• Title/Summary/Keyword: Si$_x$$N_y$

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Pinhole Bone Scintigraphic Manifestation of Fibrous Dysplasia (섬유성 이형성증의 바늘구멍 골스캔 소견)

  • Baek, Jee-Hee;Lee, Sung-Yong;Kim, Sung-Hoon;Chung, Yong-An;Kim, Bum-Soo;Song, Ha-Hun;Chung, Soo-Kyo;Kang, Si-Won;Bahk, Yong-Whee;Shinn, Kyung-Sub
    • The Korean Journal of Nuclear Medicine
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    • v.31 no.4
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    • pp.452-458
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    • 1997
  • To evaluate the pinhole scintigraphic findings and its significance, authors retrospectively compared the pinhole bone scintigrams and corresponding radiograms of 16 lesions in 14 patients with fibrous dysplasia. They were diagnosed pathologically in 10 lesions and radiologically in 6 lesions. The mean age of patients was 41.1 years. The mean interval between two studies was 1.1 days. Locations were ribs 7, pelvic bone 4, clavicle 1, long bones 4(femur 2, tibia 1, humerus 1). The radiographic findings were as follows : the central portions were radiolucent(n=9), ground-glass opacities(n=5) or sclerotic(n=2) and the peripheral appearance were sclerotic rim(n=5), septation(n=7), cortical perforation (n=10) and invisible cortical thinning(n=9). Pinhole scintigraphic findings were as follows; Central portions showed normal 1+ uptake in 6 cases(radiolucent 5, ground-glass opacity 1), slightly increased 2+ upta- ke in 7 cases(radiolucent 4, ground-glass opacity 3), and marked 3+ uptake in 3 cases(ground-glass opacity 1, sclerotic 2). The 15 of 16 lesions showed more intense uptake in the peripheral portion: slightly increased 2+ uptake corresponding to the sclerotic rim(5/5) and unvisible cortical thinning(1/9), and irregular foci of marked 3 + uptake corresponding to septation(7/7), cortical perforation(10/10) and invisible cortical thinning (8/9). One of 16 lesions showed homogeneous 2+ uptake. In conclusion, pinhole scintigram provides information on regional activity of the fibrous dysplasia, which would be helpful in diagnosis, prediction of prognosis and determination of treatment plan.

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STRESS DISTRIBUTION IN ESTHETIC ORTHODONTIC BRACKETS : AN ANALYSIS USING THE FINITE ELEMENT METHOD (유한요소 분석을 통한 심미적 교정 브라켓의 응력 및 구조분석에 관한 연구)

  • Lee, Won-You;An, Ju-Sam;Park, Young-Cheol;Park, Myeong-Kyun;Sohn, Hong-Bum;Jeong, Si-Dong
    • The korean journal of orthodontics
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    • v.28 no.1 s.66
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    • pp.43-49
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    • 1998
  • The aim of this study were to measure and compare the stress level on three type brackets and each other material (stainless steel, ceramic) with tipping and torquing forces by using the finite element analysis and to design biomechanically favorable brackets. For this study, three kinds of brackets were selected(A:Transcend-RMO, B:Signature-Unitek, C:PAW: plain archwire appliance-applied for a patent in Yonsei Udiversity). The slot size of bracket was 0.022inch and the size of archwire was 0.0175x0.025inch and taper shaped archwire was used in PAW. Loading force in tipping was 4.27N and torquing force was 32.858N applied by archwire torsion with 19.7degree and 11.3 degree in C type bracket. The conclusions were that (1) The finite element method proved to be a useful tool in the stress analysis of orthodontic bracket subjected to various forces. (2) With tipping, the stresses were concentrated at the gingival wall of the wire slot where it meets the mesial bracket surface and the incisal wall of the wire slot where it meets the distal bracket surface and with torquing, the stresses were concentrated at the junction of the gingival or incisal wall and base of the slot. (3) The maximum stress value was higher in torquing force than tipping force and therefore it is desirable to design on the basis of torquing force. (4) It was considered that the change in material might be affect on the diminish of stress value in the place of stess concentration. (5) The maximum stress value was highest on PAW bracket when the tipping and torquing force was applied and therefore it would be desirable to use mechanically favorable material on PAW bracket.

