• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.41-41
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• 2007

For use in spintronic materials, dilute magnetic semiconductors (DMS) are under consideration as spin injectors for spintronic devices[l]. $TiO_2$-based DMS doped by a cobalt, iron, and manganese et al. was recently reported to show ferromagnetic properties, even at temperatures above 300K and the magnetic ordering was explained in terms of carrier-induced ferromagnetism, as observed for a III-V based DMS. An anomalous Hall effect (AHE) and co-occurance of superparamagnetism in reduced Co-doped rutile $TiO_{2-\delta}$ films have also been reported[2]. Metal segregation in the reduced metal-doped rutile $TiO_2-\delta$ films still remains as problems to solve the intrinsic DMS properties. Superlattice films have been proposed to get dilute magnetic semiconductor (DMS) with intrinsicroom-temperature ferromagnetism. For a $TiO_2$-based DMS superlattice structure, each layer was alternately doped by two different transition metals (Fe and Mn) and deposited to a thickness of approximately $2.7\;{\AA}$ on r-$Al_2O_3$(1102) substrates by pulsed laser deposition. The r-$Al_2O_3$(1102) substrates with atomic steps and terrace surface were obtained by thermal annealing. Samples of $Ti_{0.94}Fe_{0.06}O_2$(TiFeO), $Ti_{0.94}Mn_{0.06}O_2$(TiMnO), and $Ti_{0.94}(Fe_{0.03}Mn_{0.03})O_2$ show a low remanent magnetization and coercive field, as well as superparamagnetic features at room temperature. On the other hand, superlattice films (TiFeO/TiMnO) show a high remanent magnetization and coercive field. An anomalous Hall effect in superlattice films exhibits hysisteresis loops with coercivities corresponding to those in the ferromagnetic Hysteresis loops. The superlattice films composed of alternating layers of $Ti_{0.94}Fe_{0.06}O_2$ and $Ti_{0.94}Mn_{0.06}O_2$ exhibit intrinsic ferromagnetic properties for dilute magnetic semiconductor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• Membrane Journal
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• v.25 no.6
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• pp.530-537
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• 2015

Photovoltaic (PV) modules are environmentally energy conversion devices to generate electricity via photovoltaic effect of semiconductors from solar energy. One of key elements in PV modules is "Backsheet," a multilayered barrier film, which determines their lifetime and energy conversion efficiency. The representative Backsheet is composed of chemically resistant poly(vinyl fluoride) (PVF) and cheap poly(ethylene terephthalate) (PET) films used as core and skin materials, respectively. PVF film is too expensive to satisfy the market requirements to Backsheet materials with production cost as low as possible. The promising alternatives to PVF-based Backsheet are hydrocarbon Backsheets employing semi-crystalline PET films instead of PVF film. It is, however, necessary to provide improved barrier property to water vapor to the PET films, since PET films are suffering from hydrolytic decomposition. In this study, a polyurethane adhesive with reduced water vapor permeation behavior is developed via a homogeneous distribution of hydrophobic silica nanoparticles. The modified adhesive is expected to retard the hydrolysis of PET films located in the core and inner skin. To clarify the efficacy of the proposed concept, the mechanical properties and electrochemical PV performances of the Backsheet are compared with those of a Backsheet employing the polyurethane adhesive without the silica nanoparticles, after the exposure under standard temperature and humidity conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Journal of Technology Innovation
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• v.29 no.4
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• pp.1-30
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• 2021

Due to the recent development of system semiconductors, technical innovation for the electric devices of the automobile industry is rapidly progressing. In particular, the electric device of automobiles is accelerating technology development competition among automobile parts makers, and the development cycle is also changing rapidly. Due to these changes, the importance of strategic planning for R&D is further strengthened. Due to the paradigm shift in the automobile industry, the Product-Technical Roadmap (P/TRM), one of the R&D strategies, analyzes technology forecasting, technology level evaluation, and technology acquisition method (Make/Collaborate/Buy) at the planning stage. The product-technical roadmap is a tool that identifies customer needs of products and technologies, selects technologies and sets development directions. However, most companies are developing the product-technical roadmap through a qualitative method that mainly relies on the technical papers, patent analysis, and expert Delphi method. In this study, empirical research was conducted through simulations that can supplement and strengthen the product-technical roadmap centered on the automobile industry by fusing Gartner's hype cycle, cumulative moving average-based data preprocessing, and deep learning (LSTM) time series analysis techniques. The empirical study presented in this paper can be used not only in the automobile industry but also in other manufacturing fields in general. In addition, from the corporate point of view, it is considered that it will become a foundation for moving forward as a leading company by providing products to the market in a timely manner through a more accurate product-technical roadmap, breaking away from the roadmap preparation method that has relied on qualitative methods.

