• Current Optics and Photonics
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• v.7 no.6
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• pp.638-654
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• 2023

Holography is generally known as a technology that records and reconstructs 3D images by simultaneously capturing the intensity and phase information of light. Two or more interfering beams and illumination of this interference pattern onto a photosensitive recording medium allow us to control both the intensity and phase of light. Holography has found widespread applications not only in 3D imaging but also in manufacturing. In fact, it has been commonly used in semiconductor manufacturing, where interference light patterns are applied to photolithography, effectively reducing the half-pitch and period of line patterns, and enhancing the resolution of lithography. Moreover, holography can be used for the manufacturing of 3D regular structures (3D photonic crystals), not just surface patterns such as 1D or 2D gratings, and this can be broadly divided into (i) holographic recording and (ii) holographic lithography. In this review, we conceptually contrast two seemingly similar but fundamentally different manufacturing methods: holographic recording and holographic lithography. We comprehensively describe the differences in the manufacturing processes and the resulting structural features, as well as elucidate the distinctions in the diffractive optical properties that can be derived from them. Lastly, we aim to summarize the unique perspectives through which each method can appear distinct, with the intention of sharing information about this field with both experts and non-experts alike.

• Applied Microscopy
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• v.2 no.1
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• pp.39-46
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• 1972

There are many kinds of microscopes suitable for general studies; optical microscopes(OM), conventional transmission electron microscopes (TEM), and scanning electron microscopes(SEM). The optical microscopes and the conventional transmission electron microscopes are very familiar. The images of these microscopes are directly formed on an image plane with one or more image forming lenses. On the other hand, the image of the scanning electron microscope is formed on a fluorescent screen of a cathode ray tube using a scanning system similar to television technique. In this paper, the features and some applications of the scanning electron microscope will be discussed briefly. The recently available scanning electron microscope, combining a resolution of about $200{\AA}$ with great depth of field, is favorable when compared to the replica technique. It avoids the problem of specimen damage and the introduction of artifacts. In addition, it permits the examination of many samples that can not be replicated, and provides a broader range of information. The scanning electron microscope has found application in diverse fields of study including biology, chemistry, materials science, semiconductor technology, and many others. In scanning electron microscopy, the secondary electron method. the backscattererd electron method, and the electromotive force method are most widely used, and the transmitted electron method will become more useful. Change-over of magnification can be easily done by controlling the scanning width of the electron probe. It is possible. to continuously vary the magnification over the range from 100 times to 1.00,000 times without readjustment of focusing. Conclusion: With the development of a scanning. electron microscope, it is now possible to observe almost all-information produced through interactions between substances and electrons in the form of image. When the probe is properly focused on the specimen, changing magnification of specimen orientation does not require any change in focus. This is quite different from the conventional transmission electron microscope. It is worthwhile to note that the typical probe currents of $10^{-10}$ to $10^{-12}\;{\AA}$ are for below the $10^{-5}$ to $10^{-7}\;{\AA}$ of a conventional. transmission microscope. This reduces specimen contamination and specimen damage due to heatings. Outstanding features of the scanning electron microscope include the 'stereoscopic observation of a bulky or fiber specimen in high resolution' and 'observation of potential distribution and electromotive force in semiconductor devices'.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.210-216
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• 2014

In this paper, it was proposed to develop front and rear image monitoring system for vehicle that help a driver to cope with urgent situation about a dangerous element. When parking a vehicle, the risk factors to be formed by the dead zone can be resolved by using anterior and posterior cameras of the vehicle. In embedded system environment, a SoC(System on Chip) and two high-resolution CMOS (Complementary metal-oxide-semiconductor) image sensors were used to transfer two high-resolution image data through he TCP/ IP-based network. To transfer image data through he TCP/ IP-based network, the images received by two cameras were compressed by using H.264 and they were transmitted with wireless method(Wi-Fi) by using real-time transport protocol (Real-time Transport Protocol). Transmission loss, transmission delay and transmission limit were solved in wireless (Wi-Fi) environment and the bit-rate of two image data compressed by H.264 was adjusted. And the system for the optimal transmission in wireless (Wi-Fi) environment was materialized and experimented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.179-186
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• 2019

In this study, we investigated the structural properties of $Ga_2O_3$ thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. $Ga_2O_3$ thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of $Ga_2O_3$ changed from ${\varepsilon}$-phase to ${\beta}$-phase depending on the growth temperature. The crystal structure of ${\varepsilon}-Ga_2O_3$ was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ${\varepsilon}-Ga_2O_3$ showed much better photocurrent characteristics in the 266 nm UV range than in the visible range.

