• Title/Summary/Keyword: Semiconductor materials

Search Result 2,103, Processing Time 0.037 seconds

Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

  • Joung, Hodoug;Ahn, Il-Ho;Yang, Woochul;Kim, Deuk Young
    • Electronic Materials Letters
    • /
    • v.14 no.6
    • /
    • pp.774-783
    • /
    • 2018

  • Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.

  • https://doi.org/10.1007/s13391-018-0081-7 인용 KSCI

A review : atomic layer etching of metals

  • Yun Jong Jang;Hong Seong Gil;Gyoung Chan Kim;Ju Young Kim;Chang Woo Park;Do Seong Pyun;Ji Yeon Lee;Geun Young Yeom
    • Journal of the Korean institute of surface engineering
    • /
    • v.57 no.3
    • /
    • pp.125-139
    • /
    • 2024

  • As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.

  • https://doi.org/10.5695/JSSE.2024.57.3.125 인용 PDF