• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.3
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• pp.44-50
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• 2005

This paper deals with the characteristics and reduction methods of the plasma luminosity caused between the ZnO surge arrester block and metal electrodes. In this study, the impulse current generator that can generate $8/20[{\mu}s]$ impulse currents with a peak short-circuit of 10[kA] is designed and fabricated. Plasma luminosity phenomena for fine and used ZnO blocks were observed as a function of the contact states between the ZnO block and electrodes and the polarity of applied impulse voltages. As a result, discharge luminous events are produced near the contact edges between the ZnO block and metal electrodes. The discharge plasma luminosity between the ZnO surge arrester block and low potential electrode is more intensive than that between the ZnO surge arrester block and high potential electrode. Surface flashover of ZnO blocks are mainly caused by plasma generation near the edge of metal electrode. Also, plasma luminosity for the fine ZnO blocks is less than that for the used ZnO blocks. Plasma luminosity at the contact of the ZnO block and ring-type electrode is more intensive than that at the contact of ZnO block and disk electrode. It is desirable to use the disk electrode with the proper contact area to reduce the plasma luminosity caused at the contact point between the ZnO block and electrodes.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Journal of the Korean Electrochemical Society
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• v.22 no.2
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• pp.69-78
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• 2019

Lithium metal anode with the highest theoretical capacity to replace graphite anodes are being reviewed. However, the dendrite growth during repeated oxidation/reduction reaction on lithium metal surface, which results in poor cycle performance and safety issue has hindered its successful implementation. In our previous work, we solved this problem by using surface modification technique whereby a surface pattern on lithium metal anode is introduced. Although the micro-patterned Lithium metal electrode is beneficial to control Li metal deposition efficiently, it is difficult to control the mossy-like Li granulation at high current density ($>2.0mA\;cm^{-2}$). In this study, we introduce vinylene carbonate (VC) electrolyte additive on micro patterned lithium metal anode to suppress the lithium dendrite growth. Owing to the synergetic effect of micro-patterned lithium metal anode and VC electrolyte additive, lithium dendrite at a high current density is dense. As a result, we confirmed that the cycle performance was further improved about 6 times as compared with the reference electrode.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.190-195
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• 2011

To investigate the photon-trapping effect and scattering layer effect of $TiO_2$ multi-layer in dye-sensitized solar cell (DSSC) and the degree of recombination of electrons at the electrode treated $TiCl_4$, we formed electrodes of different conditions and obtained the most optimal electrode conditions. To estimate characteristics of the cell, IV curve, UV-Vis spectrophotometer, electrochemical impedance spectroscopy (EIS) and incident photon-to-current conversion efficiency (IPCE) were measured. As a result, we confirmed that the multi-layer's efficiency was higher than that of monolayer in the IV curve and the performance of $TiCl_4$ treated electrode was increased according to decreasing the impedance of EIS. Among several conditions, the efficiency of the cell with scattering layer is higher than that of a layer with the base electrode about 19%. Because the light scattering layer enhances the efficiency of the transmission wavelength and has long electron transfer path. Therefore, the value of the short circuit current increases approximately 10% and IPCE in the maximum peak also increases about 12%.

• Tuberculosis and Respiratory Diseases
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• v.40 no.3
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• pp.236-249
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• 1993