• The Journal of Engineering Geology
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• v.30 no.1
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• pp.17-30
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• 2020

An optical televiewer is a geophysical logging device that produces continuous high-resolution full-azimuth images of a borehole wall using a light-emitting-diode and a complementary metal-oxide semiconductor image sensor to provide valuable information on subsurface discontinuities. Recently, borehole imaging logging has been applied in many fields, including ground subsidence monitoring, rock mass integrity evaluation, stress-induced fracture detection, and glacial annual-layer measurements in polar regions. Widely used commercial borehole imaging logging systems typically have limitations depending on equipment specifications, meaning that it is necessary to clearly verify the scope of applications while maintaining appropriate quality control for various borehole conditions. However, it is difficult to directly check the accuracy, implementation, and reliability for outcomes, as images derived from an optical televiewer constitute in situ data. In this study, we designed and constructed a modular fractured borehole model having similar conditions to a borehole environment to report unprecedented results regarding reliable data acquisition and processing. We investigate sonde magnetometer accuracy, color realization, and fracture resolution, and suggest data processing methods to obtain accurate aperture measurements. The experiment involving the fractured borehole model should enhance not only measurement quality but also interpretations of high-resolution and reliable optical imaging logs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Korean Journal of Remote Sensing
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• v.37 no.5_1
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• pp.1013-1027
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• 2021

Images taken with KOMPSAT-3 have additional NIR and PAN bands, as well as RGB regions of the visible ray band, compared to imagestaken with a standard camera. Furthermore, electrical and optical properties must be considered because a wide radius area of approximately 17 km or more is photographed at an altitude of 685 km above the ground. In other words, the camera sensor of KOMPSAT-3 is distorted by each CCD pixel, characteristics of each band,sensitivity and time-dependent change, CCD geometry. In order to solve the distortion, correction of the sensors is essential. In this paper, we propose a method for detecting uniform regions in side-slider-based KOMPSAT-3 images using segment-based noise analysis. After detecting a uniform area with the corresponding algorithm, a correction table was created for each sensor to apply the non-uniformity correction algorithm, and satellite image correction was performed using the created correction table. As a result, the proposed method reduced the distortion of the satellite image,such as vertical noise, compared to the conventional method. The relative radiation accuracy index, which is an index based on mean square error (RA) and an index based on absolute error (RE), wasfound to have a comparative advantage of 0.3 percent and 0.15 percent, respectively, over the conventional method.

• The Korean Journal of Nuclear Medicine Technology
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• v.23 no.1
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• pp.54-58
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• 2019

Purpose At now, there are many kind of dedicated heart SPECT machine in clinical nuclear medicine. Among those, the fixed focusing type SPECT can make a good quality, quantity image because a detectors of this SPECT arranged forward a special ROI and didn't rotate around of body. So, in this paper, we will evaluate a spatial uniformity about resolution and sensitivity at a same plane of a fixed focusing type SPECT. Materials and Methods We used D-SPECT as a fixed focusing type SPECT and Cario MD as a rotated parallel type SPECT to comparing each other. We injected $^{99m}Tc(14.8MBq/1cc)$ to 10 capillary tube (diameter=1mm), and we set those line sources a tfield of view of each SPECT. And then we acquired SPECT date, we applied are construction by recommended methods. By using two tomography images, we calculated a full width of half maximum as a resolution and total counts as a sensitivity, and we compared a CV (coefficientofvariation) values between two images as a spatial uniformity. Results In case of D-SPECT, a CV of resolution and sensitivity are 7.45%, 12.34%. In case of Cario MD, an CV of resolution and sensitivity are 12.49%, 21.84% Conclusion As a results, CV of resolution and sensitivity of a fixed focusing type SPECT is 67.75%, 77.00% higher than ones of a rotated parallel type SPECT. It means that a fixed focusing type SPECT is more uniformed, because this new SPECT can reduce a motion blur artifact by rotating detector around body, also all of detector that made by semiconductor arrange forward a special FOV like heart.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.