• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.813-815
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• 2008

We prepared highly transparent and conductive Oxide/Metal/Oxide(OMO) multilayer by sputtering and developed wet etching process of OMO with a clear edge shape for the first time. The transmittance and sheet-resistance of the OMO are about 89% and $3.3\;{\Omega}/sq.$, respectively. We adopted OMO as a gate electrode of transparent TFT (TTFT) array and integrated OLED on top of the TTFT to result in high aperture ratio of bottom emission AM-OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.288-291
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• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

• Carbon letters
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• v.6 no.1
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• pp.31-40
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• 2005

The carbon nanofibers (CNFs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. The CNFs prepared from $C_3H_8$ at $550^{\circ}C$ was selected as the purification sample due to the higher content of impurity than that prepared from other conditions. In this study, we carried out the purification of CNFs by oxidation in air or carbon dioxide after acid treatment, and investigated the influence of purification parameters such as kind of acid, concentration, oxidation time, and oxidation temperature on the structure of CNFs. The metal catalysts could be easily eliminated from the prepared CNFs by liquid phase purification with various acids and it was verified by ICP analysis, in which, for example, Ni content decreased from 2.51% to 0.18% with 8% nitric acid. However, the particulate carbon and heterogeneous fibers were not removed from the prepared CNFs by thermal oxidation in air and carbon dioxide. This result can be explained by that the direction of graphene sheet in CNFs is vertical to the fiber axis and the CNFs are oxidized at about the similar rate with the impurity carbon.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.4
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• pp.126-133
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• 2015

To enhance the productivity and quality of the compound process of progressive dies and transfer dies, the semi-progressive method is applied in the material supply step to produce blanks, and then the transfer method is applied. Parts are transferred among processes by means of the finger and transfer bar in the transfer die, and the final seat cushion panel is produced. The main challenge in the current study is how to deform a seat cushion panel while meeting the design specifications without any defects. In order to obtain this technology, a sheet metal-forming simulation and die forming of the seat cushion panel were adopted; as a result, a compound die-forming technology for the automotive seat cushion panel, combining both semi-progressive die and transfer die for continuous production, was successfully developed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1521-1524
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• 2003

Currently the plates used for the various structures has a tendency to being slim to the degree of the sheet metal vis-a-vis the overall measurements of the structure, and the conditions of their usage and load have been getting diverse. As the structure material has been used more and more under the various conditions, the necessity of the strength analysis is to be required. While most of these methods are simply based on the strain gaging method; that is, directly attaching most of the material to the gage, using the non-contact method is still in the early stage. One of the non-contact methods is by the use of the laser that has high-level of the accuracy for the measurement, and this laser also has excellent characteristics on which many studies for its applications are focused throughout the many fields. Therefore, this dissertation is on the measurement of the strain caused by the characteristics of the TIG welded zone which is used with 3D ESPI system that is functionally modified through the laser ESPI system.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.3
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• pp.877-885
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• 1995

Cold forging die for metal scissor is made by electric discharge machine. The impression of female die is made by electric discharge machine, the heat treatment is applied, and the impression is polished. When we forge goods by using this kind of die, the abrasion is severe and the crack occurs after forging about 240 strokes. Because the die should be frequently produced in the case, the cost rises, the work is delayed, and the precesion of goods is not good. Therefore, the electric discharge machine was not used in this study. Main die was produced by making hob, installing the hob to cold hobbing press, indenting the die material, and cold hobbing the impression. The die life was increased to 5,000-6,000 strokes in this case. In the future study, the die life will be increased to 10,000 strokes by changing the following : (1) the pre-treatment of slug, (2) the structure of die block, (3) the heat treatment of die material

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.6
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• pp.1034-1040
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• 2003

Tension mask is a part of CRT type devices, which is installed right behind glass-made front panel. Numerous slits on the thin metal sheet enable the electron beams emitted from posterior gun to be focused, resulting in enhanced definition. Flattened and enlarged displays necessitate the imposition of pretension on the masks, in order to improve the robustness of display quality against vibration or impact. High temperature assembly process subsequent to pretensioning, however, degenerates creep resistance of mask material, and common mask may become susceptible to undesirable elongation due to creep. Once tensile stress becomes high enough to induce creep deformation, pretension is substantially loosened. In this study, tension mask assembly is modeled as a combined structure of beams and wire array, and a numerical simulation is attempted for pretensioning followed by high temperature process. Based on a model study, creep occurrence is found to be probable and its adverse influence is quantified. As fur maintaining high tensile force, simply increasing pretension does not seem to be helpful. Instead, the structure of frame needs to be modified somehow, or material for mask needs to be selected properly.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.06a
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• pp.61-67
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• 2006

Optimization is carried out to determine process parameters which reduce the amount of springback and improve shape accuracy of a deep drawn product in sheet metal forming process. The study uses the amount of stress deviation along the thickness direction in the deep drawn product as an indicator of springback instead of springback simulation. The scheme incorporates with an explicit elasto-plastic finite element method for calculation of the final shape and the stress deviation. The optimization method adopts the response surface method in order to seek for the optimum condition of the draw-bead force. The present scheme is applied to the design of draw-bead force in a front side member formed with advanced high strength steel (AHSS) sheets of DP60. Results show that design of process parameter is well performed to decrease the stress deviation through the thickness and to reduce the amount of springback. The present analysis provides a guideline in a design stage for controlling the springback based on the finite element simulation of the complicated parts.

• Transactions of Materials Processing
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• v.18 no.8
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• pp.601-606
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• 2009

High strength steels are widely used for lightweight automobile parts and the control of springback is very important in sheet metal forming. The object of this study is to develop the forming process for stair type side sill made of high strength steel, DP780. Stair type side sill with local formed area and geometry change area can improve stiffness and design freedom but there are few studies for forming process. The forming technology considered in this paper is form type process, which has many advantages for forming of high strength steel compared with draw type process. Finite element analysis is carried out to predict formability and springback. It is shown that angle calibration of die is essential for reducing springback, and local forming involving bead is effective to control springback also. The effectiveness of local forming and angle calibration is verified by experimental.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.96-101
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• 2003

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.