• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1155-1159
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• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.1
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• pp.101-112
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• 1994

The measurement of residual stress distribution of $Si_3N_4/SUS304$ joint was performed on 23 specimens with the same joint condition using PSPC type X-ray stress measurement system and the two-dimensional elastoplastic analysis using finite element method was also attempted. As results, residual stress distribution near the interface on the ceramic side of the joint was revealed quantitatively. Residual stress on the ceramic side of the joint was turned out to be tensional near the interface, maximum along the edge, varying in accordance with the condition of the joint and variance to be most conspicuous for the residual stress normal to the interface characterized by the stress singularities. In the vicinity of the interface, the high stress concentration occurs and residual stress distributes three-dimensionally. Therefore, the measured stress distribution differed remarkably from the result of the two-dimensional finite-element analysis. Especially at the center of the specimen near the interface, the residual stress, $\sigma_{x}$ obtained from the finite element analysis was compressive, whereas measurement using X-ray yielded tensile $\sigma_{x}$. Here we discuss two dimensional superposition model the discrepancy between the results from the two dimensional finite element analysis and X-ray measurement.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.785-790
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• 1993

Sialon ceramics are presently seen as promising materials with high hardness, strength, fracture toughness and corrosion resistance for friction and wear applications. The objective of present work is to improve of mechanical properties and wear resistance of $\alpha$-Sialon(x=0.4) by addition of SiC whisker. $\alpha$-sialon(x=0.4)/SiC whisker composites were obtained by hot-isostatic pressing at 173$0^{\circ}C$ for 1 hour under 1757Kg/$\textrm{cm}^2$ N2 pressure after pressureless sintering the mixture of Si3N4, Y2O3, AlN at 1780~180$0^{\circ}C$ for 3~5 hours in N2 atmosphere. As the amount of SiC whisker content increased, relative density and hardness were decreased, however fracture toughness, bending strength and tribological properties were improved. Tribological properties of $\alpha$-Sialon/15 vol% SiC whisker composite were improved in spite of its low mechanical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.154-154
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• 2010

표면 passivation 효과향상 기술은 고효율의 결정질 실리콘 태양 전지를 제작하는데 필수적 요소이다. passivation을 통해서 전자와 전공의 재결합 속도를 낮출 수 있어 $V_{oc}$가 상승하고, 전류 값 증가를 통하여 효율 향상의 결과를 얻을 수 있기 때문이다. passivation을 위해서 다양한 각도로 접근하였다. 첫째는 $SiN_x$를 이용한 passivation효과 실험 둘째는 plasma 분위기에서 $N_2O$를 이용한 passivation효과 실험 그리고 마지막으로 RTO를 이용한 passivation 효과를 실험하였다. 첫 번째 실험은 PECVD를 이용하여 $SiN_x$를 증착한 후 굴절률 1.9 2.66으로 가변 한 결과 $SiN_x$ n=2.66에서 $D_{it}=8.82{\times}10^9$ [$cm^{-2}eV^{-1}$]로 우수한 passivation 효과를 얻을 수 있었다. 두 번째 실험에서는 PECVD를 이용해서 $N_2O$ treatment 후 SiON 증착한 샘플을 이용하여 시간 가변에 따른 passivation 효과를 확인하였다. 그 결과 $N_2O$ 50sccm, 100mTorr, 20W, $400^{\circ}C$ 8min 조건에서 가장 우수한 passivation 효과를 관찰할 수 있었다. 마지막 실험은 RTP를 이용하여 $SiO_2$ 박막에 대한 온도, 시간에 따른 passivation효과를 확인하였다. 그 결과 $O_2$ 3L/min $800^{\circ}C$ 2~3nm 3min 공정에서 lifetime이 220us(n형)의 결과를 얻을 수 있었다. 상기 세 실험결과를 태양전지제작에 응용한다면 고효율의 태양전지 제작이 가능할 것으로 사료된다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.391-394
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• 2004

In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.138-138
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• 2010

