• Archives of Plastic Surgery
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• v.49 no.5
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• pp.648-651
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• 2022

Nasal dermoid cysts are rare congenital anomalies that affect one in 20,000 to one in 40,000 individuals. Herein, we report a case of an initially misdiagnosed nasal dermoid cyst with intracranial extension. Among nasal dermoids, the lesion of the nasal tip is considered uncommon. Therefore, this should always be considered as a differential diagnosis of midline nasal masses, and a proper diagnostic approach should be taken.

• Journal of Information Display
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• v.2 no.3
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• The Journal of the Acoustical Society of Korea
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• v.16 no.3
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• pp.106-113
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• 1997

A 3V CMOS continuous-time fully-balanced integrator for low-voltage analog-digital mixed-mode signal processing is designed in this paper. The basic architecture of the designed fully-balanced integrator is complementary circuit which is composed of NMOS and PMOS transistor. And this complementary circuit can extend transconductance of an integrator. So. the unity gain frequency, pole and zero of integrator are increased by the extended transconductance. The SPICE simulation and small signal analysis results show that the UGF, pole and zero of the integrator is increased larger than those of the compared integrtors. The three-pole active low-pass filter is designed as a application circuit of the fully-balanced integrator, using 0.83V CMOS processing parameter.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.50 no.1
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• pp.77-84
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• 2017

Three species of pufferfishes (family Tetraodontidae) were examined to determine their morphological characteristics based on meristics, morphometrics, olfactory organs, and lateral line systems of specimens collected from the Chennai Fish Market in Tamil Nadu, India, in December 2016. The three species, which are all previously unreported in Korea, are Chelonodon patoca (Hamilton, 1822), Lagocephalus spadiceus (Richardson, 1845), and Arothron immaculatus (Bloch and Schneider, 1801). For nostril shape, fishes of the genus Lagocephalus have two nostrils, while Arothron and Chelonodon have none. Fishes of the genera Lagocephalus and Arothron have a single well-developed lateral line on the body, while Chelonodon fishes have two lateral lines that merge on the caudal peduncle.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.127-127
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• 2018

열전변환기술은 폐열을 전기로 변환하는 제벡효과를 이용한 기술이다. 열전변환효율은 재료의 성능에 따라 결정되며 성능지수 $ZT=S^2{\sigma}T/k$로 표현할 수 있다. 여기서 S는 제벡계수, ${\sigma}$는 전기전도도, k는 열전도도, T는 절대온도이다. GeTe계 열전재료는 $200{\sim}500^{\circ}C$에서 쓰이는 중온용 열전재료이다. 높은 성능지수를 가지기 위해서는 파워펙터($S2{\sigma}$)의 향상과 열전도도의 감소가 필요하다. GeTe계 화합물은 Ge의 공공 때문에 높은 캐리어 농도를 가지게 되고, 이로 인해 낮은 제벡계수 값과 높은 열전도도를 가지게 된다. 따라서 GeTe계 화합물의 성능 향상을 위해서는 캐리어농도 제어가 필수적이다. TEM을 통하여 GeTe를 관찰하면 밝고 어두운 콘트라스트들이 형성되어 있는 헤링본구조를 확인 할 수 있다. 콘트라스트를 보여주는 작은 평행사변형 하나는 헤링본구조의 가장 작은 단위인 도메인이며 이 도메인들이 특정한 방향으로 배열되어 콜로니를 형성하고 콜로니들이 특정한 방향으로 배열되어 헤링본구조를 이룬다. 헤링본의 폭과 길이를 제어 할 수 있다면 GeTe계 화합물의 열전특성 향상에 영향을 미칠 수 있을 것으로 예상된다. 따라서 본 연구에서는 GeTe계 화합물내에 도핑원소 첨가를 통한 캐리어 농도제어와 도핑원소 첨가에 따른 헤링본구조의 변화에 관하여 연구하였다.

• Korean Journal of Medicinal Crop Science
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• v.22 no.6
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• pp.449-456
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• 2014

Anti-inflammatory activity of the extracts of ginseng berry (GBE) was investigated through the evaluation of its inhibitory effect on the production of inflammatory meditator, nitric oxide(NO), tumor necrocis factor-alpha (TNF-${\alpha}$), interleukin-6 (IL-6) in LPS-induced RAW264.7 macrophage cells. GBE was fractionated using n-hexane, chloroform, ethylacetate, buthanol and $H_2O$, sequentially. RAW264.7 cells were induced $100ng/m{\ell}$ of lipopolysaccharide (LPS) and treated with 0, 1.6, 8, 40 and $200{\mu}g/m{\ell}$ of GBE fractions. LPS-induced NO production on all of GBE fractions was inhibited with increasing added concentration of GBE fractions. Chloroform fraction of GBE was the most effective in inhibiting LPS-induced TNF-${\alpha}$ production. Hexane, chloroform and $H_2O$ fractions of GBE exhibit strong inhibition LPS-induced IL-6 production. Especially, $H_2O$ fractions of GBE was the most effective in inhibiting LPD-induced IL-6 production without significant cytotoxicity in RAW264.7 cells, and reduced the activation of mitogen-activated protein kinases (MAPK) and IkB phosphorylation. These results indicate that $H_2O$ fractions of GBE exhibits strong anti-inflammatory effects by inhibition of NF-kB by inhibition of p-38 on MAPK and IkB phosphorylation.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1182-1187
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• 2013

Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.5
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• pp.639-642
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• 2013

In this paper, proposed NED(nuclear event detectors) for detection of a transient radiation. Nuclear event detector was blocked of power temporary for defence of critical damage at a electric device when a induced transient radiation. Conventional NED consist of BJT, resistors and capacitors. The NED supply voltage of 5V and MCM(Multi Chip Module) structures. The proposed NED were designed for low supply voltage using 0.18um CMOS process. The response time of proposed NED was 34.8ns. In addition, pulse radiation experiments using a electron beam accelerator, the output signal has occurred.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).