• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• 대한전자공학회논문지
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• 제26권7호
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• pp.83-89
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• 1989

강유전성 $PbTiO_3$ 박막을 rf스터링으로 기판온도 $100{\sim}150^{\circ}C$에서 형성시켰다. 이 박막의 구조는 X선 회절결과 비정질 형태로 파이로클로어 구조를 갖고 있었다. 이 박막을 열에 의해 어닐링한 경우는 $550^{\circ}C$에서, 레이저의 주사로 어닐링한 경우는 레이저 출력이 50watts일때 가장 우수한 결정 구조를 구할 수 있었다. 집합에서의 계면 특성을 구하기 위하여 MFS(metal-ferroelectric-semiconductor)및 MFOS(metal-ferroelectric-oxide-semiconductor) 구조를 형성하여 C-V특성을 조사하였다. 이때 MFS보다 MFOS의 경우가 Si표면에 sputter에 의한 결함이 작음을 알 수 있었다.

• 한국광학회지
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• 제22권5호
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• pp.207-213
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• 2011

몬테카를로 방법을 기반으로 한 수치해석을 이용하여 AWG(arrayed waveguide grating)의 위상 오차를 측정하는 방법을 제안한다. 진동수 영역 측정법에서 실험치와 가장 근접한 이론치를 구하기 위해 몬테카를로 방법을 사용하며 최적화된 이론치로부터 AWG 각 도파로의 진폭과 위상값들을 결정한다. 이 방법의 타당성을 검증하기 위해 모의실험을 수행하였다. AWG의 각 도파로에 임의로 위상 오차를 설정하여 가상의 실험치를 만들고 우리의 방법을 통해 거꾸로 위상 오차를 알아냈다. 모의실험 결과 간섭계 광원의 진동수 변조 범위가 AWG FSR(free spectral range)의 1.7 배보다 클 때, 그리고 위상 오차가 ${\pm}50^{\circ}$ 이내일 때 매우 정확하게 위상 및 진폭을 측정할 수 있음을 확인하였다.

• 한국통신학회논문지
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• 제19권12호
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• pp.2426-2438
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• 1994

본 논문에서는 DFB 반도체 레이저의 직접 주파수변조 응답특성에 대한 새로운 전기적 회로모델을 제시하였다. 특히 본 논문에서는 캐리어농도의 변조효과뿐만 아니고 온도변조효과에 따른 DFB 반도체 레이저의 변조특성을 동시에 고려함으로써 DC에서 수 GHz의 변조주파수 범위에 이르는 주파수응답특성을 얻을 수 있었다. 온도변조효과에 의한 주파수응답특성은 레이저 다이오드의 구조로부터 회로모델링하여 기존의 실험치와 비교하였으며, 캐리어농도변조효과에 이한 회로모델링은 DFB 레이저의 율방정식(rate equations)을 선형화함으로써 소신호 회로모델을 구하고 이를 기존의 수치해석에 의해 제시된 결과치와 비교하여 전체적인 주파수응답특성이 잘 일치함을 알 수 있었다.

• 한국광학회지
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• 제11권1호
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• pp.37-42
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• 2000

반도체 광 증폭기의 특성을 이해하기 위하여 비율 방정식을 수치 해석적으로 풀었다. 사용된 비율 방정식은 운반자 밀도와 자발 방출된 빛, 그리고 신호 빛을 위치와 시간의 함수로 기술할 수 있다. 사각 파형의 신호가 입사했을 경우에 대하여 위의 세가지 양을 구하여서 반도체 광증포기의 동적인 특성을 파악하였다. 파장 다중 광통신에서처럼 다중신호가 입사하는 경우의 비선형성을 분석하였다. 맥놀이에 의한 내부변조 변형을 계산하여 본 결과 파장 간격이 넓을수록 내부변조 변형은 줄어드는 결과를 정량적으로 얻었으며, 신호간의 채널 간섭은 신호의 세기가 감소하면 줄어드는 결과를 얻었다. 또한 신호로 사용되는 파장에서 충분히 멀리 떨어진 연속파동 레이저가 입사하는 경우에는 채널간의 신호간섭과 출력파형 변형이 감소하는 이득고정 효과가 나타남을 계산을 통하여 확인하였다.

• Design & Manufacturing
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• 제13권4호
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• pp.10-16
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• 2019

Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.

