• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.1 no.1
• /
• pp.17-25
• /
• 1991

The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit $4{\times}10^{2}-7{\times}10^{3}cm^{-2}$ and $6{\times}10^{14}-4{\times}10^{15}cm^{-3}$, which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient ($dT/dx-10^{\circ}/cm$) and slower rates of post - growth cooling ($20^{\circ}C/hr:1240-1000^{\circ}C,\;30^{\circ}C/hr:1000-700^{\circ}C$). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.4
• /
• pp.242-245
• /
• 2021

In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.806-808
• /
• 2008

We studied ink-jet printing for selective deposition of soluble oxide semiconductor to fabricate transistor. Sol-gel derived ZTO solution was synthesized for ink-jet printable solution. Transistors were produced by printing oxide layer between ITO electrodes. We demonstrated that ink-jet printed ZTO transistors work well and surface treatment significantly influences device performance.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.41.2-41
• /
• 1998

• Journal of Sensor Science and Technology
• /
• v.28 no.6
• /
• pp.360-365
• /
• 2019

A polyvinylidene fluoride (PVDF)-based film speaker is successfully fabricated with enhanced bass sound by incorporating buckled nanospring carbon nanotubes (NS-CNTs) as fillers. Various concentrations up to 1-7 wt% of uniformly dispersed buckled NS-CNTs are loaded to increase the beta (β)-phase fraction, crystallinity, and dielectric constant of the speaker, and this results in the bass part enhancement of about 19 dB full scale (dBFS) at 7 wt% filler loading of the piezoelectric film speaker.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.546-548
• /
• 1987

We have studied 1iquid phase regrowth of phosphorus ion implanted silicon films on insulator (SOI) by rapid thermal annealing (RTA) method. Many twin boundaries were observed on the regrown silicon layer and mobility of the layer was increased from $14\;cm^2/v.sec$ to $38\;cm^2/v.sec$ after annealing at $1150^{\circ}C$ for 15 sec.

• Electronics and Telecommunications Trends
• /
• v.35 no.4
• /
• pp.1-10
• /
• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• Polymer Science and Technology
• /
• v.16 no.1
• /
• pp.38-47
• /
• 2005

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.73-73
• /
• 1998

• Korean Journal of Materials Research
• /
• v.13 no.8
• /
• pp.485-490
• /
• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.