• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.268-273
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• 2015

While analyzing the specimens before and after the thermal shock test, we found that the power drop rate of the bare cell was 5.08%, while the power drop rate of the ribboned cell was 16.49%. In comparative terms, the efficiency was lower at the ribboned cell than at the bare cell. While analyzing through EL (Electroluminescence) shots and cross sections, we tried to decipher the exact cause of the power drop. Although mere color change of the cell was observed at the surface of the bare cell, no abnormality could be found inside the cell. On the surface of the ribboned cell, the short circuit of gridfinger extended from the front part of the front electrode of the ribboned cells. Therefore, cracks occurred on the surface of the cell. Cracks also appeared inside the cell. While analyzing the I-V curve, we determined an increase in the leakage current and an increase of resistances in series in the bare cell. In the ribboned cell, the resistances in parallel reduced remarkably. An increase of resistances in series could also be verified. Conclusively, we deduced that the power drop rate in the bare cell is a life span of the cell itself; aging is the cause of power drop rate in cells. In case of ribboned cell, the power drop rate was directly influenced by internal cracks and an intermetallic compound layer joining the ribbon at the front electrode.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.55-61
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• 2012

We fabricated a-Si:H thin-film solar cell using the two-dimensional (2D) periodic patterned glass substrate. The use of a 3D periodic texture rather than a randomly texture at surface of TCO can result in higher short circuit current densities ($J_{sc}$). In order to analyze the optical effect of patterning glasses, ray-tracing simulations were performed. Also, p-i-n cells were deposited on patterned glasses as substrate by PECVD. UV-Vis spectroscopy, light I-V measurement were carried out for the optoelectronic characterization. The anti-reflective and light-trapping performance of patterning glass substrate was investigated by a comparison of experimental results with numerical simulations.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.6
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• pp.897-902
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• 2011

This study incorporates a welder and a generator as needed while using the generator to be used as a welder is to configure the system. As such, in order to offer an integrated system to prevent the rapid charging process to manage the power state information, system configuration is the most important. Ideally, the random controls the flow of charge is ideal for that. When charging is good as long as possible, less current. However, In this study, the most ideal fusion welder and generator as required by the generator or welder can be used as a system is proposed. Specifically, the damage can be caused by carelessness, so short-circuit protection, overload protection, reverse polarity protection, automatic charging system is all about, including the ability to adjust.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• New & Renewable Energy
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• v.9 no.2
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• pp.30-39
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• 2013

Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.755-759
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• 2008

New cathode materials $LaNi_{1-x}{Cu_x}{O_3}$ (typically $LaNi_{0.8}Cu_{0.2}O_3$) were synthesized using a co-precipitation method. The structure and morphology of the powders were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composite material [$Ce_{0.8}Sm_{0.2}O_{2-\ddot{a}}$(SDC) and carbonate (${Na_2}{CO_3},{Li_2}{CO_3}$)], NiO and $LaNi_{1-x}{Cu_x}{O_3}$ were used as the electrolyte, anode and cathode, respectively. The electrochemical performance of La-Ni-Cu-O perovskite oxide at low temperatures ($400{\sim}550^{\circ}C$) was studied. The results showed that $LaNi_{0.8}Cu_{0.2}O_3$ precursor powder prepared through a co-precipitation method and calcined at $860^{\circ}C$ for 2 h formed uniform grains with diameters in the range of $400{\sim}500\;nm$. The maximum power density and the short circuit current density of the single cell unit at $550^{\circ}C$ were found to be $390\;mW/cm^2$ and $968\;mA/cm^2$, respectively.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.38-42
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• 2018

Continuous efforts are being made to improve the efficiency of Si solar cells, which is the prevailing technology at this time. As opposed to the standard front-lit solar cell design, the back-lit design suffers no shading loss because all the metal electrodes are placed on one side close to the pn junction, which is referred to as the front side, and the incoming light enters the denuded back side. In this study, a systematic comparison between the two designs was conducted by means of computer simulation. Medici, a two-dimensional semiconductor device simulation tool, was utilized for this purpose. The $0.6{\mu}m$ wavelength, the peak value for the AM-1.5 illumination, was chosen for the incident photons, and the minority-carrier recombination lifetime (${\tau}$), a key indicator of the Si substrate quality, was the main variable in the simulation on a p-type $150{\mu}m$ thick Si substrate. Qualitatively, minority-carrier recombination affected the short circuit current (Isc) but not the opencircuit voltage (Voc). The latter was most affected by series resistance associated with the electrode locations. Quantitatively, when ${\tau}{\leq}500{\mu}s$, the simulation yielded the solar cell power outputs of $20.7mW{\cdot}cm^{-2}$ and $18.6mW{\cdot}cm^{-2}$, respectively, for the front-lit and back-lit cells, a reasonable 10 % difference. However, when ${\tau}$ < $500{\mu}s$, the difference was 20 % or more, making the back-lit design less than competitive. We concluded that the back-lit design, despite its inherent benefits, is not suitable for a broad range of Si solar cells but may only be applicable in the high-end cells where float-zone (FZ) or magnetic Czochralski (MCZ) Si crystals of the highest quality are used as the substrate.

• The Korean Journal of Physiology
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• v.13 no.1_2
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• pp.13-22
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• 1979

Studies have been conducted using isolated surviving skin of Rana temporalia in an attempt to evaluate the effect of N-ethylmaleimide (NEM) on the epithelial $Na^+$ transport. Active transport of $Na^+$ across the skin was estimated by measuring short circuit current (SCC). NEM administered to the outside surface of the skin in concentration of $0.5{\times}10^{-4}-2.5{\times}10^{-4}M$ induced $20{\sim}40%$ increase during the first 30 mintues, followed by a gradual reduction in SCC. With NEM above $4{\times}10^{-4}M$, SCC was inhibited from the beginning. Qualitatively similar results were obtained when NEM was added to the inside bathing medium. However, the concentration of NEM for a similar effect was much higher with the drug in the inside bathing medium than in the outside bathing medium. The oxygen consumption of the skin was inhibited by NEM of above $10^{-4}M$, the effect being of approximately the same magnitude as that on SCC. The activity of $Na^+-K^+$ ATPase of the skin was not inhibited by NEM below $10^{-3}M$, but it was dramatically reduced with $1.2{\times}M$ NEM. The effects of NEM $(10^{-4}M)$ on the SCC and oxygen consumption could be eliminated by adding cysteine $(10^{-4}-10^{-3}M)$ in the medium, indicating that the SH group is involved in the action of NEM in the frog skin. On the basis of these results, the mode of action of NEM on the $Na^+$ transport across the frog skin was discussed.