Background: Among the injurious agents to which the lung airspaces are constantly exposed are reactive species of oxygen. It has been widely believed that reactive oxygen species may be implicated in the etiology of lung injuries. In order to elucidated how this oxidant causes lung cell injury, we investigated the effects of exogenous $H_2O_2$ on alveolar epithelial barrier characteristics. Methods: Rat type II alveolar epithelial cells were plated onto tissue culture-treated polycarbonate membrane filters. The resulting confluent monolayers on days 3 and 4 were mounted in a modified Ussing chamber and bathed on both sides with HEPES-buffered Ringer solution. The changes in short-circuit current (Isc) and monolayer resistance (R) in response to the exogenous hydroperoxide were measured. To determine the degree of cellular catalase participation in protection against $H_2O_2$ injury to the barrier, experiments were repeated in the presence of 20 mM aminotriazole (ATAZ, an inhibitor of catalase) in the same bathing fluid as the hydroperoxide. Results: These monolayers have a high transepithelial resistance (>2000 ohm-$cm^2$) and actively transport $Na^+$ from apical fluid. $H_2O_2$(0-100 mM) was then delivered to either apical or basolateral fluid. Resulting indicated that $H_2O_2$ decreased Isc and R gradually in dose-dependent manner. The effective concentration of apical $H_2O_2$ at which Isc (or R) was decreased by 50% at one hour ($ED_{50}$) was about 4 mM. However, basolateral $H_2O_2$ exposure led to $ED_{50}$ for Isc (and R) of about 0.04 mM. Inhibition of cellular catalase yielded $ED_{50}$ for Isc (and R) of about 0.4 mM when $H_2O_2$ was given apically, while $ED_{50}$ for basolateral exposure to $H_2O_2$ did not change in the presence of ATAZ. The rate of $H_2O_2$ consumption in apical and basolateral bathing fluids was the same, while cellualr catalase activity rose gradually with time in culture. Conclusion: Our data suggest that basolateral $H_2O_2$ may affect directly membrane component (e.g., $Na^+,\;K^+$-ATPase) located on the basolateral cell surface. Apical $H_2O_2$, on the other hand, may be largely degraded by catalase as it passes through the cells before reaching these membrane components. We conclude that alveolar epithelial barrier integrity as measured by Isc and R are compromised by $H_2O_2$ being relatively sensitive to basolateral (and insensitive to apical) $H_2O_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.422.1-422.1
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• 2016

Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

• Journal of Astronomy and Space Sciences
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• v.25 no.4
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• pp.435-444
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• 2008

High energy charged particles are trapped by geomagnetic field in the region named Van Allen Belt. These particles can move to low altitude along magnetic field and threaten even low altitude spacecraft. Space Radiation can cause equipment failures and on occasions can even destroy operations of satellites in orbit. Sun sensors aboard Science and Technology Satellite (STSAT-l) was designed to detect sun light with silicon solar cells which performance was degraded during satellite operation. In this study, we try to identify which particle contribute to the solar cell degradation with ground based radiation facilities. We measured the short circuit current after bombarding electrons and protons on the solar cells same as STSAT-1 sun sensors. Also we estimated particle flux on the STSAT-l orbit with analyzing NOAA POES particle data. Our result clearly shows STSAT-l solar cell degradation was caused by energetic protons which energy is about 700keV to 1.5MeV. Our result can be applied to estimate solar cell conditions of other satellites.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.39-50
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• 1998

Wide-band sharp-transition filters are widely used in applications such as wireless CODEC design or medical systems. Since these filters suffer from large sensitivity and roundoff noise, large word-length is required for the VLSI implementation, which increases the hardware size and the power consumption of the chip. In this paper, a low-power implementation technique for digital filters with wide-band sharp-transition characteristics is proposed using CPL (Complementary Pass-Transistor Logic), LWDF (Lattice Wave Digital Filter) and a modified DIFIR (Decomposed & Interpolated FIR) algorithm. To reduce the short-circuit current component in CPL circuits due to threshold voltage reduction through the pass transistor, three different approaches can be used: cross-coupled PMOS latch, PMOS body biasing and weak PMOS latch. Of the three, the cross-coupled PMOS latch approach is the most realistic solution when the noise margin as well as the energy-delay product is considered. To optimize CPL transistor size with insight, the empirical formulas for the delay and energy consumption in the basic structure of CPL circuits were derived from the simulation results. In addition, the filter coefficients are encoded using CSD (Canonic Signed Digit) format and optimized by a coefficient quantization program. The hardware cost is minimized further by a modified DIFIR algorithm. Simulation result shows that the proposed method can achieve about 38% reductions in power consumption compared with the conventional method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.