• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.62 no.12
• /
• pp.1647-1656
• /
• 2013

Although the demand for electricity has been increasing these days, it becomes more difficult to find new sites for large-scale power generation plants near urban areas due to environmental and economic issues. Therefore, new power plants are forced off to rural or desolate coastal areas. As a result, there is significant regional imbalance in power generation and consumption between urban and rural areas in South Korea. This paper investigates the feasibility of high-voltage DC (HVDC) system as a candidate for electric power transmission system from east-coastal sites to metropolitan area. To this end, this paper analyzes transient stability and dynamic impact of a HVDC transmission system and compares the results to conventional high-voltage AC (HVAC) transmission systems via PSS/E simulation. This paper also examines the effect of HVDC system to voltage variation and low-frequency resonance in the neighboring buses in the grid using ESCR(Effective Short Circuit Ratio)과 UIF(Unit Interaction Factor) indices.

• Journal of Advanced Marine Engineering and Technology
• /
• v.23 no.3
• /
• pp.352-359
• /
• 1999

This paper is a research for removing the alternators hunting which came about during the par-allel running. The four-pole six-phase alternator is equipped with the converter made out of twelve diodes to rectify all the waves. The hunting came about during the battery charging due to the hunting inducing point existed in r. p. m band 1575[rpm-1690[rpm] To remove the hunting inducing point We modified the four-pole six-phase alternator into the four-pole twevel-phase and increased the short-circuit ratio by decreasing the field coil pitch and increasing the field coil turns. But this method has two defects the first the alternator structure becomes complicating and the second the second the alternator equipped with the converter used in general purpose lately such as the car alternator can not be run in parallel wlthout modifying. To remove the defects the equalizing line was connected between the same phase of the alterna-tor to flow the synchronizing current which syncronize the phases of generator electromotive forces by which the alternator can be run in parallel without reference to the hunting inducing point and without modifying.

• Textile Coloration and Finishing
• /
• v.26 no.4
• /
• pp.347-352
• /
• 2014

Film thickness dependent nanostructure evolution by a post annealing was investigated in poly (3-hexylthiophene):phenyl-C61-butyric acid methyl ester(P3HT:PCBM) films for organic solar cells which were fabricated by dichlorobenzene(DCB) solvent. In case of a 70nm thin film, the thermal annealing process affected to slight increment of the P3HT crystals in the surface region. On the other hand, large number of small sized P3HT crystals near the surface region was formed in the 200nm thick film. The solar cell devices showed the 3% power conversion efficiency(PCE) in 1:0.65 and 1:1 ratio(by weight) of P3HT and PCBM in 70nm and 200nm thickness conditions, respectively. Despite to the similar PCE, the short circuit current Jsc was different in 70nm and 200nm devices, which was related to the different nanostructure of P3HT:PCBM after thermal annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.39-40
• /
• 2007

The analysis of fault current limiting characteristics according to variation of fault current level in the integrated three-phase flux-lock type superconducting fault current limiter (SFCL), which consisted of three-phase flux-lock reactor wound on an iron core with the same turn's ratio between coil 1 and coil 2 for each single phase, was performed. To analyze the current limiting characteristics of this integrated three-phase flux-lock type SFCL, the short circuit experiments was carried out the various three-phase faults such as the single line-to-ground fault, the double line-to-ground fault, the triple line-to-ground fault. From the experimental results, the fault current limiting characteristic was improved according to increase of fault current level.

• Progress in Superconductivity and Cryogenics
• /
• v.21 no.3
• /
• pp.38-42
• /
• 2019

To protect the power systems from fault current, the rated protective equipment should be installed. However growth of power system scale and concentration of loads caused the large fault current in power transmission system and distribution system. And capacities of installed protective equipment have been exceeded the due to increase of fault current. This increase is not temporary phenomenon but will be steadily as long as the industry develops. The power system need a counter measurement for safety, so superconducting fault current limiter (SFCL) has been received attention as an effective solutions to reduce the fault current. For the above reasons various type SFCL is studied recently. In this paper, the operational characteristics and power burden of trigger type SFCL is studied. The trigger type SFCL has been used for real system research in many countries. And another trigger type SFCL (double quench trigger type SFCL) is also studied. For this paper, short circuit test is performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.5
• /
• pp.463-473
• /
• 2023

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.5
• /
• pp.717-722
• /
• 2016

In this paper, in order to support the peak current limiting function depending on the intensity of the fault current at the early stage of failure, a two magnetically coupled type superconducting fault current limiter (SFCL) is proposed, which includes high-Tc superconducting (HTSC) element 1, where the existing primary and secondary coils are connected to one iron core in parallel, and HTSC element 2, which is connected to the tertiary winding using an additional iron core. The results of the experiments in this study confirmed that the two magnetic coupling type SFCL having coil 1 and coil 2 connected in parallel using dual iron cores is capable of having only HTSC element 1 support the burden of the peak current when a failure occurs. The reason for this is that although HTSC element 1 was quenched and malfunctioned because the instantaneous factor of the initial fault current was large, the current flowing to coil 3 did not exceed the critical current, which would otherwise cause HTSC element 2 to be quenched and not function. In order to limit the peak current upon fault through the sequential HTSC elements, the design should allow it to have the same value as the low value of coil 1 while having coil 3 possess a higher self-inductance value than coil 2. In addition, a short-circuit simulation experiment was conducted to examine and validate the current limiting and recovery characteristics of the SFCL when the winding ratio between coil 1 and coil 2 was 0.25. Through the analysis of the short-circuit tests, the current limiting and recovery characteristics in the case of the additive polarity winding was confirmed to be superior to that of the subtractive polarity winding.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.238-239
• /
• 2010

Dimethyl sulphoxide (DMSO) is one of the widely-used secondary dopants in order to enhance the conductivity of poly(3, 4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) film. In this work, we investigated the effect of DMSO doping in to PEDOT:PSS on the electrical performance of the bulk heterojunction photovoltaics consisting of poly(3-hexylthiophene-2, 5-diyl) and phenyl-C61-butyric acid methyl ester. Correlation between the power conversion efficiency and the mechanism of improving conductivity, surface morphology, and contact properties was examined. The PEDOT:PSS films, which contain different concentration of DMSO, have been prepared and annealed at different annealing temperatures. The mixture of DMSO and PEDOT:PSS was prepared with a ratio of 1%, 5%, 15%, 25%, 35%, 45%, 55% by volume of DMSO, respectively. The DMSO-contained PEDOT:PSS solutions were stirred for 1hr at $40^{\circ}C$, then spin-coated on the ultra-sonicated glass. The spin-coated films were baked for 10min at $65^{\circ}C$, $85^{\circ}C$, and $120^{\circ}C$ in air. In order to investigate the electrical performance, P3HT:PCBM blended film was deposited with thickness of 150nm on DMSO-doped PEDOT:PSS layer. After depositing 100nm of Al, the device was post-annealed for 30min at $120^{\circ}C$ in vacuum. The fabricated cells, in this study, have been characterized by using several techniques such as UV-Visible spectrum, 4-point probe, J-V characteristics, and atomic force microscopy (AFM). The power conversion efficiency (AM 1.5G conditions) was increased from 0.91% to 2.35% by tuning DMSO doping ratio and annealing temperature. It is believed that the improved power conversion efficiency of the photovoltaics is attributed to the increased conductivity, leading to increasing short-circuit current in DMSO-doped PEDOT:PSS layer.

• Korean Chemical Engineering Research
• /
• v.48 no.5
• /
• pp.654-659
• /
• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Polymer(Korea)
• /
• v.33 no.3
• /
• pp.191-197
• /
• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.