$(Na_{4}BeAlSi_{4}O_{12}Cl)$ and nosean $(Na_{8}Al_{6}Si_{6}O_{24}SO_{4})$ as coloring material of blue pigment and C.I. pigments blue $29(Na_{7}Al_{6}Si_{6}O_{24}S_{3})$ which is used in modern times. In green pigments of Dancheong fragments, it is confirmed that calumetite$(Cu(OHCI)_{2}{\cdot}2H_{2}O)$, escolaite(Cr2O3), dichromium trioxide$(Cr_{2}O_{3})$, emerald green$(C_{2}H_{3}As_{3}Cu_{2}O_{8})$, and C.I. pigments green$(C_{32}H_{16}-XCl_{x}Cu_{8})$ which is used in modern time. In black pigments of Dancheong fragments, Chiness ink(carbon black) is confirmed.

The Electrical Properties of Mutilayer Chip Capacitor with X7R by Addition of Rare-Earth Ions (Y2O3, Er2O3) using Design of Experiments (실험계획법을 적용한 X7R 적층 칩 커패시터의 희토류(Y2O3, Er2O3) 첨가에 따른 전기적 특성)

  • Yoon, Jung-Rag;Moon, Hwan;Lee, Heun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.216-221
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    • 2010
  • Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

Electrical and Physical Characteristics of Nickel Silicide using Rare-Earth Metals (희토류 금속을 이용한 니켈 실리사이드의 전기 및 물리적 특성)

  • Lee, Won-Jae;Kim, Do-Woo;Kim, Yong-Jin;Jung, Soon-Yen;Wang, Jin-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.29-34
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    • 2008
  • In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.