• Journal of Institute of Control, Robotics and Systems
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• v.9 no.4
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• pp.296-303
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• 2003

A personal portable type electronic dosimeter using silicon PIN photodiode and small GM tube is recently attracting much attention due to its advantages such as an immediate indication function of dose and dose rate, alerting function, and efficient management of radiation exposure history and dose data. We designed and manufactured a semiconductor radiation detector aimed to directly measure X-ray and v-ray irradiated in silicon PIN photodiode, without using high-priced scintillation materials. Using this semiconductor radiation detector, we developed an active electronic dosimeter, which measures the exposure dose using pulse counting method. In this case, it has a shortcoming of over-evaluating the dose that shows the difference between the dose measured with electronic dosimeter and the dose exposed to the human body in a low energy area. We proposed an energy compensation filter and developed a dose conversion algorithm to make both doses indicated on the detector and exposed to the human body proportional to each other, thus enabling a high-precision dose measurement. In order to prove its reliability in conducting personal dose measurement, crucial for protecting against radiation, the implemented electronic dosimeter was evaluated to successfully meet the IEC's criteria, as the KAERI (Korea Atomic Energy Research Institute) conducted test on dose indication accuracy, and linearity, energy and angular dependences.

• Journal of Radiation Protection and Research
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• v.9 no.1
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• pp.19-25
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• 1984

There is not yet an universal method of electron dosimetry. The Authors measured dose distributions of the electron beams from Clinac-18 by means of silicon detector connected to X-Y recorder, and compared them in water phantom with dose distributions measured by film and ion chamber, both inserted in polystyrene phantom. The results are as followings, 1. Dose in build-up region increased with the field size for all energy, and depth dose profiles of $6{\sim}12MeV$ beam under the depth of maximum dose were independent of field size, but those of 15 and 18 MeV beam were dependent on the field size. 2. The widths of penumbra by semiconductor detector were narrower than those by film for same energy beam. 3. Depth dose profiles by three different dosimeter did not coincide each other. In the build-up region, dose by semiconductor detector was lower than that by any other dosimeter.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.67-70
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• 2010

X-ray absorption rate and multiplication factor of X-ray detector were calculated with Garfield code. High Z (= atomic number) was important factor to increase the absorption rate but low Z is also important to increase the multiplication. Five different gas composition were examined under the condition of 1400 V bias and 400 um gap. Xe 100% gas showed the highest absorption rate and He 96% + isobutene 4% showed the highest multiplication.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.3088-3090
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• 2000

In this paper, we introduce a charge pump PLL architecture which employs precharge phase frequency detector(PFD) and sequential PFD to achieve high frequency operation and fast acquisition. Operation frequency is increased by using precharge PFD when the phase difference is within -${\pi}\;{\sim}\;{\pi}$ and acquisition time is shortened by using sequential PFD and increased charge pump current when the phase difference is larger than |${\pi}$|. SO error detection range of proposed PLL structure is not limited to -${\pi}\;{\sim}\;{\pi}$. By virtue of this multi-phase frequency detector structure, the maximum operating frequency of 423MHz at 2.5V and faster acquisition were achieved by simulation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.923-928
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• 1986

This paper describes the design and fabrication of a high performance digital tuning analog component integrated circuit that contains a television station detector and decoders(H and L types). When the comparator level sampling method is used, this integrated circuit can be used as a stable channel selector for an external circuit with very large signal variation. It has been fabricated using the SST bipolar standard process and its chip size is 2.2x2.1mm\ulcorner As a result, we have succeeded in fabricating the IC that satisfies the D.C characteristics, and the channel station detector and decoder function.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.439-443
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• 2019

