• Title/Summary/Keyword: Short circuit

Search Result 1,674, Processing Time 0.036 seconds

Dominant Migration Element in Electrochemical Migration of Eutectic SnPb Solder Alloy in D. I. Water and NaCl Solutions (증류수 및 NaCl 용액내 SnPb 솔더 합금의 Electrochemical Migration 우세 확산원소 분석)

  • Jung, Ja-Young;Lee, Shin-Bok;Yoo, Young-Ran;Kim, Young-Sik;Joo, Young-Chang;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.13 no.3 s.40
    • /
    • pp.1-8
    • /
    • 2006
  • Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

  • PDF

Discharge Luminous Phenomena Caused Between ZnO Surge Arrester Block and Electrodes (산화아연 피뢰기 소자와 전극사이에 발생하는 방전광 현상)

  • Lee, Bok-Hee;Park, Keon-Young;Kang, Sung-Man
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.19 no.3
    • /
    • pp.44-50
    • /
    • 2005
  • This paper deals with the characteristics and reduction methods of the plasma luminosity caused between the ZnO surge arrester block and metal electrodes. In this study, the impulse current generator that can generate $8/20[{\mu}s]$ impulse currents with a peak short-circuit of 10[kA] is designed and fabricated. Plasma luminosity phenomena for fine and used ZnO blocks were observed as a function of the contact states between the ZnO block and electrodes and the polarity of applied impulse voltages. As a result, discharge luminous events are produced near the contact edges between the ZnO block and metal electrodes. The discharge plasma luminosity between the ZnO surge arrester block and low potential electrode is more intensive than that between the ZnO surge arrester block and high potential electrode. Surface flashover of ZnO blocks are mainly caused by plasma generation near the edge of metal electrode. Also, plasma luminosity for the fine ZnO blocks is less than that for the used ZnO blocks. Plasma luminosity at the contact of the ZnO block and ring-type electrode is more intensive than that at the contact of ZnO block and disk electrode. It is desirable to use the disk electrode with the proper contact area to reduce the plasma luminosity caused at the contact point between the ZnO block and electrodes.

Graphene Quantum Dot Interfacial Layer for Organic/Inorganic Hybrid Photovoltaics Prepared by a Facile Solution Process (용액 공정을 통한 그래핀 양자점 삽입형 유/무기 하이브리드 태양전지 제작)

  • Kim, Youngjun;Park, Byoungnam
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.19 no.6
    • /
    • pp.646-651
    • /
    • 2018
  • This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

GPS L1, L2C Signal Acquisition Performance of GPS Software Receiver with respect to Pseudolite Pulsing Scheme (의사위성의 펄싱 방법에 대한 GPS L2C 신호획득 성 소능프분트석웨어 수신기의 L1, L2C 신호획득 성능분석)

  • Kwon, Keum-Cheol;Yand, Cheol-Kwan;Shim, Duk-Sun;Chung, Tae-Sang;Kee, Chand-Don
    • Journal of Advanced Navigation Technology
    • /
    • v.16 no.1
    • /
    • pp.16-26
    • /
    • 2012
  • Pseudolites are ground-based transmitters that can be configured to emit GPS-like signals for enhancing the GPS by providing increased accuracy, integrity, and availability. However, a pseudolite (PL) can interfere with GPS satellite signals while it is transmitting or cause saturation to automatic gain control circuit. To solve these problems pulsing scheme is used, which transmits PL signal during a short period of time. In this paper the effect of the number of PL and pulsing scheme on the software GPS L1 and L2C signal acquisition performance is studied for the three pulsing schemes such as static pulsing, sweep pulsing, and pseudo random pulsing. For GPS L1 signal, static pulsing shows the best signal acquisition and tracking performance with one PL, and random pulsing shows the best performance with more than or equal to two PLs. For GPS L2C signal, all three pulsing schemes show the similar signal acquisition and tracking performance, but static pulsing shows a little better performance. For GPS L1 and L2C signals, software GPS receivers can do positioning with up to three PLs.

