• Journal of Sensor Science and Technology
• /
• v.6 no.5
• /
• pp.369-375
• /
• 1997

$V_{2}O_{5}/ThO_{2}/Pd$-doped $SnO_{2}$ sensor has a good selectivity and stability to CO at high sensor temperature of about $500^{\circ}C$, and shows rapid response. In particular, many kinds of interference gases, such as $NO_{x}$, $C_{3}H_{8}$, $CH_{4}$ and $SO_{2}$ have been found to give only a slight influence on the sensor selectivity to CO gas sensitivity by doped $V_{2}O_{5}$ (3.0 wt.%). For the sensor we used well-known thick film technological route with $V_{2}O_{5}$(3.0 wt.%), Pd(1.0 wt.%) and $ThO_{2}$(l.5 wt.%) as catalytic materials. In the case of mixed $NO_{x}$-CO gases, as combustion exhaust gas, only CO detection by $SnO_{2}$ type semiconductor sensor is generally very difficult because of $NO_{x}$ interference. The developed sensors can use to measure the exhausting gas of the automobile or the boiler for the Air-to-Fuel ratio control.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.218-227
• /
• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.200-200
• /
• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.14-15
• /
• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.5
• /
• pp.887-892
• /
• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• Korean Journal of Optics and Photonics
• /
• v.17 no.5
• /
• pp.461-468
• /
• 2006

Optical characteristics in polymer films of MEH-PPV/DFPP blends were for the first time investigated. DFPP (N, N'-diperfluorophenyl-3,4,9,10-perylenetetracarboxylic diimide) used here was a novel n-type polymer, which had good stability in air and solubility in common solvents. For a 1:9 DFPP:MEH-PPV blend, highly efficient quenching of photoluminescence (PL) was observed. In addition, the photocurrent responses of these MEH-PPV/DFPP photovoltaic cells were measured. When the light intensity was $50mW/cm^2$, short-circuit photocurrent densities were two times higher than those of single layer MEH-PPV devices.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.22 no.5
• /
• pp.379-386
• /
• 2021

This study was undertaken to develop a cascade-type continuous culture system (CCCS) that combines both ICT and biotechnology (BT), for the mass production of microalgae. This system is capable of maintaining the essential culture conditions of pH, temperature, carbon dioxide, and illuminance control, which are key parameters for the growth of microalgae, and is economical for producing microalgae regardless of the season or location. It has the added advantage of providing stable and high productivity. In the current study, this system was applied to culture microalgae for 71 days, with subsequent analysis of the experimental data. The initial O.D. of the culture measured from incubator 1 was 0.006. On the 71st day of culture, the O.D.s obtained were 0.399 (incubator 1), 0.961 (incubator 2), 0.795 (incubator 3), and 0.438 (incubator 4), thereby confirming the establishment of continuous culture. Thus, we present a smart-farm based on ISMC (in-situ monitoring and control) for a mass culture method. We believe that this developed technology is suitable for commercialization, and has the potential to be applied to hydroponics-based cultivation of microalgae and cultivation of high-value-added medicinal plants as well as other plants used in functional foods, cosmetics, and medical materials.

• The Korean Journal of Nuclear Medicine Technology
• /
• v.23 no.1
• /
• pp.54-58
• /
• 2019

Purpose At now, there are many kind of dedicated heart SPECT machine in clinical nuclear medicine. Among those, the fixed focusing type SPECT can make a good quality, quantity image because a detectors of this SPECT arranged forward a special ROI and didn't rotate around of body. So, in this paper, we will evaluate a spatial uniformity about resolution and sensitivity at a same plane of a fixed focusing type SPECT. Materials and Methods We used D-SPECT as a fixed focusing type SPECT and Cario MD as a rotated parallel type SPECT to comparing each other. We injected $^{99m}Tc(14.8MBq/1cc)$ to 10 capillary tube (diameter=1mm), and we set those line sources a tfield of view of each SPECT. And then we acquired SPECT date, we applied are construction by recommended methods. By using two tomography images, we calculated a full width of half maximum as a resolution and total counts as a sensitivity, and we compared a CV (coefficientofvariation) values between two images as a spatial uniformity. Results In case of D-SPECT, a CV of resolution and sensitivity are 7.45%, 12.34%. In case of Cario MD, an CV of resolution and sensitivity are 12.49%, 21.84% Conclusion As a results, CV of resolution and sensitivity of a fixed focusing type SPECT is 67.75%, 77.00% higher than ones of a rotated parallel type SPECT. It means that a fixed focusing type SPECT is more uniformed, because this new SPECT can reduce a motion blur artifact by rotating detector around body, also all of detector that made by semiconductor arrange forward a special FOV like heart.

• New Physics: Sae Mulli
• /
• v.68 no.12
• /
• pp.1308-1314
• /
• 2018

$Er^{3+}$ and $Yb^{3+}$ co-doped $Y_3Ga_5O_{12}$ polycrystalline powders were prepared by using a solid-state reaction method, and their crystallinities were measured using X-ray diffraction. According to the results of X-ray diffraction, the powders showed a polycrystalline tetragonal structure. The photoluminescence and the upconversion luminescence properties of the $(Y_{0.85-x}Yb_{0.15})_3Ga_5O_{12}:Er^{3+}_x$ (x = 0.03, 0.06, 0.09, 0.12 and 0.15) phosphors were investigated in detail. Green and red upconversion emissions were observed for the phosphors excited by 980 nm radiation from a semiconductor laser. The powders exhibited strong green and weak red upconversion emission peaks at 553 and 660 nm, respectively. Also, their upconversion processes were explained using an energy-diagram analysis and the strongest upconversion intensity was emitted by the powder with a 0.12 mol $Er^{3+}$ ion concentration.

• New Physics: Sae Mulli
• /
• v.68 no.11
• /
• pp.1208-1214
• /
• 2018

The one-step spin coating method is reported as an excellent thin film process because it can be easily used to fabricate high-quality methyl-ammonium lead tri-iodide ($MAPbI_3$) perovskite layers. One of the important things in the one-step spin coating method towards obtaining high-quality $MAPbI_3$ layers is the anti-solvent (AS) engineering, which consists of an one-step deposition of the $MAPbI_3$ film and dripping of the AS. The properties of the $MAPbI_3$ layer were found to be strongly influenced by the amount, dispensing speed, and spraying time of the AS solution. The $MAPbI_3$ solution was prepared by dissolving lead iodide and methyl-ammonium iodide in N,N-dimethylformamide and adding N,N-dimethyl sulfoxide. Diethyl ether (DE) was used for the AS solution. The results indicate that a $MAPbI_3$ layer appropriately sprayed with DE is beneficial for improving film quality and device efficiency because nucleation of $MAPbI_3$ layer is affected by the characteristics of DE, which affect the film's crystallinity, density, and surface morphology. The $MAPbI_3$ layer, which was optimized by using 0.7 mL of DE, a 3.03 mL/sec dispensing speed, and a 7 second time to spray after spinning showed the best efficiency of 13.74%, which was reproducible.