To improve the noise characteristics, software-based noise reduction algorithms are widely used in cadmium zinc telluride (CZT) pixelated semiconductor gamma camera system. The purpose of this study was to develop an improved median filtering algorithm using a thresholding method for noise reduction in a CZT pixelated semiconductor gamma camera system. The gamma camera system simulated is a CZT pixelated semiconductor detector with a pixel-matched parallel-hole collimator and the spatial resolution phatnom was designed with the Geant4 Application for Tomography Emission (GATE). In addition, a noise reduction algorithm with a median filter using an improved thresholding method is developed and we applied our proposed algorithm to an acquired spatial resolution phantom image. According to the results, the proposed median filter improved the noise characteristics compared to a conventional median filter. In particular, the average for normalized noise power spectrum, contrast to noise ratio, and coefficient of variation results using the proposed median filter were 10, 1.11, and 1.19 times better than results using conventional median filter, respectively. In conclusion, our results show that the proposed median filter using improved the thresholding method results in high imaging performance when applied in a CZT semiconductor gamma camera system.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.411-414
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• 2002

The CdTe semiconductor detector has a higher detection efficiency for x-rays and $\square$amma rays and a wider energy band gap compared with Si and Ge semiconductor detectors. Therefore, the size of the detector element can be made small, and can be operated at room temperature. The interaction between a CdTe detector and incident x-rays is mainly photoelectric absorption in the photon energy range of up to 100 keV. In this energy range, Compton effects are almost negligible. We have developed a 256 channel CdTe array detector system for monochromatic x-ray CT using synchrotron radiation. The CdTe array detector system, the element size of which is 1.98 mm (h) x 1.98 mm (w) x 0.5 mm (t), was operated in photon counting mode. In order to improve the spatial resolution, we tilted the CdTe array detector against the incident parallel monochromatic x-ray beam. The experiments were performed at the BL20B2 experimental hutch in SPring-8. The energy of incident monochromatic x-rays was set at 55 keV. Phantom measurements were performed at the detector angle of 0, 30 and 45 degrees against the incident parallel monochromatic x-rays. The linear attenuation coefficients were calculated from the reconstructed CT images. By increasing the detector angle, the spatial resolutions were improved. There was no significant difference between the linear attenuation coefficients which were corrected by the detector angle. It was found that this method was useful for improving the spatial resolution in a parallel monochromatic x-ray CT system.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10b
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• pp.1956-1960
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• 1991

This paper describes the measured results upon monochromatic light, compound light, and light emanated from light emitting diodes by a simplified wavemeter with a semiconductor color sensor. Since a single unit element of a semiconductor color sensor with two PN junction photodiodes has been developed, the author has fabricated the simplified wave detector by using the element. The simplified wive detector has been measured results upon monochromatic light, compound light, and light emanated from light emitting diodes. Since luminescent color of each diode locates in luminosity region, comparison of measured values of PD-150 and PD-151 resulted no remarkable difference in averaged wave length. As for monochromatic light, PD-151 showed very cross value to the color filter peak value rather than PD-150. As for compound light, PD-150 has shown such influence of long wave length light which reaches to near infrared ray with respect to PD-151.

• Journal of radiological science and technology
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• v.45 no.1
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• pp.57-67
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• 2022

CZT detectors, which are compound semiconductors that have been widely used recently for gamma-ray detection purposes, are difficult to detect neutrons because direct interaction with them does not occur unlike gamma-rays. In this paper, a method of detecting and determining energy levels (fast neutrons and thermal neutrons) of neutrons, in addition of identifying energy and nuclide of gamma-rays, and evaluating gamma dose rates using a CZT semiconductor detector is described. Neutrons may be detected by a secondary photoelectric effect or compton scattering process with a characteristic gamma-ray of 558.6 keV generated by a capture reaction (¹¹³Cd + ¹n → ¹¹⁴Cd + 𝛾) with cadmium (Cd) in the CZT detector. However, in the case of fast neutrons, the probability of capture reaction with cadmium (Cd) is very low, so it must be moderated to thermal neutrons using a moderator and the material and thickness of moderator should be determined in consideration of the portability and detection efficiency of the equipment. Conversely, in the case of thermal neutrons, the detection efficiency decreases due to shielding effect of moderator itself, so additional CZT detector that do not contain moderator must be configured. The CZT detector that does not contain moderator can be used to evaluate energy, nuclide, and gamma dose-rate for gamma-rays. The technology proposed in this paper provides a method for detecting both neutrons and gamma-rays using a CZT detector.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.50-53
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• 2002