Optical properties of amorphous $Si_xC_yN_z$ ternary thin films prepared by plasma enhanced chemical vapor deposition

  • Zhang, Z.H. (Department of Physics, Wuhan University) ;
  • Fan, X.J. (Department of Physics, Wuhan University) ;
  • Guo, H.X. (Department of Physics, Wuhan University) ;
  • Zhang, W. (Department of Physics, Wuhan University) ;
  • Zhang, C.Y. (Department of Physics, Wuhan University) ;
  • Luo, F.Y. (Department of Physics, Wuhan University)
  • Published : 1998.07.01

Abstract

Amorphous ternary $Si_xC_yN-z$ thin films were obtained by plasma enhanced chemical vapor deposition(PECVD) using $N_2, SiH_4 \;and \;C_2H_4$ as the reaction sources. The chemical state were characterized by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy(FTIR). The optical properties of the thin films were investigated by UV-visible spectrophotometer and ellipsometer, and the optical band gaps of thin films were determined from corresponding transmittance spectra following Tauc equation.

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