• 센서학회지
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• 제26권4호
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• pp.228-234
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• 2017

Gas sensors based on metal-oxide-semiconductors are predominantly used in numerous applications including monitoring indoor air quality and detecting harmful substances such as volatile organic compounds. Nanostructures, e.g., nanoparticles, nanotubes, nanodomes, or nanofibers, have been widely utilized to improve the gas sensing properties of metal-oxide-semiconductors by increasing the effective surface area participating in the surface reaction with target gas molecules. Recently, 1-dimensional (1D) metal oxide nanostructures fabricated using glancing angle deposition (GAD) method with e-beam evaporation have been widely employed to increase the surface-to-volume ratio significantly with large-area uniformity and reproducibility, leading to promising gas sensing properties. Herein, we provide a brief overview of 1D metal oxide nanostructures fabricated using GAD and their gas sensing properties in terms of fabrication methods, morphologies, and additives. Moreover, the gas sensing mechanisms and perspectives are presented.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.611-617
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• 2001

The non-polar optical phonon scattering in the valence band depends on the masses, ratios, and types of mixtures of constituent atoms. Therefore, the random distribution of atoms in alloy semiconductors should be considered in the analysis of scattering mechanisms. For this purpose, the force equations of n atoms in a unit cell are expressed in a n x n matrix form to obtain the angular frequencies due to the acoustic and non-polar optical phonons. And, n is then assumed to be infinity. When this work is compared with other results published elsewhere, it is concluded that the independence of atomic displacement or amplitude of oscillation as ell as the infinite number of atoms in a unit cell must be taken into account for the random distribution of atoms in alloy semiconductors.

• 설비공학논문집
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• 제13권8호
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• pp.701-709
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• 2001

In this days, heat pipe heat sink has been widely applied to power controllers for railway substations to remove heat from power semiconductors(diodes or thyristors). The heat pipe heat sink consists of a aluminum heating block for mounting the thyristor, 2~3 heat pipes and large number of aluminum fins. The present study was to get fundamental informations of the structure, design parameters and heat transfer performances of heat pipe heat sink. Series of operational test for a unit with 3 heat pipes were performed and its heat flow circuit was analysed from the experimentally obtained data on wall temperature distribution. Total resistance was ranged 0.02~$0.03^{\circ}C$/W for a power range from 40W to400W. The time to get the steady state was approximately longer than 20 minutes, and overshooting was not occurred during start up operation.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2008년도 춘계학술대회 논문집
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• pp.305-310
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• 2008

최근 통신기술이 발달함에 따라 무선통신 주파수 대역폭은 더 넓어지게 되었고, 고집적 반도체 소자는 고속전철 시스템에 더 많이 적용되고 있다. 고속전철 시스템에서 사용되는 집적된 전력 반도체의 RFI (Radio Frequency Intereference, 라디오파 방해) 민감도 [또는 내성(耐性)]는 시스템의 안전에 많은 영향을 준다. 이 연구에서는 고속전철 시스템의 무선통신 주파수 대역에서 RFI 민감도 기준과 측정방법이 조사되었다.

• 동력기계공학회지
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• 제4권4호
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• pp.99-107
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• 2000

In this study several P type and N type ceramic semiconductors were prepared by atomic valence control and their electric resistivities were investigated with various concentrations of additive impurities. N-P junctions were made by thin film printing method and their varistor-like characteristics were investigated and their availability was discussed. The results are followings, 1) Some N type semiconductors with a proper concentration of additive impurity have minimum resistivities. 2) The N-P junction samples with ZnO as a constituent material of N type semiconductor have linearity in voltage-current characteristics, but the other N-P junction samples have the non-linearity, 3) Some N-P junction samples showed the good varistor-like characteristics.

• Journal of Power Electronics
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• 제16권3호
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• pp.905-914
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• 2016

A high-performance rectifier is introduced in this study. The proposed rectifier combines the conventional pulse width modulation, soft commutation, and instantaneously average line current control techniques to promote circuit performance. The voltage stresses of the main switches in the rectifier are lower than those in conventional rectifier topologies. Moreover, conduction losses of switches in the rectifier are certainly lower than those in conventional rectifier topologies because the power current flow path when the main switches are turned on includes two main power semiconductors and the power current flow path when the main switches are turned off includes one main power semiconductor. The rectifier also adopts a ZCS-PWM auxiliary circuit to derive the ZCS function for power semiconductors. Thus, the problem of switching losses and EMI can be improved. In the control strategy, the controller uses the average current control mode to achieve fixed-frequency current control with stability and low distortion. A prototype has been implemented in the laboratory to verify circuit theory.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.346-349
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• 2009

We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.60-63
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• 2009

In this letter we report on the carrier velocity of polycrystalline pentacene transistors as a function of electric field. We performed a series of measurements on devices with a range of channel lengths. At moderate electric fields (<$5{\times}10^5$ V/cm), the characteristics are similar to those of disordered or amorphous organic semiconductors. The highest velocities we have measured are near $6{\times}10^4$ cm/s at room temperature. We perform quasi-static and dynamic measurements to measure carrier velocity. These results fill an important void between experimental results that have been obtained with disordered/amorphous organic semiconductors and single crystals.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.146-147
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• 2002

III-V magnetic semiconductors initiated by GaMnAs growth at low temperatures via molecular beam epitaxy (MBE) has been a hot issue recently for their possible application to spntronics. GaMnN may be one of the candidates for room temperature operating ferromagnetic semiconductors as proposed by a theoretical calculation, However, since GaN was grown at very high temperatures above ∼750$^{\circ}C$ even with MBE, it is expected that the incorporation of Mn into GaN will be limited. (omitted)

• 전자통신동향분석
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• 제35권7호
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• pp.13-22
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• 2020

There is no denying that computing power has been a crucial driving force behind the development of artificial intelligence today. In addition, artificial intelligence (AI) semiconductors and computing systems are perceived to have promising industrial value in the market along with rapid technological advances. Therefore, success in this field is also meaningful to the nation's growth and competitiveness. In this context, ETRI's AI strategy proposes implementation directions and tasks with the aim of strengthening the technological competitiveness of AI semiconductors and computing systems. The paper contains a brief background of ETRI's AI Strategy #2, research and development trends, and key tasks in four major areas: 1) AI processors, 2) AI computing systems, 3) neuromorphic computing, and 4) quantum computing.