• Journal of the Korean Society of Marine Environment & Safety
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• v.27 no.7
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• pp.1124-1128
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• 2021

As regulations of emissions from ships become more stringent, electric propulsion systems have been increasingly used to solve this problem in vessels ranging from large merchant ships to small and medium-sized ships. Methods for improving the efficiency of the electric propulsion system include the improvement of power sources; the use of a system linked to environmentally friendly power sources, such as batteries, fuel cells, and solar power; and the development of hardware and control methodology for rectifiers, power conversion devices, and propulsion motors. The method using a phase-shifting transformer with diodes has been widely used for rectification. Power semiconductor devices with grid connection to an environmentally friendly power source using DC distribution, a variable speed power source, and the application of small and medium-sized electric propulsion systems have been developed. Accordingly, the demand for active front-end (AFE) rectifiers is increasing. In this study, a method using a neural network rather than a conventional proportional-integral controller was proposed to control the AFE rectifier. Tested controller data were used to design a neural network controller trained through MATLAB/Simulink. The neural network controller was applied to a rectification system designed using PSIM software. The results indicated the effectiveness of improving the waveform and power factor DC output stage according to the load variation. The proposed system can be applied as a rectification system for small and medium-sized environmentally friendly ships.

• Journal of the Korea Society of Computer and Information
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• v.28 no.3
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• pp.167-175
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• 2023

In the context of COVID-19, this study was conducted to study how college students' earned grades and average grade point averages changed according to face-to-face and non-face-to-face classes. For this study, grade data was extracted using an access database. For the study, 152 students during the 3rd semester were compared and analyzed the grade point average, average grade point average, midterm exam, final exam, assignment score, and attendance score of students who participated in non-face-to-face and face-to-face classes. As an analysis method, independent sample t-test statistical processing was performed. It was concluded that the face-to-face class students had better grades and average GPA. As a result, the face-to-face class students showed 4.39 points higher than the non-face-to-face class students, and the average grade value was 0.6642 points higher. As a result of the comparative analysis, it was statistically significant, and the face-to-face class averaged 21.22 and the non-face-to-face class had 16.83 points. In conclusion, it was confirmed that face-to-face students' grades were generally higher than those of non-face-to-face students, and that face-to-face students showed higher participation in class.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1069-1074
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• 2022

In this study, we prepared ITO thin films on the Nb₂O₅/SiO₂ double buffer layer and investigated electrical and optical properties according to the change of SiO₂ buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb₂O₅/SiO₂ double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b^*) of the ITO thin film deposited on the Nb₂O₅(10nm)/SiO₂(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb₂O₅/SiO₂ double buffer layer.

• The Journal of the Korea Contents Association
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• v.21 no.11
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• pp.203-212
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• 2021

The high-tech industry, a highly knowledge-intensive industry based on advanced technologies such as electronics, new materials, and IT, is developing rapidly centering on the semiconductor, display, and battery fields. The market size of this industry is continuously increasing, and various challenges are coming forward due to various factors such as changes in the market, changes in demand, and the requirements of the clients. Many strategies are being implemented to advance the start-up time of factories, such as fast-track construction and basic line construction. Therefore, construction of high-tech factory is required to respond to various types of construction plans and early decision making, and an accurate and reliable method of calculating construction costs is needed. In this study the existing construction type was classified into the overall line configuration considering the total production of the factory, and a basic line configuration for quick production start-up. The correction ratio/value for each detailed construction required to calculate the construction cost of the basic line configuration type was derived. Finally, reliability and accuracy were verified by applying the correction ratio suggested in this study to a new high-tech factory construction project.

• Clean Technology
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• v.28 no.3
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• pp.210-217
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• 2022

Boron(B) is a rare resource used for various purposes such as glass, semiconductor materials, gunpowder, rocket fuel, etc. However, Korea depends entirely on imports for boron. Considering the global boron reserves and its current production rate, boron will be depleted on earth in 50 years. Thus, a process including proper adsorbent materials recovering boron from seawater is demanded. This research proposed carbonized nanofibers prepared from electrospun PAN(polyacrylonitrile) mats as promising materials to adsorb boron in aqueous solution. First, the mechanism of boron adsorption on carbonized nanofibers was investigated by DFT(density functional method)-based molecular modeling and the calculated energetics demonstrated that the boron chemisorption on the nitrogen-doped graphene surface by a two-step dehydration is possible with viable activation energies. Then, the electrospun PAN mats were stabilized in air and then carbonized in an argon atmosphere before being immersed in the boric acid aqueous solution. Analytically, SEM(scanning electron microscopy) and Raman measurements were employed to confirm whether the electrospinning and carbonization of PAN mats proceeded successfully. Then, XPS(X-ray photoelectron spectroscopy) peak analysis showed whether the intended nitrogen-doped carbon nanofiber surface was formed and boron was properly adsorbed on nanofibers. Those results demonstrated that the carbonized nanofibers prepared from electrospun PAN mats could be feasible adsorbents for boron recovery in seawater.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.53-58
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• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Smart Media Journal
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• v.11 no.10
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• pp.46-53
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• 2022

Today, due to the 4th industrial revolution and extensive R&D funding, domestic companies have begun to possess world-class industrial technologies and have grown into important assets. The national government has designated it as a "national core technology" in order to protect companies' critical industrial technologies. Particularly, technology leaks in the shipbuilding, display, and semiconductor industries can result in a significant loss of competitiveness not only at the company level but also at the national level. Every year, there are more insider leaks, ransomware attacks, and attempts to steal industrial technology through industrial spy. The stolen industrial technology is then traded covertly on the dark web. In this paper, we propose a system for detecting industrial technology leaks in the dark web environment. The proposed model first builds a database through dark web crawling using information collected from the OSINT environment. Afterwards, keywords for industrial technology leakage are extracted using the KeyBERT model, and signs of industrial technology leakage in the dark web environment are proposed as quantitative figures. Finally, based on the identified industrial technology leakage sites in the dark web environment, the possibility of secondary leakage is detected through the PageRank algorithm. The proposed method accepted for the collection of 27,317 unique dark web domains and the extraction of 15,028 nuclear energy-related keywords from 100 nuclear power patents. 12 dark web sites identified as a result of detecting secondary leaks based on the highest nuclear leak dark web sites.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

• KIPS Transactions on Software and Data Engineering
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• v.12 no.3
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• pp.141-148
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• 2023

Accurate overlay metrology is essential to achieve high yields of semiconductor products. Overlay metrology performance is greatly affected by overlay target design and measurement method. Therefore, in order to improve the performance of the overlay target, measurement methods applicable to various targets are required. In this study, we propose a new algorithm that can measure image-based overlay. The proposed measurement algorithm can estimate the sub-pixel position by using a motion vector. The motion vector may estimate the position of the sub-pixel unit by applying a quadratic equation model through polynomial expansion using pixels in the selected region. The measurement method using the motion vector can calculate the stacking error in all directions at once, unlike the existing correlation coefficient-based measurement method that calculates the stacking error on the X-axis and the Y-axis, respectively. Therefore, more accurate overlay measurement is possible by reflecting the relationship between the X-axis and the Y-axis. However, since the amount of computation is increased compared to the existing correlation coefficient-based algorithm, more computation time may be required. The purpose of this study is not to present an algorithm improved over the existing method, but to suggest a direction for a new measurement method. Through the experimental results, it was confirmed that measurement results similar to those of the existing method could be obtained.