• Journal of the Korean Society of Food Science and Nutrition
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• v.19 no.6
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• pp.625-635
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• 1990

The purpose of this study was focused on investigation of biochemical properties of amylases in germinating corn(Zea mays L.) the amylase(I), (II) and (III) from germinating corn seeds were partially purified by ammonium sulfate precipitation, DEAE-Sephadex A-50 ion exchange column chromatography and Sephadex G-100 gel filtration. The last step was effective for separation of the corn amylases to a homogeneous slate. the purified amylase(I) was identified as a kind of $\alpha$-amylase from the fact that 5％ starch solution was hydrolysed into mainly maltose and maltotetrose by it, and amylase(II) and amylase(III) were enzymes producing maltotetrose as main product. The molecular weight and specific activity of the amylase(I), (II) and (III) were determined to be 54,000 and 70.47 unit/mg, 39,000 and 62.98 unit/mg, and 51,000 and 80.39 unit/mg, respectively. It showed a tendency to increase the amylases activities in presence of Ba, Ca, Co and Fe groups, but inhibits in that of Ag, Sn, Hg and Zn groups, and amylase(I), (II) and (III) remained stable at pH 5-6 and 2$0^{\circ}C$ for 40 days in containing of 1 mM CaCl$_2$. The optimum pH and optimum temperatures were pH 6, pH 5 and pH 6 and 35$^{\circ}C$, 55$^{\circ}C$ and 55$^{\circ}C$, respectively. These results suggest that the amylase(I), (II) and (III) were different amylases.

• Membrane and Water Treatment
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• v.9 no.4
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• pp.211-220
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• 2018

Incorporating nano-materials in thin-film composite (TFC) membranes has been considered to be an approach to achieve higher membrane performance in various water treatment processes. This study investigated the rejection efficiency of three target compounds, i.e., reserpine, norfloxacin and tetracycline hydrochloride, by TFC membranes with different graphene oxide proportions. Graphene oxide (GO) was incorporated into the polyamide active layer of a TFC membrane via an interfacial polymerization (IP) reaction. The TFC membranes were characterized with FTIR, FE-SEM, AFM; in addition, the water contact angle measurements as well as the permeation and separation performance were evaluated. The prepared GO-TFC membranes exhibited a much higher flux ($3.11{\pm}0.04L/m2{\cdot}h{\cdot}bar$) than the pristine TFC membranes ($2.12{\pm}0.05L/m2{\cdot}h{\cdot}bar$) without sacrificing their foulant rejection abilities. At the same time, the GO-modified membrane appeared to be less sensitive to pH changes than the pure TFC membrane. A significant improvement in the anti-fouling property of the membrane was observed, which was ascribed to the favorable change in the membrane's hydrophilicity, surface morphology and surface charge through the addition of an appropriate amount of GO. This study predominantly improved the understanding of the different PA/GO membranes and outlined improved industrial applications of such membranes in the future.

• Resources Recycling
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• v.27 no.3
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• pp.8-15
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• 2018

Solvent extraction behavior of light rare earth elements (Pr, Nd) and medium rare erath elements (Tb, Dy) in the HCl-PC88A-kerosene extraction system was investigated in order to separate high-purity light rare earths (Pr, Nd) and medium rare earths (Tb, Dy) in the mixed rare earth chloride solution. In the batch test step, it was confirmed that the separation efficiency was good when the extractant concentration (PC88A) was 0.5 M, the equilibrium pH after extraction was 0.8 to 1.0 (initial pH 1.3 of the feed), the concentrations of hydrochloric acid in scrubbing solution was set as 0.1 M, the concentrations of hydrochloric acid in stripping solution was set as 2.0 M or more. Based on the experimental data obtained from the batch test, the mixer-settler was composed as follows; 4 stages of extraction, 8 stages of scrubbing, 4 stages of stripping, and 3 stages of pickling organic solution. The Mixer-settler was operated for 180 hours, and the operating conditions were continuously adjusted to obtain the high-purity light/medium rare earths. Finally, the purity of light (Pr, Nd) and medium rare earth elements (Tb, Dy) was reached as 3 N class.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.11-11
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• 2009

