• Journal of Semiconductor Engineering
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• v.3 no.1
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• pp.154-160
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• 2022

In this paper, we design a DC-DC boost converter with RF noise immunity to supply a stable positive output voltage for OLED displays. For RF noise immunity, an input voltage variation reduction circuit (IVVRC) is adopted to ensure display quality by reducing the undershoot and overshoot of output voltage. The boost converter for a positive voltage Vpos operates in the SPWM-PWM dual mode and has a dead-time controller using a dead-time detector, resulting in increased power efficiency. A chip was fabricated using a 0.18 um BCDMOS process. Measurement results show that power efficiency is 30% ~ 76% for load current range from 1 mA to 100 mA. The boost converter with the IVVRC has an overshoot of 6 mV and undershoot of 4 mV compared to a boost converter without that circuit with 18 mV and 20 mV, respectively.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.161-165
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• 2023

One of the difficult works in an autonomous driving system is detecting road lanes or objects in the road boundaries. Detecting and tracking a vehicle is able to play an important role on providing important information in the framework of advanced driver assistance systems such as identifying road traffic conditions and crime situations. This paper proposes a vehicle detection scheme based on deep learning to classify and tracking vehicles in a complex and diverse environment. We use the modified YOLO as the object detector and polynomial regression as object tracker in the driving video. With the experimental results, using YOLO model as deep learning model, it is possible to quickly and accurately perform robust vehicle tracking in various environments, compared to the traditional method.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.739-742
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• 2005

In this paper, an efficient detection algorithm for the flicker, which is caused by mismatching between light frequency and exposure time at CMOS image sensor (CIS), is proposed. The flicker detection can be implemented by specific hardware or complex signal processing logic. However it is difficult to implement on single chip image sensor, which has pixel, CDS, ADC, and ISP on a die, because of limited die area. Thus for the flicker detection, the simple algorithm and high accuracy should be achieved on single chip image sensor,. To satisfy these purposes, the proposed algorithm organizes only simple operation, which calculates the subtraction of horizontal luminance mean between continuous two frames. This algorithm was verified with MATLAB and Xilinx FPGA, and it is implemented with Magnachip 0.18 standard cell library. As a result, the accuracy is 95% in average on FPGA emulation and the consumed gate count is about 7,500 gates (@40MHz) for implementation using Magnachip 0.18 process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.87-87
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• 2004

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.791-793
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• 1993

The hall sensor is current detector using hall effect in semiconductor and the conventional type detect current with concentrating flux by current of conductor. So, detection of small current is very difficult because of residual magnetism. This paper give the experiments based results about method that detect the small DC current using minimizing the residual of hall element by magnetic modulation and concentrating flux. The suggested sensor can dector small current better than the conventional that.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.735-736
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• 2005

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.773-774
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• 2005

• Journal of the Korean Society of Radiology
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• v.14 no.1
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• pp.1-6
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• 2020

In this study, it was intended to replace the existing plane parallel ionization chamber, which requires cross-calibration in electron beam treatment. The semiconductor compounds HgI₂ was fabricated as detector, and the characteristics of HgI₂ detector for the 6, 9 and 12 MeV electron beam was analyzed in the linear accelerator. It was also intended to evaluate the possibility of substitution with existing detectors and their applicability as electron beam dosimetry and to use them as a basic study of the development of electronic beam dosimeter. As a result of reproducibility, RSD was 0.4246%, 0.5054%, and 0.8640% at 6, 9, and 12 MeV energy, respectively, indicating that the output signal was stable. As a result of the linearity, the R² was 0.9999 at 6 MeV, 0.9996 at 9 MeV, and 0.9997 at 12 MeV showed that the output signal is proportional to HgI₂ as the dose is increased. The HgI₂ detector of this study is highly applicable to electron beam measurement, and it may be used as a basic research on electron beam detection.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.28-33
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• 2006

An integrated 3.125Gbps clock and data recovery (CDR) circuit is presented. The circuit does not need a reference clock. It has a phase and frequency detector (PFD), which incorporates a bang-bang type 4X oversampling PD and a rotational frequency detector (FD). It also has a ring oscillator type VCO with four delay stages and three zero-offset charge pumps. With a proposed PD and m, the tracking range of 24% can be achieved. Experimental results show that the circuit is capable of recovering clock and data at rates of 3.125Gbps with 0.18 um CMOS technology. The measured recovered clock jitter (p-p) is about 14ps. The CDR has 1.8volt single power supply. The power dissipation is about 140mW.

• Journal of Radiation Protection and Research
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• v.41 no.4
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• pp.328-332
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• 2016

Background: Boron Neutron Capture Therapy (BNCT) is a new radiation therapy. In BNCT, there exists some very critical problems that should be solved. One of the severest problems is that the treatment effect cannot be known during BNCT in real time. We are now developing a SPECT (single photon emission computed tomography) system (BNCT-SPECT), with a cadmium telluride (CdTe) semiconductor detector. BNCT-SPECT can obtain the BNCT treatment effect by measuring 478 keV gamma-rays emitted from the excited state of $^7Li$ nucleus created by $^{10}B(n,{\alpha})$ $^7Li$ reaction. In the previous studies, we investigated the feasibility of the BNCT-SPECT system. As a result, the S/N ratio did not meet the criterion of S/N > 1 because deterioration of the S/N ratio occurred caused by the influence of Compton scattering especially due to capture gamma-rays of hydrogen. Materials and Methods: We thus produced an arrayed detector with two CdTe crystals to test cross talk phenomenon and to examine an anti-coincidence detection possibility. For more precise analysis for the anti-coincidence detection, we designed and made a collimator having a similar performance to the real BNCT-SPECT. Results and Discussion: We carried out experiments with the collimator to examine the effect of cross talk of scattering gamma-rays between CdTe elements more practically. As a result of measurement the coincidence events were successfully extracted. Conclusion: We are now planning to carry out evaluation of coincidence rate from the measurement and comparison of it with the numerical calculations.