• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1998년도 제13차 학술회의논문집
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• pp.480-483
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• 1998

For memory products, it is very important to develop a new production line as soon as possible. All products are inspected to get rid of defected products at the last testing stage. Those inspection data are called FCM. In this paper, based on the FCM data, Area Usage Factor (AUF) analyzing method will be proposed. Process engineers can make up their mind to which direction they should concentrate their analyzing power.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.73-78
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• 2010

This research is about the drying and curing characteristic of conductivity metallic ink on-line curing device in order to improve the curing time for productivity in RFID Gravure printing. The curing process is carried out to increase the electric conductivity after the metallic ink is printed on the substrate. The metal ink is composed of nano-sized silver or copper particles. In this research, the combined IR and Hot air curing system is used and its results is compared with those of oven, IR and Hot Air type respectively. Generally the curing time in the past is about 3 minutes. But the combined system (IR+Hot Air) in this research shows that curing time is less than 30 seconds. These results is much faster than those of other system. This study can be help to make Roll-to-Roll drying and curing process for mass and continuous production on-line.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Journal of Information Display
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• 제13권2호
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• pp.61-66
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• 2012

The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.71-76
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• 2009

The clean non-contact type conveyor system for vertical transfer of large size FPD(Flat Panel Display) glasses has been installed at FPD production line just since a few years ago. The most important part of the conveyor is the 3 axis permanent magnet rollers faced orthogonally in pairs. However, the systematic design method about it has not been proposed yet. In this paper, we studied a design analysis for determining geometrical parameters of the magnetic roller by using a commercial FEM tool of the 3D Maxwell. Through a series of simulation, we obtained the relationship of several geometrical parameters affecting the torque of the conveyor.

• 전기학회논문지
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• 제58권12호
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• pp.2505-2510
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• 2009

Semiconductor processes need measurement to confirm where there are problems in quality after progresses manufacturing process. This paper suggests equipment and automatic measure sampling method that control monitoring ratio according to change point occurrence availability of process that is not measure method by the existent simple ratio rate. This paper defines measure section as ailment section, metastable section and stability section by change point standard and create statistical model of each section and developed suitable measure rate model by section. As a result, we have accomplished maximum throughput and minimum sampling number that needs to maintain constant level of quality. Proposed method minimizes load of measure process by brings production quality sophistication and decrease of process badness and lowers measure rate in stable section making perception about problem occurrence quick heightening measure rate at change point occurrence.

• 한국산학기술학회논문지
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• 제9권2호
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• pp.327-332
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• 2008

본 논문에서는 반도체 소자와 디스플레이 패널의 제조공정에 사용되는 플라즈마 식각장비의 RF 정합특성을 개선하기 위한 모듈을 제안하였다. 구동부의 기구 중 베벨기어를 웜기어로 새롭게 설계 제작하고 제어부도 원칩 마이크로 프로세서를 이용하여 재구성하였다. 개발된 모듈은 기존의 정합장치보다 다양한 공정변수에 대한 능동적인 대처가 가능하고, 모터의 흐름현상 등을 개선함으로서 RF 정합특성이 개선되어, 플라즈마 식각공정의 생산성을 향상시킬 수 있음을 보였다.

• 한국산학기술학회논문지
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• 제12권4호
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• pp.1812-1816
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• 2011

본 연구에서는 약액 주입 후 미 도포로 인한 복합적인 공정불량을 예방하기 위하여 100nm 이하의 나노 반도체 제조공정에서 필수적인 스피너(spinner) 장비를 위한 약액 흐름제어 시스템을 개발하였다. 본 연구개발을 통하여 실시간으로 상태요소들을 감시할 뿐만 아니라 상태요소의 비정상적 변화나 웨이퍼 가공불량이 발생할 경우 해당 유니트를 정지시킴과 동시에 원격지에 있는 엔지니어에게 경보를 전송함으로써 즉각적인 대처가 가능하여 모듈의 수율을 향상시킬 수 있을 것으로 기대된다. 또한 세부 동작 시퀀스를 제어하기 위한 H/W와 S/W 시스템을 생산라인에 실장하고 성능점검 및 인증을 수행한 결과 5가지의 유형별 비정상적 프로세스를 정확히 검출하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 International Symposium
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• pp.219-225
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• 2002

This paper presents a novel "bumpless flip chip package"for cost! performance driven devices. Using the conventional electroplating and etching processes, this package enables the production of fine pitch BGA up to 256 I/O with single layer routing. An array of circuitry down to $25-50{\mu}{\textrm}{m}$ line/space is fabricated to fan-in and fan-out of the bond pads without using bumps or substrate. Various types of joint methods can be applied to connect the fine trace and the bond pad directly. The resin-filled terminal provides excellent compliancy between package and the assembled board. More interestingly, the thin film routing is similar to wafer level packaging whereas the fan-out feature enables high lead count devices to be accommodated in the BGA format. Details of the design concepts and processing technology for this novel package are discussed. Trade offs to meet various cost or performance goals for selected applications are suggested. Finally, the importance of design integration early in the technology development cycle with die-level and system-level design teams is highlighted as critical to an optimal design for performance and cost.

• 한국정밀공학회지
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• 제31권8호
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• pp.697-703
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• 2014

This paper is study of solving vibration problem occurred in moving hand of wafer transfer robot in semiconductor manufacturing line. Long settling time for decreasing vibration makes low production rate, and moreover the excessive vibration of hand sometimes breaks the wafer in a cassette. The ways of reducing the moving speed and changing the type of motion profile did not help for lessening vibration. Therefore, we analyzed the mechanical property of the hand such as natural frequency, and frequency component of the motion profile currently used in the manufacturing line. In several conditions of motion profile, we found the best condition of which the frequency component in near of natural frequency of the hand is minimal and this induced small vibration in moving hand. The results were verified theoretically and experimentally using frequency analysis.