• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.287-287
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• 2007

• Electrical & Electronic Materials
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• v.20 no.9
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• pp.35-41
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.189-189
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• 2006

• Proceedings of the Ginseng society Conference
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• 2005.11a
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• pp.19-31
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• 2005

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2016.05a
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• pp.29-30
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• 2016

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.158-158
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.95.2-95
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.481-481
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• 2011

이 논문은 세라믹 노즐(내경: 20 um)을 제작하여 새로운 프린팅 방식인 정전기수력학방식을 이용하여 유리기판위에 직경 30 um의 ZnO seed dot를 패턴하였다. 정전기수력학은 기존의 프린팅 방식과 달리 전기장으로 유도된 노즐을 이용하여 액적을 토출시키는 새로운 프린팅 방법이다. 패턴된 ZnO seed는 열처리후 수열합성법을 이용하여 성장시켰다. 같은 방법으로 잉크젯 프린팅을 이용하여 ZnO seed 패턴 후 열처리하여 수열합성을 이용하여 성장시켰다. 잉크젯 프린팅 방식을 이용하여 성장된 ZnO nanowire는 위성 액적이 떨어져 ZnO seed dot 주변에 ZnO nanowire가 성장하였다. 반면, 정전기수력학 프린팅 방식을 이용하여 성장된 ZnO nanowires는 ZnO seed 패턴 중앙에 집중되어 ZnO nanowire가 성장하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.79-79
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• 2009

Samples of Ta-doped in $In_2O_3-ZnO-SnO_2$(IZTO) with a doping level up to 4wt% were sintered at $1600^{\circ}C$ in $O_2$. The crystal phase of the samples was identified by an X-ray diffraction experiment. apparent density and porosity with sintered temperature from $1500^{\circ}C$ to $1640^{\circ}C$ are mesured by archimedes method. For each sample, the specific resistivity was determined. samples of sintered at $1600^{\circ}C$ had the highest density and lowest porousity and The Ta 0.25-wt%-doped IZTO ceramics had the lowest resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.95-95
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• 2009

Lead-free $(K_{0.5}Na_{0.5})(Nb_{0.96}Sb_{0.04)O_3$ + 1.2 mol% $K_4CuNb_8O_{23}$ + x mol% $Fe_2O_3$ ceramics were manufactured by a conventional solid state reaction method. And then, their piezoelectric and dielectric properties were investigated. At the 0.2 mol% $Fe_2O_3$ doped ceramics, the values of Kp=0.436 and Qm=696.36 were obtained, respectively, which were suitable for piezoelectric transformer application.