• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.71-76
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• 2008

H.264(or MPEG-4/AVC pt.10) is a high performance video coding standard, and is widely used. Variable length code (VLC) of the H.264 standard compresses data using the statistical distribution of values. A decoder parses the compressed bit stream and searches decoded values in lookup tables, and the decoding process is not easy to implement by hardware. We propose an architecture of variable length decoder(VLD) for the H.264 baseline profile(BP) L4. The CAVLD decodes syntax elements using the combination of arithmetic units and lookup tables for the optimized hardware architecture. A barral shifter and a first 1's detector parse NAL bit stream, and are shared by Exp-Golomb decoder and CAVLD. A FIFO memory between CAVLD and the reorder unit and a buffer at the output of the reorder unit eliminate the bottleneck of data stream. The proposed VLD is designed using Verilog-HDL and is implemented using an FPGA. The synthesis result using a 0.18um standard CMOS technology shows that the gate count is 22,604 and the decoder can process HD($1920{\times}1080$) video at 120MHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1566-1573
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• 2016

This paper presents a beam-forming receiver with polyphase In-phase/Quadrature-phase (I/Q) network for airborne communication. In beam-forming receiver, the insertion loss (IL) difference between input path increases the receiver noise figure (NF). The major element for generating IL difference is the impedance variation of phase shifter. In order to maintain a constant IL in every phase, this paper propose a lossless polyphase I/Q network based beam-forming receiver. The proposed lossless polyphase I/Q network has low Q-factor and high impedance for drive back-end VGA (Variable gain amplifier) block with low insertion loss. The 2-stage VGA controls in-phase and quadrature-phase amplitude level for vector summation. The proposed beam-forming receiver prototype is fabricated in TSMC $0.18{\mu}m$ CMOS process. The prototype cover the $360^{\circ}$ with $5.6^{\circ}$ LSB. The average RMS phase error and amplitude error is approximately $1.6^{\circ}$ and 0.3dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.336-343
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• 2018

We herein present the design and fabrication of a Rx core chip operating in the X-band (10.5~13 GHz) using Win's commercial $0.25-{\mu}m$ GaAs pHEMT process technology. The X-band core chip comprises a low-noise amplifier, a four-bit phase shifter, and a serial-to-parallel data converter. The size is $1.75mm{\times}1.75mm$, which is the state-of-the-art size. The gain and noise figure are more than 10 dB but less than 2 dB, and both the input and output return losses are less than 10 dB. The RMS phase error is less than $5^{\circ}$, and the P1dB is 2 dBm at 12.5 GHz, the performance of which is equivalent to other GaAs core chips. The fabricated core chip was packaged in a QFN package type with a size of $3mm{\times}3mm$ for the convenience of assembly. We confirmed that the performance of the packaged core chip was almost the same as that of the chip itself.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.45-51
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• 2009

The propagation characteristics in parallel plate waveguide with dielectric layer having periodic metal strip pattern are investigated. PIN diode ON/OFF states are regarded as the short and open circuit, respectively, in the simulation using CST's MWS. The $11.25^{\circ}$, $22.5^{\circ}$, and $45^{\circ}$ layers which can be used for X-band 4-bit Radant lens phase shifter, are designed. The simulated results for each dielectric layer are $11.28^{\circ}$, $23.2^{\circ}$, and $46.22^{\circ}$, respectively. Also, the equivalent circuit of each layer at the operating band is realized and simulated using Agilent's ADS. The ADS simulated results are compared with the MWS simulated ones. Measured differential phase shills at the center frequency are $9.6^{\circ}$, $22.4^{\circ}$, and $43^{\circ}$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.93-100
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• 2009

This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.7
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• pp.635-645
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• 2016

In this paper, we showed the phase noise of voltage controlled oscillator(VCO) can be radically improved using FLL(Frequency Locked Loop). At first, a 5 GHz VCO is fabricated using a hair-pin resonator. The fabricated VCO shows a phase noise of -53.1 dBc/Hz at 1 kHz frequency offset. In order to improve the phase noise of the fabricated VCO, a FLL is constructed using the feedback loop that consists of the VCO, a frequency detector composed of 5 GHz resonator, loop-filter, and level shifter. The fabricated FLL is designed to oscillate at a frequency of 5 GHz, and its measured phase noise is about -120.6 dBc/Hz at 1 kHz offset frequency. As a result, the phase noise of VCO can be radically improved by about 67.5 dB applying FLL. In addition, the measured phase noise performance is close to that of crystal oscillator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.82-92
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• 2008

Recently, many digital signal processing(DSP) applications such as H.264, CDMA and MP3 are predominant tasks for modern high-performance portable devices. These applications are generally computation-intensive, and therefore, require quite complicated accelerator units to improve performance. Designing such specialized, yet fixed DSP accelerators takes lots of effort. Therefore, DSPs with multiple accelerators often have a very poor time-to-market and an unacceptable area overhead. To avoid such long time-to-market and high-area overhead, dynamically reconfigurable DSP architectures have attracted a lot of attention lately. Dynamically reconfigurable DSPs typically employ a multi-functional DSP accelerator which executes similar, yet different multiple kinds of computations for DSP applications. With this type of dynamically reconfigurable DSP accelerators, the time to market reduces significantly. However, integrating multiple functionalities into a single IP often results in excessive control and area overhead. Therefore, delay and power consumption often turn out to be quite excessive. In this thesis, to reduce power consumption of dynamically reconfigurable IPs, we propose a novel fine-grained clock gating scheme, and to reduce size of dynamically reconfigurable IPs, we propose a compact multiplier-less multiplication unit where shifters and adders carry out constant multiplications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.7-14
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• 2008

In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.253-259
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• 2016

This paper introduces a new variable power divider circuit with an arbitrary power division ratio ranging from $1:{\infty}$ to ${\infty}:1$. The proposed power divider circuit consists of one branch-line coupler to be a good input matching characteristic, two variable phase shifters with 90-degree phase variation to be connected two output paths of the branch-line coupler, and one ring-hybrid coupler to combine output signals of two variable phase shifter. The power division ratio between the two output ports of the proposed power divider can be easily controlled by the phase variation of the two phase shifter. The proposed power divider circuit fabricates on laminated RF-35 (h = 20 mil, er=3.5; Taconic) with a center frequency of 2 GHz. The power division ratio of the fabricated prototype varies from about 1:1000 to 5000000:1, with an input reflection characteristic(S11) of below -20 dB, an insertion loss of about -1.0 dB, and an isolation characteristic of below -17 dB between two output ports in the range 1.9-2.1 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.613-623
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• 2012

In this paper, we present an ultra miniaturized voltage tuned oscillator, with HMIC-type amplifier and phase shifter, using LTCC artificial dielectric resonator. ADR which consists of periodic conductor patterns and stacked layers has a smaller size than a dielectric resonator. The design specification of ADR is obtained from the design goal of oscillator. The structure of the ADR with a stacked circular disk type is chosen. The resonance characteristic, physical dimension and stack number are analyzed. For miniaturization of ADRO, the ADR is internally implemented at the upper part of the LTCC substrate and the other circuits, which are amplifier and phase shifter are integrated at the bottom side respectively. The fabricated ADRO has ultra small size of $13{\times}13{\times}3mm^3$ and is a SMT type. The designed ADRO satisfies the open-loop oscillation condition at the design frequency. As a results, the oscillation frequency range is 2.025~2.108 GHz at a tuning voltage of 0~5 V. The phase noise is $-109{\pm}4$ dBc/Hz at 100 kHz offset frequency and the power is $6.8{\pm}0.2$ dBm. The power frequency tuning normalized figure of merit is -30.88 dB.