• The Journal of the Acoustical Society of Korea
• /
• 제16권1E호
• /
• pp.49-56
• /
• 1997

Ultrasonic cleaning at high frequency around 1 MHz, called megasonic cleaning, is commonly used to remove particles less than 1 ㎛ by generating high frequency accelerations on the cleaning objects. Cleaning is performed in an ultrasonically-excited liquid contained in a double-structured container. Ultrasonic waves generated by piezoelectric transducers propagate in the outer container and are transmitted through the inner container. The bottom of the inner container is inclined to make oblique incidence of the ultrasonic wave in order to raise the efficiency of the transmission through the bottom plate. This work deals with the efficiency of the transmission, which directly affects the cleaning performance. The transmission characteristics of the ultrasonic wave in the megasonic cleaner have been obtained analytically and numerically for the variations of some parameters, such as the thickness and inclined angle of the bottom plate of the inner container and the chemical ratio and temperature of the cleaning liquid. The calculated results have yielded the optimum cleaning condition in terms of the sound power transmitted into the cleaning liquid.

• 청정기술
• /
• 제7권3호
• /
• pp.215-223
• /
• 2001

A present semiconductor cleaning technology is based upon RCA cleaning technology which consumes vast amounts of chemicals and ultra pure water(UPW) and is the high temperature process. Therefore, this technology gives rise to the many environmental issues, and some alternatives such as electrolyzed water(EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed water was generated by an electrolysis system which consists of three anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case of NH4Cl electrolyte, the oxidation-reduction potential and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.8, and -750mV and 10.0, respectively. AW and CW were deteriorated after electrolyzed, but maintained their characteristics for more than 40 minutes sufficiently enough for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF treated Si wafer surfaces were measured to be $65.9^{\circ}$, $66.5^{\circ}$ and $56.8^{\circ}$, respectively, which characterizes clearly the eletrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, ICP-MS was introduced. It was known that AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, Tencor 6220 were introduced. The particle distributions after various particle removal processes maintained the same pattern. In this work, RCA consumed about $9{\ell}$ chemicals, while EW did only $400m{\ell}$ HCl electrolyte or $600m{\ell}$ NH4Cl electrolyte. It was hence concluded that EW cleaning technology would be very effective for promoting environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.

• Tribology and Lubricants
• /
• 제31권6호
• /
• pp.239-244
• /
• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2005년도 ICCAS
• /
• pp.1309-1312
• /
• 2005

A multi-chemical supply system is developed and applied to a wet station, which uses the multi-chemical process in one bath. To control the concentration of two chemicals, control logic of a supply pump is programmed using the programable logic controller (PLC). By using the multi-chemical supply system, wet station with single bath is applied to cleaning process using multi chemicals such as buffed oxide etchant (BOE) and standard clean 1 (SC-1). The concentration of each chemical is measured in the bath to verify the multi-chemical supply system. The control range in the each chemical concentration is measured to 1.33weight% in NH4OH and 0.23weight% in H2O2. The multi-chemical supply system can be movable and usable as an independent module of fixed wet station. By simply midifying the PLC, a multi-chemical supply system can be developed for a wet station.

• 반도체디스플레이기술학회지
• /
• 제18권3호
• /
• pp.144-149
• /
• 2019

This paper describes the results of a study on the unmanned maintenance robot that simultaneously performs the cleaning and inspection of the photovoltaic panels. The robot has a special adsorptive device, an infrared sensor, a vacuum level sensor and a camera. The robot uses two SSC (Sliding Suction Cup) adsorptive devices to move up and down the slope. First, the forces generated when the robot moves up the slope are mechanically analyzed, and the required design and control of the adsorption system are suggested. The robot was designed and manufactured to operate stably by using the presented results. Next, the normal force between the panel and the wheel was measured to confirm that the robot was manufactured and operated as intended, and the robot motion was tested on the inclined panel. It has been proven that robots are well designed and built to clean and inspect sloped panels.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2007년도 추계종합학술대회
• /
• pp.747-750
• /
• 2007

본 연구는 부식을 방지하기 위해서는 metal line식각 후 염소 잔유물 과 plasma charge up을 식각 조건, PR strip조건 및 후속 세정 조건을 최적화함으로써 제거해야 한다고 제안 하였다. Metal line에 다량 분포하는 charge up은 후속 세정의 적정 PH와 만났을 때, 하부 tungsten plug의 부식을 유발 하게 된다. Metal line식각 및 PR strip후 세정에 있어 약액의 종류는 부식에 결정적인 영향을 미친다. Galvanic corrosion을 최소화하기 위한 적정 PH, metal attack을 최소화 할 수 있는 chemistry선택, 높은 식각 부산물 제거 효율의 약액, 최적의 $H_2O$처리 조건 등이 metal부식방지에 있어 결정적인 요소임을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제4권3호
• /
• pp.29-33
• /
• 2005

As the integrated devices become more and more sophistcated, the diameter of wafers increased up to 300 mm and strict level of cleaning is necessary to remove the particulates on the surface of wafer. Therefore we need a new type of wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is important to control the temperature and the concentration of chemical in the wet-station. In the conventional chemical supply system, it is difficult not only to fit the mixing rate of chemicals in cleaning process, but also to fit the quantity and temperature. Thus, we propose a new chemicals supply system, which overcomes above problems by the analysis of fluid and thermal transfer on chemical supply system.

• 한국정보처리학회논문지
• /
• 제7권1호
• /
• pp.115-125
• /
• 2000

본 논문에서는 반도체 웨이퍼 세정 장비를 위한 모니터링 시스템의 기본 요소와 이를 기반으로 모니터링 시스템 모델을 제시한다. 기본 요소는 모니터링 시스템에서 요구되는 필수적인 기능으로써 제어 시스템과의 통신, 사용자 인터페이스, 원격 감시 시스템과의 통신, 감시 데이터 관리, 테스크간 통신으로 구성된다. 기본 요소들의 기능과 기본 요소들 간의 관계를 정의하여 독립된 테스크로 설계한다. 제시한 모델의 타당성을 평가하기 위하여 Windows NT에서 Visual C++를 사용하여 기본 요소들을 구현하여 반도체 웨이퍼 세정 장비의 모니터링 시스템에 적용해 보았다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
• /
• pp.24.2-24.2
• /
• 2007

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2009년도 춘계학술대회 논문집
• /
• pp.889-890
• /
• 2009