• 제목/요약/키워드: Short circuit ratio

검색결과 112건 처리시간 0.025초

In Situ Sensing of Copper-plating Thickness Using OPD-regulated Optical Fourier-domain Reflectometry

  • Nayoung, Kim;Do Won, Kim;Nam Su, Park;Gyeong Hun, Kim;Yang Do, Kim;Chang-Seok, Kim
    • Current Optics and Photonics
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    • 제7권1호
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    • pp.38-46
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    • 2023
  • Optical Fourier-domain reflectometry (OFDR) sensors have been widely used to measure distances with high resolution and speed in a noncontact state. In the electroplating process of a printed circuit board, it is critically important to monitor the copper-plating thickness, as small deviations can lead to defects, such as an open or short circuit. In this paper we employ a phase-based OFDR sensor for in situ relative distance sensing of a sample with nanometer-scale resolution, during electroplating. We also develop an optical-path difference (OPD)-regulated sensing probe that can maintain a preset distance from the sample. This function can markedly facilitate practical measurements in two aspects: Optimal distance setting for high signal-to-noise ratio OFDR sensing, and protection of a fragile probe tip via vertical evasion movement. In a sample with a centimeter-scale structure, a conventional OFDR sensor will probably either bump into the sample or practically out of the detection range of the sensing probe. To address this limitation, a novel OPD-regulated OFDR system is designed by combining the OFDR sensing probe and linear piezo motors with feedback-loop control. By using multiple OFDR sensors, it is possible to effectively monitor copper-plating thickness in situ and uniformize it at various positions.

p-aminodiphenylamine을 이용한 폴리아닐린 분자량 조절 (Control of Polyaniline Molecular Weight Based on p-aminodiphenylamine)

  • 홍장후;전제열
    • 공업화학
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    • 제20권1호
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    • pp.75-79
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    • 2009
  • 아닐린 단량체(monomer)의 화학적 중합시 사슬성장의 핵심생성구간에서 아닐린 이합체(dimer, p-aminodiphenylamine)의 몰 비율을 조절하여 반응용액에 첨가함으로써 분자량(Mw, 20000~10000) 조절이 가능한 폴리아닐린을 합성 하였다. 중합반응의 개시로 부터 측정된 반응시간에 따른 open-circuit potential 측정결과 첨가된 이합체의 몰수가 증가할수록 중합속도가 빨라짐을 확인하였다. 첨가된 이합체의 몰수가 증가할수록 UV/Vis. 측정결과 합성된 폴리아닐린의 흡수띄가 단파장으로 이동하였으며, GPC 측정결과 분자량이 감소하는 것을 볼 수 있었다.

Multi-crystalline Silicon Solar Cell with Reactive Ion Etching Texturization

  • Park, Seok Gi;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun;Chang, Hyo Sik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.419-419
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    • 2016
  • High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

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적층형 태양전지를 위한 비정질실리콘계 산화막 박막태양전지의 광흡수층 및 반사체 성능 향상 기술 (Advances in Absorbers and Reflectors of Amorphous Silicon Oxide Thin Film Solar Cells for Tandem Devices)

  • 강동원
    • 한국전기전자재료학회논문지
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    • 제30권2호
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    • pp.115-118
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    • 2017
  • Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

태양광용 부스트 컨버터의 2중 루프 제어 및 단일 루프 제어의 특성 비교 (Comparative Study between Two and Single-loop Control of Boost Converter for PVPCS)

  • 김동환;임지훈;송승호;최주엽;안진웅;이상철;이동하
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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    • pp.153-159
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    • 2012
  • In photovoltaic system, the characteristic of photovoltaic module such as open circuit voltage and short circuit current will be changed because of cell temperature and solar radiation. Therefore, a boost converter of the PV system connects between the output of photovoltaic system and DC link capacitor of grid connected inverter as controlling duty ratio for maximum power point tracking(MPPT). This paper shows the dynamic characteristic of the boost converter by comparing single-loop control algorithm and two-loop control algorithm using both analog and digital control. The proposed both compensation method has been verified with computer simulation and simulation results obtained demonstrate the validity of the proposed control schemes.

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Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes

  • Kim, Jongseok;Kim, HyungTae;Kim, Seungtaek;Choi, Won-Jin;Jung, Hyundon
    • Current Optics and Photonics
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    • 제3권6호
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    • pp.516-521
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    • 2019
  • The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (VOC) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced VOC of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from VOC of the LED up to VOC of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.

