• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.106-108
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• 2005

The instrumented fuel irradiation test at a research reactor is needed to evaluate the performance of the developed nuclear fuel. The fuel elements can be designed to measure the center line temperature of fuel pellets during the irradiation test by using temperature sensor. The thermal sensor was composed of thermocouple and sensor sheath. Micro-laser welding technology was adopted to seal between seal tube and sensor sheath with thickness of 0.15 mm. The soundness of welding area has to be confirmed to prevent fission gas of the fuel from leaking out of the element during the fuel irradiation test. In this study, fundamental data for micro-laser welding technology was proposed to seal temperature sensor sheath of the instrumented fuel element. And, micro-laser welding for dissimilar metals between sensor sheath and seal tube was characterized by investigating welding conditions. Moreover, the micro-laser welding technology is closely related to advanced industry. It is expected that the laser material processing technology will be adopted to various a pplications in the industry.

• 센서학회지
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• 제26권3호
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• pp.168-172
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• 2017

A nondispersive infrared (NDIR) ethanol gas sensor was prototyped with ASIC implemented thermopile sensor, which included a temperature sensor and two ellipsoidal waveguide structures. The temperature dependency of the two ethanol sensors (with partially blocked and intact structures) has been characterized. The two ethanol gas sensors showed linear output voltages initially when varying the ambient temperature from 253 K to 333 K. The slope of the temperature sensor presented a constant value of 15 mV/K. After temperature compensation, the ethanol gas sensor estimated ethanol concentrations with larger errors of 20 to 25% below 200 ppm. However, the estimation errors were reduced to between -10 and +1 % from 253 K to 333 K above 200 ppm ethanol gas concentration in this research.

• 열처리공학회지
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• 제24권3호
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• 전기학회논문지
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• 제58권7호
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• pp.1450-1455
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• 2009

Assumed that an IPTV camera system is to be used as an ad-hoc sensor for the surveillance and diagnostics of safety-critical equipments installed in the in-containment building of the nuclear power plant, an major problem is the presence of high dose-rate gamma irradiation fields inside the one. In order to uses an IPTV camera in such intense gamma radiation environment of the in-containment building, the radiation-weakened devices including a CCD imaging sensor, FPGA, ASIC and microprocessors are to be properly shielded from high dose-rate gamma radiation using the high-density material, lead or tungsten. But the passive elements such as mirror, lens and window, which are placed in the optical path of the CCD imaging sensor, are exposed to a high dose-rate gamma ray source directly. So, the gamma-ray irradiation characteristics of the passive elements, is needed to test. A CCD camera lens, made of glass material, have been gamma irradiated at the dose rate of 4.2 kGy/h during an hour up to a total dose of 4 kGy. The radiation induced color-center in the glass lens is observed. The degradation performance of the gamma irradiated lens is explained using an color component analysis.

• 센서학회지
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• 제18권1호
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• pp.48-53
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• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• 대한기계학회논문집A
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• 제39권1호
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• pp.105-109
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• 2015

고출력 레이저에 의한 영상 센서의 손상 분석 연구를 수행하였다. 고출력 레이저에 의한 금속의 손상에 관한 연구는 많이 이루어져 있지만, 상대적으로 고출력 레이저에 취약한 영상 시스템의 손상 연구는 미비한 상태이다. 본 논문에서는 CMOS 영상 센서에 고출력 레이저가 조사 되었을 때, 영상 센서가 받는 손상에 대해 실험적으로 분석하였다. 고출력 레이저 소스로는 근적외선대역의 연속발진 광섬유 레이저를 사용하였으며, 레이저 세기와 조사시간에 따른 CMOS 영상 센서의 영구적 손상 및 영상 품질을 분석하였다. 그 결과 조사시간과 레이저세기가 증가함에 따라 먼저 색상 손상이 나타나고 이후 작동불능 상태가 되었으며, 이러한 손상은 조사시간보다 레이저 세기에 더 큰 영향을 받는 것으로 나타났다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1291-1292
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• 2007

Recently, there were many researches for efficiency improvement of DSC. Among of these works, research of surface treatment is still a prerequisite for electron diffusion, light-harvesting and surface state of DSC.[1] Using of the surface treatment, it can be raise up porosity of $TiO_2$ nano-crystalline structure on photo-electrode. There are chemical, physical, electrical and optical methods which raise up its porosity. In this paper, we have designed and manufactured MOPA-type ultrasonic circuit (100W, frequency and duty variable). Manufactured ultrasonic circuit to use to force cavity density and power into $TiO_2$ paste. Then, we have optimized forcing time, frequency and duty of ultrasonic irradiation for surface treatment of photo-electrode of DSC. In I-V characteristic test of DSC, ultrasonic and thermal treated DSC shows 19% improved its efficiency against monolithic DSC. And it shows stability of light-harvesting from drastically change of light irradiation test.

• Journal of Welding and Joining
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• 제23권6호
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• pp.43-48
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• 2005

This work was carried out to obtain sound welds and to select a most suitable binary metal joint among three different dissimilar binary metal combinations such as Zr-4/Ta, Mo/Ta and Ti/Ta(seal tube/sensor sheath) joints fur the instrumented nuclear fuel irradiation test. To do this, Taguchi experimental method was employed to optimize the experimental data. In addition, metallography, micro-focus x-ray radiography and hardness test were conducted to examine the welds. From the weld bead appearance, penetration depth and bead width as well as weld defects standpoint, Zr-4/Ta joint is suggested for the circumferential joining between a seal tube and a sensor sheath. The optimized welding parameters based on Zr-4/Ta joint are suggested as well.

• 센서학회지
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• 제28권3호
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Nuclear Engineering and Technology
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• 제53권1호
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• pp.142-147
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• 2021

Hydrogen peroxide is a radiolysis product of water formed under gamma-irradiation; therefore, its reliable detection is crucial in the nuclear industry for spent fuel management and coolant chemistry. This study proposes an electrochemical sensor for hydrogen peroxide detection. Cysteamine (CYST), gold nanoparticles (GNPs), and horseradish peroxidase (HRP) were used in the modification of a gold electrode for fabricating Au/CYST/GNP/HRP sensor. Each modification step of the electrode was investigated through electrochemical and physical methods. The sensor exhibited strong sensitivity and stability for the detection and measurement of hydrogen peroxide with a linear range of 1-9 mM. In addition, the Michaelis-Menten kinetic equation was applied to predict the reaction curve, and a quantitative method to define the dynamic range is suggested. The sensor is highly sensitive to H₂O₂ and can be applied as an electrochemical H₂O₂-sensor in the nuclear industry.