• 제목/요약/키워드: Semiconductor Optical Amplifier

검색결과 113건 처리시간 0.032초

Semiconductor Optical Amplifier를 이용한 5 Gb/s전광 XOR논리소자 (5 Gb/s all-optical XOR gate by using semiconductor optical amplifier)

  • 김재헌;변영태;전영민;이석;우덕하;김선호
    • 한국광학회지
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    • 제13권1호
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    • pp.84-87
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    • 2002
  • SOA (Semiconductor Optical Amplifier)의 inverter 원리를 응용하여 RZ 형식의 전광 XOR논리소자가 5 Gb/s 속도에서 처음으론 구현되었다. 먼저 Boolean AB와 Boolean AB가 실험적으로 구현되었으며 전광 XOR논리소자를 만들기 위해서 AB와 AB를 합하여 XOR의 Boolean 값인 AB+AB의 특성이 얻어졌다.

All-Optical Binary Full Adder Using Logic Operations Based on the Nonlinear Properties of a Semiconductor Optical Amplifier

  • Kaur, Sanmukh;Kaler, Rajinder-Singh;Kamal, Tara-Singh
    • Journal of the Optical Society of Korea
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    • 제19권3호
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    • pp.222-227
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    • 2015
  • We propose a new and potentially integrable scheme for the realization of an all-optical binary full adder employing two XOR gates, two AND gates, and one OR gate. The XOR gate is realized using a Mach-Zehnder interferometer (MZI) based on a semiconductor optical amplifier (SOA). The AND and OR gates are based on the nonlinear properties of a semiconductor optical amplifier. The proposed scheme is driven by two input data streams and a carry bit from the previous less-significant bit order position. In our proposed design, we achieve extinction ratios for Sum and Carry output signals of 10 dB and 12 dB respectively. Successful operation of the system is demonstrated at 10 Gb/s with return-to-zero modulated signals.

Theoretical Analysis of the Optical Filtering Effect on a Directly Modulated Reflective Semiconductor Optical Amplifier

  • Shin, Beomsoo;Oh, Sangyeol;Lee, Jaehoon
    • IEIE Transactions on Smart Processing and Computing
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    • 제5권1호
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    • pp.5-9
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    • 2016
  • The modulation bandwidth of a reflective semiconductor optical amplifier (RSOA) is limited by carrier lifetime. Therefore, it is hard to directly modulate an RSOA with high-speed electrical signals. We theorize that an optical filter can act as an optical equalizer, compensating for the narrow bandwidth limitation imposed by the RSOA. By modeling a time-varying RSOA with a modified transfer matrix method (TMM), we simulated 25 Gbps operation of an RSOA with optical filtering effects. We investigated the impact of detuning the center wavelength of the optical filter on the modulation of an RSOA. The numerical results show that it is possible to modulate an RSOA with an optical filtering effect at 25 Gbps without electronic equalization or digital signal processing.

All-optical Regenerator Using Semi-reflective Semiconductor Optical Amplifier

  • Kim T.Y.;Kim J.Y.;Han S.K.
    • Journal of the Optical Society of Korea
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    • 제10권1호
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    • pp.11-15
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    • 2006
  • We have proposed and theoretically verified an optical regenerator using a single semi-reflective semiconductor optical amplifier (SR-SOA). To explain the operation characteristics and the operation condition of the proposed opticalregenerator, the simplified gain model for the SR-SOA is introduced and confirmed by comparing the result of the SOA simulation based on the transfer matrix method (TMM). The simulation results show that both extinction ratio (ER) enhancement and signal amplification can be achieved in the proposed regenerator.

반도체 광증폭기에 기반을 둔 10 Gb/s 전광 반가산기 (10 Gb/s All-optical half adder by using semiconductor optical amplifier based devices)

  • 김재헌;전영민;변영태;이석;우덕하;김선호
    • 한국광학회지
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    • 제13권5호
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    • pp.421-424
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    • 2002
  • 반도체 광증폭기에 기반을 둔 소자들을 이용한 전광 반가산기가 처음으로 구현되었다. 전광 반가산기의 동작속도와 신호 형식은 각각 10Gb/s와 RZ였다. 전광 반가산기의 SUM과 CARRY의 동작에는 각각 전광 XOR 논리소자와 전광 AND 논리 소자가 이용되었으며 두 연산이 동시에 구현되었다.

반도체 광증폭기내의 Highly Nondegenerate Four-Wave Mixing에 의한 파장변환의 해석 (Analysis of wavelength conversion by highly nondegenerate four-wave mixing in a semiconductor optical amplifier)

  • 우상규;이연호
    • 한국광학회지
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    • 제10권4호
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    • pp.294-300
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    • 1999
  • 본 논문에서는 반도체 광증폭기내에서 four-wave mixing을 발생시키는 spectral hole burning을 더욱 정확하게 해석하기 위하여 밀도행렬을 기존의 방법에 비하여 정확하게 푸는 방법에 대하여 설명하고 이러한 밀도행렬에 대한 수치해석을 실시하여 그 해를 구한다. 이렇게 구한 결과를 통해 반도체 광증폭기내에서의 four-wave mixing에 의한 파장변환을 설명하는 결합 파동 방정식을 유도하고 이것의 해를 구하여 반도체 광증촉기에서의 파장변환이 어떻게 발생하는 지를 설명하고 3차 섭동을 이용하여 계산된 기존의 결과와 비교한다.

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Effect of Amplified Spontaneous Emission on the Gain Recovery of a Semiconductor Optical Amplifier

  • Lee, Hojoon
    • 한국광학회지
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    • 제29권1호
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    • pp.32-39
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    • 2018
  • The impact of the amplified spontaneous emission (ASE) on the gain recovery time of a bulk semiconductor optical amplifier (SOA) is investigated. The gain-recovery time is obtained by determining the time evolution of the gain, carrier density, and ASE in an SOA, after the propagation of a short pump pulse and continuous-wave (CW) probe of gain dynamics. In the simulation, a wide-band-semiconductor model, which can be characterized by the material gain coefficient over a wide wavelength range, is used, because the gain bandwidth of a practical SOA is very wide. The pump pulse and counterpropagating CW probe field are considered in the simulation, with the ASE noise spectrum equally divided.

All-optical Integrated Parity Generator and Checker Using an SOA-based Optical Tree Architecture

  • Nair, Nivedita;Kaur, Sanmukh;Goyal, Rakesh
    • Current Optics and Photonics
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    • 제2권5호
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    • pp.400-406
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    • 2018
  • The Semiconductor Optical Amplifier (SOA)-based Mach-Zehnder interferometer is a major contributor in all-optical digital processing and optical computation. Optical tree architecture provides one of the new, alternative schemes for integrated all-optical arithmetic and logical operations. In this paper, we propose an all-optical 3-bit integrated parity generator and checker using SOA-MZI-based optical tree architecture. The proposed scheme, able to process input signals at a desired operating wavelength, has been characterized using RZ-modulated signals at 10 Gbps. The maximum extinction ratios achieved at the output of the parity generator and checker are 10 dB and 8 dB respectively.