플렉서블 디스플레이에 사용되고 있는 기판은 광학적 투과율이 우수하고 휘어지는 폴리머 기판이 많이 활용되고 있으나 대기중의 수분 및 산소와 같은 가스성분들이 기판을 통해 침투하여 디스플레이의 수명을 감소시킨다. 이러한 문제점을 해결하기 위해 투명하면서 절연특성이 뛰어나고 수분투과 방지 특성이 뛰어난 실리콘 화합물을 기반으로 하는 가스차단막의 연구가 활발히 진행되고 있다. 본 실험에서는 기존의 스퍼터링 장치에 비해 저온공정이면서 구조적으로 뛰어난 박막특성을 얻을 수 있는 대향타겟식 스퍼터링(Facing Targets System, FTS)법을 이용하여 PEN기판 위에 $SiO_x$, $SiO_xN_y$, $(SiO_2)_x(ZnO)_{100-x}$ (SZO)를 단일층또는 다층으로 증착한 박막들의 광학적, 구조적 및 수분 투과 방지 특성들을 알아보았다. $SiO_x$, $SiO_xN_y$, SZO박막들의 광학적 특성을 알아보기 위해 Shimadzu사의 UV-VIS spectrophotometer 장비를 사용하여 측정한 결과 가시광 영역에서 80%이상의 높은 광투과율을 나타내었다. 박막의 수분투과 방지 특성으로 Mocon사의 Permatran W3/31 system을 이용한 투습율을 측정결과 가스 차단막이 없는 Bare PEN에 비해 PEN기판 위에 $SiO_x$와 $SiO_xN_y$ 박막들을 단층 또는 다층으로 증착한 박막의 투습율이 감소한 것을 확인 할 수 있었다. 특히 SZO 박막의 경우 다른 가스차단막들과 비교해 가장 낮은 수분투과율을 나타내었다. 이는 향후 SZO를 기반으로 한 단층박막이나 무기/무기 또는 유기/무기의 다층 박막 형태를 가지는 가스차단막이 플렉서블 디스플레이에 적용 가능할 것이라 사료된다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.190-196
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• 1998

Amorphous ternary $Si_xC_yN-z$ thin films were obtained by plasma enhanced chemical vapor deposition(PECVD) using $N_2, SiH_4 \;and \;C_2H_4$ as the reaction sources. The chemical state were characterized by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy(FTIR). The optical properties of the thin films were investigated by UV-visible spectrophotometer and ellipsometer, and the optical band gaps of thin films were determined from corresponding transmittance spectra following Tauc equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.179-179
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• 2013

현재 자동차 분야에서 차량 경량화를 통해 연비 향상 및 에너지 효율 향상을 기대하고 있으며, 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 PC (Polycarbonate)로 대체하고자 하는 연구가 활발히 이루어지고 있다. 그러나, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 중요한 문제점으로 지적되고 있다. 본 연구에서는, PC의 내마모 특성을 향상시키기 위하여 transmittance가 확보되고, 고경도 특성을 갖는 Al-Si-N 박막 증착에 대한 연구를 하였다. Al-Si-N 박막 증착을 위하여 ICP-assisted reactive magnetron sputtering 장비를 이용하였으며, 고경도 특성을 갖는 Al-Si-N 박막을 제조하였다. 분석 장비로는 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS (X-ray Photoelectron Spectroscopy), AES (Auger electron spectrscopy)와 XRD (X-ray diffraction)를 이용하여 분석을 수행하였으며, Knoop ${\mu}$-hardness tester와 Pin-on-disk를 이용하여 경도 및 내마모 특성을 평가하였다. Al-Si-N 박막의 두께는 ~5,000 ${\AA}$을 증착하였으며, 가시광 영역에서 평균 92%의 transmittance를 나타내었다. 박막의 Si/(Al+Si) 비율에 따라 다른 경도 특성을 나타냈는데, Si/(Al+Si) 비율이 26~32% 부근에서 최대 31 GPa의 경도 값을 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.