Compact Half Bow-tie-type Quasi-Yagi Antenna for Terrestrial DTV Reception (지상파 디지털 방송 수신용 소형 반 보우 타이 형 준-야기 안테나)

  • Lee, Jong-Ig;Yeo, Junho;Park, Jin-Taek
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.14 no.4
    • /
    • pp.1908-1914
    • /
    • 2013
  • In this paper, we introduce a design method for a broadband planar quasi-Yagi antenna (QYA) for terrestrial digital television (DTV) reception. The coplanar strip line which feeds the driver dipole is connected to a microstrip line and is terminated by short circuit. By appending a wide strip-type rectangular director at a location close to the driver dipole, broadband impedance matching and gain enhancement in a high frequency region are obtained. The gain characteristics in a low frequency region are improved by adding a reflector formed by a truncated ground plane. To reduce the antenna size, the strip-type dipole and reflector are modified to half bow-tie (V)-shaped elements. The effects of various parameters on the antenna characteristics are examined. An antenna, as a design example for the proposed antenna, is designed for the operation in the frequency band of 470-806 MHz for terrestrial DTV. The optimized antenna is fabricated on an FR4 substrate and the experimental results show that the antenna has a good performance such as a frequency band of 450-848 MHz for a VSWR < 2, gain > 4.1 dBi, and front-to-back ratio > 10.4 dB.

Influence of Carrier Trap in InAs/GaAs Quantum-Dot Solar Cells (InAs/GaAs 양자점 태양전지에서 전하트랩의 영향)

  • Han, Im Sik;Kim, Jong Su;Park, Dong Woo;Kim, Jin Soo;Noh, Sam Kyu
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.1
    • /
    • pp.37-44
    • /
    • 2013
  • In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

A Study on the Cobalt Electrodeposition of High Aspect Ratio Through-Silicon-Via (TSV) with Single Additive (단일 첨가제를 이용한 고종횡비 TSV의 코발트 전해증착에 관한 연구)

  • Kim, Yu-Jeong;Lee, Jin-Hyeon;Park, Gi-Mun;Yu, Bong-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2018.06a
    • /
    • pp.140-140
    • /
    • 2018
  • The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

  • PDF

Characteristics of the Flux-lock Type Superconducting Fault Current Limiter According to the Iron Core Conditions (자속구속형 초전도 전류제한기의 철심조건에 따른 특성)

  • Nam, Gueng-Hyun;Lee, Na-Young;Choi, Hyo-Sang;Cho, Guem-Bae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.20 no.7
    • /
    • pp.38-45
    • /
    • 2006
  • The superconducting fault current limiters(SFCLs) provide the effect such as enhancement in power system reliability due to limiting the fault current within a few miliseconds. Among various SFCLs we have developed a flux-lock type SFCL and exploited a special design to effectively reduce the fault current according to properly adjustable magnetic field after the short-circuit test. This SFCL consists of two copper coils wound in parallel on the same iron core and a component using the YBCO thin film connected in series to the secondary copper coil. Meanwhile, operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. To analyze the operational characteristics, we compared closed-loop with open-loop iron core. When the applied voltage was 200[Vrms] in the additive polarity winding, the peak values of the line current the increased up to 30.71[A] in the closed-loop and 32.01[A] in the open-loop iron core, respectively. On the other hand, in the voltages generated at current limiting elements were 220.14[V] in the closed-loop and 142.73[V] in the opal-loop iron core during first-half cycle after fault instant under the same conditions. We confirmed that the open-loop iron core had lower power burden than in the closed-loop iron core. Consequently, we found that the structure of iron core enabled the flux-lock type SFCL at power system to have the flexibility.

cAMP-Dependent Signalling is Involved in Adenosine-Stimulated $Cl^-$ Secretion in Rabbit Colon Mucosa

