• 제목/요약/키워드: Sensor structure design

검색결과 542건 처리시간 0.029초

비행시험시스템용 다중센서 자료융합필터 설계 (Design of Multi-Sensor Data Fusion Filter for a Flight Test System)

  • 이용재;이자성
    • 대한전기학회논문지:시스템및제어부문D
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    • 제55권9호
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    • pp.414-419
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    • 2006
  • This paper presents a design of a multi-sensor data fusion filter for a Flight Test System. The multi-sensor data consist of positional information of the target from radars and a telemetry system. The data fusion filter has a structure of a federated Kalman filter and is based on the Singer dynamic target model. It consists of dedicated local filter for each sensor, generally operating in parallel, plus a master fusion filter. A fault detection and correction algorithms are included in the local filter for treating bad measurements and sensor faults. The data fusion is carried out in the fusion filter by using maximum likelihood estimation algorithm. The performance of the designed fusion filter is verified by using both simulation data and real data.

센서 시스템을 위한 저전력 고신뢰의 비동기 디지털 회로 설계 (Low Power Reliable Asynchronous Digital Circuit Design for Sensor System)

  • 안지혁;김경기
    • 센서학회지
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    • 제26권3호
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    • pp.209-213
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    • 2017
  • The delay-insensitive Null Convention Logic (NCL) asynchronous design as one of innovative asynchronous logic design methodologies has many advantages of inherent robustness, power consumption, and easy design reuses. However, transistor-level structures of conventional NCL gate cells have weakness of high area overhead and high power consumption. This paper proposes a new NCL gate based on power gating structure. The proposed $4{\times}4$ NCL multiplier based on power gating structure is compared to the conventional NCL $4{\times}4$ multiplier and MTNCL(Multi-Threshold NCL) $4{\times}4$ multiplier in terms of speed, power consumption, energy and size using PTM 45 nm technology.

A new approach to deal with sensor errors in structural controls with MR damper

  • Wang, Han;Li, Luyu;Song, Gangbing;Dabney, James B.;Harman, Thomas L.
    • Smart Structures and Systems
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    • 제16권2호
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    • pp.329-345
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    • 2015
  • As commonly known, sensor errors and faulty signals may potentially lead structures in vibration to catastrophic failures. This paper presents a new approach to deal with sensor errors/faults in vibration control of structures by using the Fault detection and isolation (FDI) technique. To demonstrate the effectiveness of the approach, a space truss structure with semi-active devices such as Magneto-Rheological (MR) damper is used as an example. To address the problem, a Linear Matrix Inequality (LMI) based fixed-order $H_{\infty}$ FDI filter is introduced and designed. Modeling errors are treated as uncertainties in the FDI filter design to verify the robustness of the proposed FDI filter. Furthermore, an innovative Fuzzy Fault Tolerant Controller (FFTC) has been developed for this space truss structure model to preserve the pre-specified performance in the presence of sensor errors or faults. Simulation results have demonstrated that the proposed FDI filter is capable of detecting and isolating sensor errors/faults and actuator faults e.g., accelerometers and MR dampers, and the proposed FFTC can maintain the structural vibration suppression in faulty conditions.

A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

  • Han, Sang-Wook;Kim, Seong-Jin;Yoon, Eui-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.102-106
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    • 2005
  • A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

Design of Super-junction TMOSFET with Embedded Temperature Sensor

  • Lho, Young Hwan
    • 전기전자학회논문지
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    • 제19권2호
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    • pp.232-236
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    • 2015
  • Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

고충격 미소가속도계의 압저항-구조 연성해석 및 최적설계 (Piezoresistive-Structural Coupled-Field Analysis and Optimal Design for a High Impact Microaccelerometer)

  • 한정삼;권순재;고종수;한기호;박효환;이장우
    • 한국군사과학기술학회지
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    • 제14권1호
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    • pp.132-138
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    • 2011
  • A micromachined silicon accelerometer capable of surviving and detecting very high accelerations(up to 200,000 times the gravitational acceleration) is necessary for a high impact accelerometer for earth-penetration weapons applications. We adopted as a reference model a piezoresistive type silicon micromachined high-shock accelerometer with a bonded hinge structure and performed structural analyses such as stress, modal, and transient dynamic responses and sensor sensitivity simulation for the selected device using piezoresistive-structural coupled-field analysis. In addition, structural optimization was introduced to improve the performances of the accelerometer against the initial design of the reference model. The design objective here was to maximize the sensor sensitivity subject to a set of design constraints on the impact endurance of the structure, dynamic characteristics, the fundamental frequency and the transverse sensitivities by changing the dimensions of the width, sensing beams, and hinges which have significant effects on the performances. Through the optimization, we could increase the sensor sensitivity by more than 70% from the initial value of $0.267{\mu}V/G$ satisfying all the imposed design constraints. The suggested simulation and optimization have been proved very successful to design high impact microaccelerometers and therefore can be easily applied to develop and improve other piezoresistive type sensors and actuators.

브러그만 유효 굴절 박막에서의 표면 플라즈몬 공명 센서 설계 (Design of Surface Plasmon Resonance Sensor with Bruggeman Effective Medium Layers)

  • 배영규;이승열
    • 센서학회지
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    • 제29권2호
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    • pp.118-122
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    • 2020
  • This paper proposes a specific sensor-design strategy and the possibility of improving the sensing performance, which can be obtained by replacing part of the existing plasmonic sensor based on the Kretschmann configuration method with an effective refractive-index layer. By replacing the metal layer with an effective refractive-index layer composed of gold and the material to be sensed, an improvement in the detection performance, accompanied by an increase in the sensed incident angle, is observed, and the gold-composition ratio that demonstrates the best result is presented. Subsequently, an increase in the sensed incident angle generated in the previous step can be suppressed by randomly etching a portion of the prism adjacent to the metal layer in a sub-wavelength scale. Finally, this study analyzes the optimization of the metal-layer thickness in a given sensor structure. An effective refractive thin-film surface plasmon resonance sensor design that can achieve optimal sensing performance is then proposed.

Battery-free slotted patch antenna sensor for wireless strain and crack monitoring

  • Yi, Xiaohua;Cho, Chunhee;Wang, Yang;Tentzeris, Manos M.
    • Smart Structures and Systems
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    • 제18권6호
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    • pp.1217-1231
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    • 2016
  • In this research, a slotted patch antenna sensor is designed for wireless strain and crack sensing. An off-the-shelf RFID (radiofrequency identification) chip is adopted in the antenna sensor design for signal modulation. The operation power of the RFID chip is captured from wireless reader interrogation signal, so the sensor operation is completely battery-free (passive) and wireless. For strain and crack sensing of a structure, the antenna sensor is bonded on the structure surface like a regular strain gage. Since the antenna resonance frequency is directly related with antenna dimension, which deforms when strain occurs on the structural surface, the deformation/strain can be correlated with antenna resonance frequency shift measured by an RFID reader. The slotted patch antenna sensor performance is first evaluated through mechanics-electromagnetics coupled simulation. Extensive experiments are then conducted to validate the antenna sensor performance, including tensile and compressive strain sensing, wireless interrogation range, and fatigue crack sensing.

유속 감지를 위한 실리콘 유량센서의 설계 및 제작 (Design and Fabrication of Silicon Flow Sensor For Detecting Air Flow)

  • 이영주;전국진;부종욱;김성태
    • 전자공학회논문지A
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    • 제31A권5호
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    • pp.113-120
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    • 1994
  • Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

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