• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.7
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• pp.1551-1556
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• 2010

In this paper, we propose a new inspection method that applies fuzzy reasoning method considering the difference of brightness and intensity of illumination by bend together. In the preprocessing phase, we compensate the degree of semiconductor images with bilinear interpolation and moment-rotation. Then we use fuzzy reasoning method with the difference of brightness from error region by pattern matching and the difference of intensity of illumination from bends. Then the result is difuzzified and applied to the final inspection process. In experiment which uses 30 real world semiconductors with strait shots and side shots, the proposed method successfully discard the false positive identified by conventional brightness comparison only method without any loss of misidentification.

• Proceedings of the Korean Information Science Society Conference
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• 2001.10b
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• pp.334-336
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• 2001

반도체 제조와 같은 대량 생산 시스템에서 제품 검사는 매우 중요란 단계 중의 하나이다. 반도체 제조 공정 내에서의 시각 검사는 현재 사람의 육안에 주로 의존하고 있으나, 회로가 점점 복잡해지고 작아지는 추세에 비추어 볼 때 사람에 의한 시각 검사는 한계에 이를 것으로 보인다. 본 연구에서는 웨이퍼상의 결함을 자동으로 검출하고 검출된 길함을 분류하는 자동시각검사 시스템을 설계 구현하였다.

• Journal of the Korean Data and Information Science Society
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• v.18 no.3
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• pp.773-782
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• 2007

The statistical process control charts are very extensively used for monitoring of process mean, deviation, defect rate or reject rate. In this paper we consider a control chart to monitor the process reject rate in the high yield process, which is based on the observed cumulative probability of the number of items inspected until r defective items are observed. We first propose selection of the optimal value of r in the CPC-r charts, and also consider the usefulness of the chart in high yield process such as semiconductor or TFT-LCD manufacturing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.69-78
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• 2023

With the rapid growth of artificial intelligence, the demand for semiconductors is enormously increasing everywhere. To ensure the manufacturing quality and quantity simultaneously, the importance of automatic defect detection during the packaging process has been re-visited by adapting various deep learning-based methodologies into automatic packaging defect inspection. Deep learning (DL) models require a large amount of data for training, but due to the nature of the semiconductor industry where security is important, sharing and labeling of relevant data is challenging, making it difficult for model training. In this study, we propose a new framework for securing sufficient data for DL models with fewer computing resources through a divide-and-conquer approach. The proposed method divides high-resolution images into pre-defined sub-regions and assigns conditional labels to each region, then trains individual sub-regions and boundaries with boundary loss inducing the globally coherent and seamless images. Afterwards, full-size image is reconstructed by combining divided sub-regions. The experimental results show that the images obtained through this research have high efficiency, consistency, quality, and generality.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.165-169
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• 2002

Silicon wafer is very important accuracy make use semiconductor device substrate. In this research, for the uniformity dopant density distribution obtained to Neutron Transmutation Doping on make use Si in P Doping study work. In this research. we irradiated neutron on FZ silicon wafers which had high resistivity (1000~2000 ${\Omega}$cm), HANARO reactor was utilized resistivity changes due to observed, the generation of neutron irradiation on point defect analyzed, point defect on resistivity changes inquire into the effect. Before neutron irradiation theoretical due to calculated 5 ${\Omega}$-cm, 20.1 ${\Omega}$-cm for HTS hole and 5 ${\Omega}$-cm, 26.5 ${\Omega}$-cm, 32.5 ${\Omega}$-cm for IP3 hole. After neutron irradiation through SRP measurement the designed resistivities were approached, which were 2.1 H-cm for HTS-1, 7.21 ${\Omega}$-cm for HTS-2, 1.79 ${\Omega}$-cm for IP-1, 6.83 ${\Omega}$-cm for IP-2, 9.23 ${\Omega}$-cm for IP-3, respectively. Also after neutron irradiation resistivity changes due to thermal neutron dependent irradiation hole types free.

• Journal of IKEEE
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• v.26 no.1
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• pp.50-55
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• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.