  • Oh, Sae-Ock;Kim, Eui-Yong;Jung, Jin-Sup;Woo, Jae-Suk;Kim, Yong-Keun;Lee, Sang-Ho
    • The Korean Journal of Physiology and Pharmacology
    • /
    • v.2 no.4
    • /
    • pp.521-527
    • /
    • 1998
  • An important property of the intestine is the ability to secrete fluid. The intestinal secretion is regulated by a number of substances including vasoactive intestinal peptide (VIP), ATP and different inflammatory mediators. One of the most important secretagogues is adenosine during inflammation. However, the controversy concerning the underlying mechanism of adenosine-stimulated $Cl^-$ secretion in intestinal epithelial cells still continues. To investigate the effect of adenosine on $Cl^-$ secretion and its underlying mechanism in the rabbit colon mucosa, we measured short circuit current ($I_{SC}$) under automatic voltage clamp with DVC-1000 in a modified Ussing chamber. Adenosine, when added to the basolateral side of the muocsa, increased $I_{SC}$ in a dose-dependent manner. The adenosine-stimulated $I_{SC}$ response was abolished when $Cl^-$ in the bath solution was replaced completely with gluconate. In addition, the $I_{SC}$ response was inhibited by a basolateral Na-K-Cl cotransporter blocker, bumetanide, and by apical $Cl^-$ channel blockers, dephenylamine-2-carboxylate (DPC), 5-nitro-2-(3-phenyl-propylamino)-benzoate (NPPB), glibenclamide. Amiloride, an epithelial $Na^+$ channel blocker, and 4,4-diisothiocyanato-stilbene-2,2-disulphonate (DIDS), a $Ca^{2+}-activated$ $Cl^-$ channel blocker, had no effect. In the mucosa pre-stimulated with forskolin, adenosine did not show any additive effect, whereas carbachol resulted in a synergistic potentiation of the $I_{SC}$ response. The adenosine response was inhibited by 10 ${\mu}M$ H-89, an inhibitor of protein kinase A. These results suggest that the adenosine-stimulated $I_{SC}$ response is mediated by basolateral to apical $Cl^-$ secretion through a cAMP-dependent $Cl^-$ channel. The rank order of potencies of adenosine receptor agonists was $5'-(N-ethylcarboxamino)adenosine(NECA)>N^6-(R-phenylisopropyl)adenosine(R-$ PIA)>2-[p-(2-carbonylethyl)-phenyl-ethylamino]-5'-N-ethylcarboxaminoadenosine(CGS21680). From the above results, it can be concluded that adenosine interacts with the $A_{2b}$ adenosine receptor in the rabbit colon mucosa and a cAMP-dependent signalling mechanism underlies the stimulation of $Cl^-$ secretion.

  • PDF

Development of Microwave Water Surface Current Meter for General Use to Increase Efficiency of Measurements of River Discharges (하천유량측정의 효율성 향상을 위한 범용 전자파표면유속계 개발)

  • Kim, Youngsung;Noh, Joonwoo;Choi, Kwangsoon
    • Korean Journal of Ecology and Environment
    • /
    • v.47 no.3
    • /
    • pp.225-231
    • /
    • 2014
  • Discharge measurement during flood season is very difficult. Microwave water surface current meter (MWSCM) can measures river surface velocities easily without contacting water. This study introduces its improved version, MWSCM for general use. The existing version of MWSCM is for floods so that its applicable period in a year is short. It has been improved to extend its applicability in a year. The range of measurable velocity for MWSCM for general use is extended so it can be applied during normal flows as well as high flows. MWSCM for general use can measure the velocity range of $0.03{\sim}20.0ms^{-1}$, whereas MWSCM for floods can measure the velocity range of $0.5{\sim}10.0ms^{-1}$. To make such innovation of MWSCM for general use, the applied microwave frequency of MWSCM was changed from 10 GHz to 24 GHz. Waveguide slot array antenna has been designed with the new development of the circuit of transmitting and receiving part. Improvement requests on the existing MWSCM for floods - weight lightening, measured velocity stabilization, self-test, low power consumption, and waterproof and dampproof - from the users of it have been reflected for the development of the new version of MWSCM.