• Journal of Korea Technology Innovation Society
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• v.21 no.3
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• pp.1155-1178
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• 2018

Future automobiles are evolving into movable living spaces capable of eco-friendly autonomous driving. The role of electrically processing, controlling, and commanding various information in the vehicle is essential. It is expected that the automotive semiconductor will play a key role in the future automobile such as self-driving and eco-friendly automobile. In order to foster the automotive semiconductor industry, it is necessary to grasp technology trends and to acquire technology and quality that reflects the requirements in advance, thereby achieving technological innovation with industrial competitiveness. However, there is a lack of systematic analysis of technology trends to date. In this study, we analyzed the technology trends of automotive semiconductors using patent analysis and topic model, and confirmed technologies such as electric cars, driving assistance, and digital manufacturing. The technology trends showed that element technology and technical characteristics change according to technology convergence, market needs, and government regulations. Through this research, it is expected that it will help to make R&D policy for automotive semiconductor industry and to make decision for industrial technology strategy establishment. In addition, it is expected that it will be used effectively in detail research direction and patent strategy establishment by providing detailed classification of technology and trend analysis result of technology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.9
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• pp.551-557
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• 2019

Diagnosis of abnormal faults is essential for producing high quality products. The role of real-time diagnosis is quite increasing in the batch processes of producing high value-added products such as semiconductors, pharmaceuticals, and so forth. In this study, we evaluate the effect of variable selection and future-value estimation techniques on the performance of the diagnosis system, which is based on nonlinear classification and measurement data. The diagnostic performance can be improved by selecting only the variables that are important and have high contribution for diagnosis. Thus, the diagnostic performance of several variable selection techniques is compared and evaluated. In addition, missing data of a new batch, called future observations, should be estimated because the full data of a new batch is not available before the end of the cycle. In this work the use of different estimation techniques is analyzed. A case study on the polyvinyl chloride batch process was carried out so that optimal variable selection and estimation methods were obtained: maximum 21.9% and 13.3% improvement by variable selection and maximum 25.8% and 15.2% improvement by estimation methods.

• The Journal of the Korea Contents Association
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• v.21 no.2
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• pp.85-99
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• 2021

Graphene, called the "dream material" is drawing attention as a groundbreaking new material that will lead the era of the 4th Industrial Revolution. Graphene has high strength, excellent electrical and thermal conductivity, excellent optical permeability, and excellent gas barrier properties. In this paper, as the South Korean government recently announced Green New Deal and Digital New Deal policy, we analyze graphene technology, which is also attracting attention for its application to Corona 19 biosensor, to understand its national R&D trend and knowledge structure, and to explore the possibility of its application. Firstly, 4,054 cases of national R&D project information for the last 10 years are collected from the National Science & Technology Information Service(NTIS) to analyze the trend of graphene-related R&D. Besides, projects classified as green technology are analyzed concerning the government's Green New Deal policy. Secondly, text mining analysis is conducted by collecting 500 recent graphene-related articles from e-newspapers. According to the analysis, the field with the largest number of projects was found to be high-efficiency secondary battery technology, and the proportion of total research funds was also the highest. It is expected that South Korea will lead the development of graphene technology in the future to become a world leader in diverse industries including electric vehicles, cellular phone batteries, next-generation semiconductors, 5G, and biosensors.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.390-397
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• 2022

Parylene-C which was mainly used for industries such as electronics, machinery and semiconductors has recently been in the spotlight in the medical field due to its properties such as corrosion resistance and biocompatibility. In this study we intend to derive a plan to improve the bonding strength of Parylene-C coating with the SUS304 base material for medical use which can be applied to various medical fields such as needles, micro needles and in vitro diagnostic device sensors. Through plasma pretreatment the bonding strength between Parylene-C and metal materials was improved. It was confirmed that the coated surface was hydrophobic by measuring the contact angle and the improvement of the surface roughness of the sample manufactured through CNC machining was confirmed by measuring the surface roughness with SEM. Through the above results, it is thought that it will be effective in increasing usability and reducing pain in patients by minimizing friction when inserting medical devices and in contact with skin. In addition it can be applied to various application fields such as human implantable stents and catheters, and is expected to improve the performance and lifespan of medical parts.