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Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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A Retrospective Analysis of Treatment-Related Prognostic Factors for Local Recurrence after Primary Radiation Therapy for Patients with Primary T1N0 Glottic Cancer (T1N0 성문암의 방사선치료관련 예후 인자 분석)

  • Kim Su-Ssan;Kim Sang-Yoon;Nam Soon-Yuhl;Choi Seung-Ho;Cho Kyung-Ja;Kim Jong-Hoon;Ahn Seung-Do;Shin Seong-Soo;Song Si-Yeol;Choi Eun-Kyung;Lee Sang-Wook
    • Korean Journal of Head & Neck Oncology
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    • v.19 no.1
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    • pp.34-40
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    • 2003
  • Objective: To analyze the treatment-related parameters after the radiotherapy of T1N0 squamous cell carcinoma of the glottic larynx. Materials and Methods: Between October 1989 and August 2000, 54 patients with histologically proven T1N0 squamous cell carcinoma of the glottic larynx who received definitive radiation therapy in Department of Radiation Oncology, Asan Medical Center were analyzed. They were all males with age ranged from 31 to 80 years (median 61 years). 1997 AJCC stages were 31 T1a, 23 T1b. Patients were treated with 4-MV X-rays with a parallel-opposed two-field technique. Ten patients received 66.0-68.4Gy at 1.2Gy per fraction twice daily, 21 patients received 64.8-66.6Gy at 1.8Gy per fraction once daily, and 23 patients received 66.0Gy at 2.0Gy per fraction once daily. Follow-up period was 16-119 months (median 56 months). Results: 5-year overall survival and local control rates for patients with T1 lesions were 87.0% and 88.5%, respectively. 5-year local control with larynx preservation rate was 90.5%. Host and tumor-related prognostic factors including age, stage, anterior commissure involvement and tumor bulk proved not to be significant. Only shorter overall treatment time among treatment-related factors had correlation with imporved local control. Conclusion: Comparable high local control rate with organ preservation was achieved with primary radiation therapy and salvage surgery. Shortening of overall treatment time is related to improved local control rate. To determine the optimal fractionation scheme, randomized trial is mandatory.

Synthesis Characteristics of ZnO Powder from Precursors Composed of Nitrate-Citrate Compounds (Nitrate-Citrate 혼합 전구체로부터 ZnO 입자의 합성반응 특성)

  • Yang, Si Woo;Lee, Seung Ho;Lim, Dae Ho;Yoo, Dong Jun;Kang, Yong
    • Korean Chemical Engineering Research
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    • v.54 no.3
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    • pp.299-304
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    • 2016
  • Characteristics of self-propagating reaction for the preparation of ZnO powder from precursors composed of nitrate and citrate compounds were examined. The ratio of C/N was maintained in range of 0.7~0.8 to initiate the self-propagating reaction between the reducing citrate and oxidizing nitrate groups. The samples were decomposed thermally by using TGA. The sudden decomposition occurred in the range of X > 0.5 in a very short time with a very sharp decrease of mass, indicating that the self-propagating reaction would occur. Friedman, Ozawa-Flynn-Wall and Vyazovkin methods were employed to predict the activation energy, reaction order and frequency factor of the reaction rate in the rate determining step of X < 0.5 range. The activation energy increased with increasing fractional conversion in the range of 46~130 (kJ/min). The reaction order decreased in the range of 2.9~0.9, while the frequency factor increased in the range of 85~278 ($min^{-1}$), respectively, with increasing the rate of temperature increase.

The electronic structure of the ion-beam-mixed Pt-Cu alloys by XPS and XANES

  • Lim, K.Y.;Lee, Y.S.;Chung, Y.D.;Lee, K.M.;Jeon, Y.;Whang, C.N.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.133-133
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    • 1998
  • In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K a(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

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Substrate tempperature dependence of crystalline Y2O3 films grown by Ionized Cluster Beam Deposition

