• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.27-37
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• 2005

Direct writing technology on the silicon wafer surface is used to reduce the size of the chip as the miniature trend in electronic circuit. In order to improve the productivity and efficiency, the real time quality estimation is very important in each semiconductor process. In laser marking, marking quality is determined by readability which is dependant on the contrast of surface, the line width, and the melting depth. Many researchers have tried to find theoretical and numerical estimation models fur groove geometry. However, these models are limited to be applied to the real system. In this study, the estimation system for the line width during the laser marking was proposed by process monitoring method. The light intensity emitted by plasma which is produced when irradiating the laser to the silicon wafer was measured using the optical sensor. Because the laser marking is too fast to measure with external sensor, we build up the coaxial monitoring system. Analysis for the correlation between the acquired signals and the line width according to the change of laser power was carried out. Also, we developed the models enabling the estimation of line width of the laser marking through the statistical regression models and may see that their estimating performances were excellent.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.327-328
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• 2006

Recently, as the infocomindustry is developed, the semiconductor industry as well as the optical industry such as the optical communication and the optical instrument is developed rapidly. The transmission, storage and processing of information has been reaching an limit because amounts of information increase rapidly. The more quickly the optical communication is developed, the more sharply the demand of optical elements increase. The transport and inspection process is time consuming and the error rate is high, because this process are not automated in case of an optical lens. In this paper, the pick-up system that can hold optical elements and be transferred by the ultrasonic transport system is developed. The inspection system that distinguishes between the existence and the nonexistence of a defect is connected easily to pick-up system. The pick-up system separates the optical glass lens by results of the inspection. The automation program is developed by visual c++ programming.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.396-396
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• 2009

Chalcopyrite semiconductor $CuInSe_2$ nanoparticles were prepared using a low temperature colloidal route by reacting the starting materials (CuI, $InI_3$ and $Na_2Se$) in solvents. After synthesised $CuInSe_2$ nanoparticles precursors were mixed with organic binder for the viscosity of the precursor slurry to be suitable for the doctor blade method. The mixture of $CuInSe_2$ and binder was deposited onto molybdenum-coated sodalime glass substrates to form thin film. The precursor thin films were preheated on the hot plate to remove remaining solvents and binder material. After subsequent thermal processing of the thin film under a selenium ambient, $CuInSe_2$ absorber layer with grain size significantly lager than that of the nanoparticles was formed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.182-182
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• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• Laser Solutions
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• v.15 no.4
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• pp.12-15
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• 2012

On behalf of the existing semiconductor process, the electronic devices to low-cost mass production to mass print the way, the research for development of roll-to-roll printing process is actively underway. This study was performed in about the research on the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser imprinting technology was used to create printable roll, and after coating copper on the surface of steel and thereon after coating polymer, after removing the polymer on the surface of roll, the printable roll was made. The laser system and roll feeder system were constructed and control program was developed. We has found the optimal conditions to perform laser patterning experiments using a system developed and We can make the minimum line width of 18 ${\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.175-177
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• 2002

Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.1
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• pp.16-22
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• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3211-3217
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• 2013

Density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations have been employed to investigate the molecular structures and absorption spectra of three D-${\pi}$-A-type organic dyes (C1-1, D5 and TH208) containing identical ${\pi}$-spacers and electron acceptors, but different aromatic amine electron-donating groups (tetrahydroquinoline, triphenylamine and phenothiazine). The coplanar geometries indicate that the strong conjugation is formed in the dyes. The electronic structures suggest that the intramolecular charge transfer from the donor to the acceptor occurs, and the electron-donating ability of tetrahydroquinoline is stronger than those of triphenylamine and phenothiazine. The computed orbital energy levels of these dyes confirm that the electrons could be injected from the excited dyes to the semiconductor conduction band and the oxidized dyes could be reduced effectively by electrolyte. The TD-DFT results show that the CAM-B3LYP/6-31+G(d, p) is suitable for calculating the absorption spectra. The first absorption band for these dyes is assigned to the HOMO${\rightarrow}$LUMO and HOMO-1${\rightarrow}$LUMO transitions.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.225-229
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• 2004

Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2002.05a
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• pp.285-292
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• 2002

A cluster tool for semiconductor manufacturing is an integrated device that consists of several single wafer processing modules and a wafer transport module based on a robot. The distributed module controllers are integrated by an inter-module communication network and coordinated by a centralized controller, called a cluster tool controller (CTC). Since the CTC monitors and coordinates the distributed complex module controllers for advanced process control, complex commuication messaging and services between the CTC and the module controllers are required. A SEMI standard, CTMC(Cluster Tool Module Communication), specifies application-level communication service requirements for inter-module communication. We propose the use of high-level fieldbuses, for instance. PROFIBUS-FMS, for implementing CTMC since the high-level fieldbuses are well suited for complex real-time distributed manufacturing control applications. We present a way of implementing CTMC using PROFIBUS-FMS as the communication enabler. We first propose improvements of a key object of CTMC for material transfer and the part transfer protocol to meet the functional requirements of modem advanced cluster tools. We also discuss mapping objects and services of CTMC to PROFIBUS-FMS communication objects and services. Finally, we explain how to implement the mappings.