• Journal of Oral Medicine and Pain
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• 제19권1호
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• pp.73-91
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• 1994

The author used rabbits in order to examine the effect of Ga-As low power generating semiconductor laser on artificially produced injuries of experimental animals. Artificially produced injuries include surgical wound of 3mm length, 2mm depth in size on ventral skin surface of rabbit and buccal mucosa, and electrical injury formed on opposite side of skin and buccal mucosa by electrical cauterization of same length and depth, and chemical injury formed by FC(Formocresol) solution applied on the anterior dorsal part of tongue. And then, on the experimental group, Ga-As laser was irradiated beginning on the day after the wound formation and continued to irradiate every each other day for five minutes. After1, 3, 6, 9, 13th day, certain number of animals of control and experimental group were sacrified, and wound site tissue was excised to make samples and was observed under light microscope. The following is the conclusions after comparing the healing procedure of experimental and control group. The following results were obtained : 1. Inflammation was decreased more rapidly in the experimental group than the control group. 2. In the surgical, the electrical and the chemical injuries in the oral mucosa, re-epithelialization was completed more rapidly in the experimental group than the control group. In the electrical injury on the skin, re-epithelialization was completed about 6 days after wound formation on both groups. 3. In the electrical and the surgical injuries on the oral mucosa, granulation tissue formation started at 3 days after injury on both groups, but in the chemical injury, it was completed about 3 days faster in the control group than the experimental group. In the surgical wound on the skin, it was completed about 9 days after injury, but faster in the experimental group. In the electrical injury on the skin, it was faster in the control group than the experimental group. 4. In the electrical and the surgical injuries on the oral mucosa, fibrosis was started at 6~9 days after injury on both groups, but regeneration of connective tissue in the experimental group was observed much more than the control group. 5. When comparing the effect of wound healing on skin and oral mucosa of control and experimental group, granulation tissue formation and re-epithelialization in the oral mucosa was more vigorous. In conclusion, the difference of timing and the sequence of wound healing process(inflammation, re-epithelialization, granulation tissue formation, fibrosis) following Laser irradiation between control and experimental group was not observed, but the healing tissue was observed much more in the Laser irradiated group.

• 한국광학회지
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• 제14권6호
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• pp.669-673
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• 2003

본 연구에서는 기존의 ridge waveguide laser diode(RWG LD)보다 ridge폭에 따른 측방향 단일모드 특성이 우수하고 planar 화에 유리하며 측방향의 유효 굴절률차를 ridge 구조에 추가로 성장된 InGaAsP층의 두께로 조절이 가능한 Buried RWG LD를제작하였다. 본 연구에서는 Buried RWG LD를 CBE장치로 InGaAs/InGaAsP multiple quantum well(MQW) 에피 웨이퍼를 성장하고, LPE로 재성장하여 B-RWG LD를 제작하였다. 또한 ridge 폭을 5 $\mu\textrm{m}$와 7 $\mu\textrm{m}$로 하여 B-RWG LD를 제작하고 특성을 비교하여 보았다. 제작된 7 $\mu\textrm{m}$ B-RWG LD에서 광출력이 20㎽에 이를 때까지 고차모드 발진에 의한 kink현상이 일어나지 않았으며, 포화 광출력이 80 ㎽ 이상임을 확인하였다. 제작된 B-RWG LD가 측방향 단일모드로 동작함을 확인하기 위해 FFP을 측정한 결과, ridge 폭이 5 $\mu\textrm{m}$일 때는 2.7I$_{th}$ , ridge 폭이 7 $\mu\textrm{m}$일 때는 2.4I$_{th}$ 까지 단일모드로 동작함을 확인할 수 있다.

• ETRI Journal
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• 제38권4호
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• pp.665-674
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• 2016

We designed and fabricated a semiconductor optical amplifier-integrated dual-mode laser (SOA-DML) as a compact and widely tunable continuous-wave terahertz (CW THz) beat source, and a pin-photodiode (pin-PD) integrated with a log-periodic planar antenna as a CW THz emitter. The SOA-DML chip consists of two distributed feedback lasers, a phase section for a tunable beat source, an amplifier, and a tapered spot-size converter for high output power and fiber-coupling efficiency. The SOA-DML module exhibits an output power of more than 15 dBm and clear four-wave mixing throughout the entire tuning range. Using integrated micro-heaters, we were able to tune the optical beat frequency from 380 GHz to 1,120 GHz. In addition, the effect of benzocyclobutene polymer in the antenna design of a pin-PD was considered. Furthermore, a dual active photodiode (PD) for high output power was designed, resulting in a 1.7-fold increase in efficiency compared with a single active PD at 220 GHz. Finally, herein we successfully show the feasibility of the CW THz system by demonstrating THz frequency-domain spectroscopy of an ${\alpha}$-lactose pellet using the modularized SOA-DML and a PD emitter.