  • Cho, M.H.;Whangbo, S.W.;Seo, J.G.;Choi, S.C.;Cho, S.J.;Whang, C.N.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.87-89
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    • 1998
  • The Y2O3 films on Si(111) was grown by ionized cluster beam depposition (ICBD) in ultrahigh-vacuum (UHV). The acceleration voltage and oxygen ppartial ppressure were fixed at 5 kV and 2$\times$10-5 Torr resppectively. The substrate tempperature was varied from 10$0^{\circ}C$ to $600^{\circ}C$ in order to find the deppendence of crystallinity of Y2O3 films on the substrate tempperature. The crystallinity of the films with the substrate tempperature studied using x-ray diffraction (XRD) and Rutherford backscattering sppectroscoppy (RES). Surface crystallinity and surface morpphology of the films were also investigated using the reflection high-energy electron diffraction (RHEED) and atomic force microscoppe (AFM) resppectively. The films grown at the substrate tempperature below 50$0^{\circ}C$showed the ppoly-crystalline structure of oxygen deficiency. On the contrary the single-crystalline structure was obtained at the substrate tempperature over 50$0^{\circ}C$ and the stochimetry was gradually matched as increasing the substrate tempperature. The surface morpphology showed the increase of the surface roughness as the substrate tempperature was increased upp to 50$0^{\circ}C$ The crystallinity of the film was not good and the minimum channeling yield $\chi$min was measured at 0.91 The stochiometric and high crystallinine film (surface $\chi$min=0.25) was obtained as the substrate tempperature increased upp to 60 $0^{\circ}C$ which indicate the tempperature was sufficient to migrate the depposited atom.

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The Study on Dielectric and RTA Property of Oxide Thin-films (산화물 박막 커패시터의 RTA 처리와 유전 특성에 관한 연구)

  • Kim, I.S.;Lee, D.Y.;Cho, Y.R.;Song, J.S.
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.23-25
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    • 2001
  • In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

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Scanning Acoustic Microsope System Using 200MHZ ZnO Transducer (ZnO를 이용한 초음파 현미경의 제작과 평가)

  • Jang, Ji-Won;Do, Si-Hong;Lee, Jong-Gyu
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.25 no.4
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    • pp.200-208
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    • 1989
  • To the purpose of preparation for investigating aspect of material that not revealed by the light microscope and extending our knowledge in applicable field, a scanning acoustic microscope system of 200MHz was organized and appraised its performance with experiments. Professor N.CHUBACHI in Tohoku University in Sendai, Japan provided the ZnO transducer with lens. The system for transmitting and receiving ultrasonic pulses of 200nsec was organized with a rectangular audio wave generator for modulation of 200MHz carrier wave, gating system for transmitting and receiving, mixer for converting intermediate frequency, a directional coupler, ZnO transducer, radio frequency amplifiers. detecter and personal computer. The Scanning system was driven in micro steps with three stepping motors in the direction of x, y and z axes. The system was a reflecting type scanning acoustic microscope and the operation program processed graphics data from receiving echo intensities. Photograph of fish scale obtained by optical microscope was compared with its image by the scanning acoustic microscope organized here. The result was satisfiable.

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Doped Sol-gel TiO2 Films for Biological Applications

  • Gartner, M.;Trapalis, C.;Todorova, N.;Giannakopoulou, T.;Dobrescu, G.;Anastasescu, M.;Osiceanu, P.;Ghita, A.;Enache, M.;Dumitru, L.;Stoica, T.;Zaharescu, M.;Bae, J.Y.;Suh, S.H.
    • Bulletin of the Korean Chemical Society
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    • v.29 no.5
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    • pp.1038-1042
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    • 2008
  • Mono and multilayer TiO2(Fe, $PEG_{600}$) films were deposited by the dip-coating on $SiO_2$/glass substrate using sol-gel method. In an attempt to improve the antibacterial properties of doped $TiO_2$ films, the influence of the iron oxides and polyethilenglycol ($PEG_{600}$) on the morphological, optical, surface chemical composition and biological properties of nanostructured layers was studied. Complementary measurements were performed including Spectroscopic Ellipsometry (SE), Scanning Electron Microscopy (SEM) coupled with the fractal analysis, X-Ray Photoelectron Spectroscopy (XPS) and antibacterial tests. It was found that different concentrations of Fe and $PEG_{600}$ added to coating solution strongly influence the porosity and morphology at nanometric scale related to fractal behaviour and the elemental and chemical states of the surfaces as well. The thermal treatment under oxidative atmosphere leads to films densification and oxides phase stabilization. The antibacterial activity of coatings against Escherichia Coli bacteria was examined by specific antibacterial tests.