종래의 산업폐수 처리기술로는 중금속 함유 폐수에 수용성의 금속염을 첨가하여 가성소다 혹은 소석회를 이용하여 pH를 조정하고 고분자 응집제를 첨가하여 금속의 수산화물을 생성시켜 이를 부상 혹은 침전시켜 Sludge화하여 제거하는 방법이 주로 사용되고 있다. 그 외 질소, 인, 유기물이 함유된 폐수의 경우에는 Biological Oxidation Techniques, 활성탄 흡착방식이 주로 채택되고 있다.[1-3] 이러한 폐수처리기술은 화학약품 사용량이 과다하고 이는 Sludge 생성량을 증대하고 2차 폐수처리가 필요로 하는 경우가 많고, 처리장이 면적이 넓어야 하고 대용량의 Sludge 제거창치가 필요하여 고비용의 처리공정으로 문제점을 가지고 있다.[2-3] 이에 본 연구에서는 이러한 기존 기술의 문제점을 보완할 수 있고 기존 기술로는 완벽하게 처리하기 곤란한 악성 폐수들에 대한 새로운 고도처리기술로 초전도 마그네트를 이용한 고구배 자기분리기술에 대한 기초연구를 하였다. 본 연구에서 사용한 고구배 자기분리 시스템은 무헬륨 전도냉각방식으로 자기분리를 위해 사용한 필터는 SUS 430 재질의 메쉬 형태로 제작하여 실험하였다. 또한, 자기분리 처리를 위한 전처리 공정으로는 응집제를 첨가하여 자기분리 효율을 높이고자 하였다. 자기분리 처리대상수로는 포항제철에 압연 강판에 사용되는 냉각수를 대상으로 자기분리 처리에 대한 효과를 실험하였다. 또한, 자기분리에 대한 특성을 평가하기 위해 강자성의 $Fe_3O_4$ 미세자성분말을 첨가하여 처리수내의 들어있는 유기물질에 대해 자기분리 자장 및 유속에 대한 처리효율을 미치는 영향을 조사하였다. 자기분리 처리는 1~6 Tesla에서 자기필터는 디스크 형태로 다층으로 연속적으로 적층하였으며, 처리유속은 1~4 l/min으로 하였다. 고농도인 처리폐수를 자가분리 인가 자장에 따라 처리하여 고농도에서는 70%, 저농도에서는 98 %까지 처리되었다. 또한, 자기분리용 필터는 SUS 430 재질의 mesh 망을 사용하였으며 인가자장 및 유속변화에 대한 실험 결과 탁도 및 농도는 필터 크기의 영향은 거의 차이가 없었으며 단지 인가자장 및 유속에 따라서 지수적으로 감소하였다. 자기분리된 용액 내 $Fe_3O_4$ 입도 분석 결과 자기분리 이전에 분포하던 $10\sim20\;{\mu}m$의 입자는 거의 제거되었으며 2 ${\mu}m$ 이하의 입자들은 실험 횟수에 따라 점점 직경이 작은 쪽으로 분포가 좁아졌으며, 마그네타이트의 자화율을 분석한 결과 약 0.8 Tesla에서 포화 되었으며 처리수의 탁도 및 농도가 자장에 따라 감소하는 것으 알 수 있었다.

• Journal of Environmental Health Sciences
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• v.44 no.1
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• pp.55-62
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• 2018

Objectives: This study set out to measure the heavy metal concentrations in waste water produced in the casting pickling process at dental technical laboratories and examine the actual state of its treatment. Methods:The investigator measured the concentrations of each heavy metal at 55 dental technical laboratories using an inductively coupled plasma optical emission system. Results: The annual usage of electrolytes was under 10 L in 50 (90.9%), and was 10L or more in five (9.1%) laboratories. Among the laboratories, 15 (27.3%) commissioned the treatment of waste,12 (21.8%) treated the waste with general sewage,and 28 (50.9%) treated the waste in aseptic tank. The arithmetic $mean{\pm}standard$ deviation and the geometric mean of chrome(Cr) were $75.3{\pm}50.9$ and 58.3 mg/L; those of cobalt (Co) were $112.3{\pm}106.7$ and 66.1 mg/L; those of nickel (Ni) were $62.9{\pm}83.5$ and 8.9 mg/L; those of molybdenum (Mo) were $17.1{\pm}13.4$ and 12.0 mg/L; those of iron (Fe) were $31.5{\pm}44.1$ and 6.2 mg/L; those of lead (Pb) were $0.3{\pm}0.3$ and 0.3 mg/L; those of beryllium (Be) were $3.6{\pm}3.6$ and 2.0 mg/L. The hydrogen ion concentration was under pH 2 across all the samples. Conclusions: The findings show that the dental technical laboratories were not doing well with the separation, storage, collection, and treatment of the electrolytes they discarded, and that most of the electrolytes were introduced through the general sewage or aseptic tank. The causes of this include alack of perception among the practitioners at dental technical laboratories and contracted companies avoiding collection for economic reasons. There is a need for education to improve the perceptions of waste water treatment among the practitioners at dental technical laboratories. Environment-related departments should be stricter with legal applications in the central and local governments. It is also required to provide proper management of commissioned treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.159-164
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• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.