• Title/Summary/Keyword: Semiconductor

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Implementation of Neuromorphic System with Si-based Floating-body Synaptic Transistors

  • Park, Jungjin;Kim, Hyungjin;Kwon, Min-Woo;Hwang, Sungmin;Baek, Myung-Hyun;Lee, Jeong-Jun;Jang, Taejin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.210-215
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    • 2017

  • We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitute the synaptic integration part to express the excitation and the inhibition mechanism of neurons, respectively. The number and the weight of the synaptic devices affect the amount of the current reproduced from the current mirror. The double-stage inverters controlling delay time and the NMOS with large threshold voltage ($V_T$) constitute the action-potential generation part. The generated action-potential is transmitted to next neuron and simultaneously returned to the back gate of the synaptic device for changing its weight based on spike-timing-dependent-plasticity (STDP).

  • https://doi.org/10.5573/JSTS.2017.17.2.210 인용 PDF KSCI

Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique

  • Kim, Hyun Woo;Kim, Jong Pil;Kim, Sang Wan;Sun, Min-Chul;Kim, Garam;Kim, Jang Hyun;Park, Euyhwan;Kim, Hyungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.572-578
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    • 2014

  • In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

  • https://doi.org/10.5573/JSTS.2014.14.5.572 인용 PDF KSCI