Analog Predistortion High Power Amplifier Using Novel Low Memory Matching Topology

  • Kim, Jang-Heon;Woo, Young-Yun;Cha, Jeong-Hyeon;Hong, Sung-Chul;Kim, Il-Du;Moon, Jung-Hwan;Kim, Jung-Joon;Kim, Bum-Man
    • Journal of electromagnetic engineering and science
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    • 제7권4호
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    • pp.147-153
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    • 2007
  • This paper represents an analog predistortion linearizer for the high power amplifier with low memory effect. The high power amplifier is implemented using a 90-W peak envelope power(PEP) LDMOSFET at 2.14-GHz and an envelope short matching topology is applied at the active ports to minimize the memory effect. The analog predistortion circuit comprises the fundamental path and the cuber and quintic generating circuits, whose amplitudes and phases can be controlled independently. The predistortion circuit is tested for two-tone and wide-band code division multiple access(WCDMA) 4FA signals. For the WCDMA signal, the adjacent channel leakage ratios(ACLRs) at 5 MHz offset are improved by 12.4 dB at average output powers of 36 dBm and 42 dBm.

태양광용 부스트 컨버터의 디지털 제어기 설계 (The Design of Digital Controller for Boost Converter on Photovoltaic System)

  • 임지훈;최주엽;송승호;최익;정승환;안진웅;이동하
    • 한국태양에너지학회 논문집
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    • 제30권6호
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    • pp.22-27
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    • 2010
  • In photovoltaic system, the specifications of solar array is changed as open circuit voltage and short circuit current because of cell temperature and solar radiation. A boost converter of this system connects between output of photovoltaic system and DC link capacitor of grid connected inverter as controlling duty ratio. Therefore to supply stable voltage to the grid, a boost converter is need to keep certain voltage output. Considering the capacitance and the resistance of boost converter, this paper designed proper digital controller.

TTIP가 첨가된 저온소성용 TiO2 Paste를 이용한 DSSC의 효율 특성 (Efficiency Characteristics of DSSC Using TiO2 Paste for Low Temperature Annealing with TTIP)

  • 권성열;심창수;양욱
    • 한국전기전자재료학회논문지
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    • 제32권1호
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    • pp.53-57
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    • 2019
  • Recently, the application field of solar panels is increasing. Accordingly, the demand for flexible devices is also steadily increasing. It is therefore necessary to develop $TiO_2$ paste for low-temperature annealing for flexible DSSC fabrication. In this study, the $TiO_2$ paste for low-temperature annealing with varying molar ratio of titanium isopropoxide (TTIP) was prepared, and DSSC was fabricated and its characteristics were compared. As a result, there was no deformation of the particles on the surface in the SEM data. However, the highest open circuit voltage, short circuit current, and fill factor were measured in the DSSC unit cell prepared by adding 0.5 mol of TTIP to the $TiO_2$ paste, and the highest efficiency was 4.148%.

자속센서리스 회전자 층간단락 진단기법 및 특성해석 (Diagnosis Method and Characteristic Analysis of Shorted Turns on Generator Rotor using Flux Sensorless)

  • 김선자;전윤석;이승학;정병환;이명언;최규하
    • 전력전자학회논문지
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    • 제10권3호
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    • pp.257-263
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    • 2005
  • 발전기의 회전자 권선의 층간단락이 발생하면 자속의 불평형과 비대칭적인 발열로 인한 불안정한 진동이 발생하게 된다. 이러한 층간단락으로 발생될 수 있는 심각한 사고를 방지하기 위하여 회전자 권선의 층간단락 진단기법에 관한 연구는 매우 중요하다. 현재 운전중 진단기법이 주로 사용되고 있는 센서부착방식의 단점을 개선하기 위해 본 논문에서는 발전기의 계자 층간단락을 검출할 수 있는 새로운 센서없는 방법을 제안하였고 제안된 방식에서는 발전기에서의 전압 및 전류의 측정값만으로 단락현상을 판단할 수 있도록 하였다. 제안된 방식의 적용 가능성을 검토하기 위해 디지털 시뮬레이션을 통해 공극자속밀도, 누설자속, 발전된 전압 및 단락계자전류 등과 관련된 특성을 이론적으로 분석함으로써 단락 판정을 위한 근거를 제시하였다.