• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.4
• /
• pp.413-417
• /
• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Journal of the Korean Institute of Gas
• /
• v.27 no.2
• /
• pp.79-85
• /
• 2023

Recently, in the semiconductor process, large companies are seeking process changes from memory semiconductors to the foundry due to the increase in demand due to the 4th industry. industry is expanding. The characteristics of special gases and precursors, which are raw materials used to produce these semiconductor chips, are toxic, pyrophoric, inflammable, and corrosive. These semiconductor raw materials are operated in a closed system and do not leak to the outside during normal times, but when leaked, they spread to the inside of the gas box, and when proper ventilation is not provided inside the gas box, they spread to the outside, causing fires, explosions, or toxic substances. It can lead to major accidents such as leakage. Recently, there have been cases of accidents in which hazardous materials leaked from the closed system of the semi conductor process and spread to the inside and outside of the gas box. . In this study, we propose preventive measures based on the case of an accident in which raw material leaked from the VCR fitting, which is the connection part of the semiconductor raw material transfer pipe, and spread to the outside of the gas box.

• The Journal of the Convergence on Culture Technology
• /
• v.9 no.2
• /
• pp.553-560
• /
• 2023

The study is about domestic industries following the migration of hubs (innovation, manufacturing) to other countries and the hub-oriented US industries (batteries, semiconductors, electric vehicles). Additionally, the ongoing trade tensions between the United States and China may have also played a role in companies moving their operations to the United States. The result of such a move could potentially include job creation in the United States, as well as increased investment in the U.S. manufacturing sector. However, it is also possible that there could be negative consequences, such as higher prices for consumers or disruptions to supply chains during the relocation process. However, such IRA, Chips Act scenario would likely also have negative consequences (Inflation in the home country) for the countries whose industries moved to the US, as they would lose jobs, investment, and possibly face economic difficulties as a result. As the result of the empirical analysis of the export scale of Korea and the United States, changes in the movement of global supply hubs are related to factors such as geopolitical price increases and consumption declines. In order to respond to these changes, this paper emphasizes the need to prevent the result of de-advantage by moving the production area of the scale.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.2
• /
• pp.45-53
• /
• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.4
• /
• pp.61-68
• /
• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.6
• /
• pp.255-260
• /
• 2023

As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe₂ semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe₂ was synthesized using thermal chemical vapor deposition, and afterward, WSe₂ FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe₂ crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe₂ surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.3
• /
• pp.332-336
• /
• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• Journal of the Korean institute of surface engineering
• /
• v.57 no.1
• /
• pp.38-48
• /
• 2024

We fabricated In₂O₃ zig-zag nanocolumns(ZZNCs) by oblique angle deposition method based on e-beam evaporator for highly sensitive and selective CH₃COCH₃ sensor. Our results indicate that as the ZZNCs layer stacks, the gas response also increases. In comparison to thin films, ZZNCs at 5 layer show a 117-fold enhancement in gas response and a rapid response time (~2 s). When measured with various gases, it showed a high selectivity towards acetone. Under conditions of 80% R.H., exposure to CH₃COCH₃ gas theoretically indicated a detection limit of 1.2 part-per-billion(ppb). These results suggest the potential of In₂O₃ ZZNCs as a breath analyzer for the diagnosis of diabetes.

• Journal of Sensor Science and Technology
• /
• v.33 no.1
• /
• pp.40-47
• /
• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.

• Korean Journal of Agricultural Science
• /
• v.50 no.4
• /
• pp.809-815
• /
• 2023

This study was conducted to find out the correlation between meat quality and muscle fat ratio in pork part meat (pork belly and shoulder butt) using CT (computed tomography) imaging technique. After 24 hours from slaughter, pork loin and belly were individually prepared from the left semiconductors of 26 pigs for CT measurement. The image obtained from CT scans was checked through the picture archiving and communications system (PACS). The volume of muscle and fat in the pork belly and shoulder butt of cross-sectional images taken by CT was estimated using Vitrea workstation version 7. This assemblage was further processed through Vitrea post-processing software to automatically calculate the volumes (Fig. 1). The volumes were measured in milliliters (mL). In addition to volume calculation, a three-dimensional reconstruction of the organ under consideration was generated. Pearson's correlation coefficient was analyzed to evaluate the relationship by region (pork belly, pork shoulder butt), and statistical processing was performed using GraphPad Prism 8. The muscle-fat ratios of pork belly taken by CT was 1 : 0.86, while that of pork shoulder butt was 1 : 0.37. As a result of CT analysis of the correlation coefficient between pork belly and shoulder butt compared to the muscle-fat ratio, the correlation coefficient was 0.5679 (R² = 0.3295, p < 0.01). CT imaging provided very good estimates of muscle contents in cuts and in the whole carcass.