• Title/Summary/Keyword: Semiconducting metal oxide

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Enhancing Gas Response Characteristics of Mixed Metal Oxide Gas Sensors

  • Balamurugan, Chandran;Song, Sun-Ju;Kim, Ho-Sung
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.1-20
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    • 2018
  • Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

Conducting Metal Oxide Interdigitated Electrodes for Semiconducting Metal Oxide Gas Sensors

  • Shim, Young-Seok;Moon, Hi-Gyu;Kim, Do-Hong;Jang, Ho-Won;Yoon, Young-Soo;Yoon, Soek-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.65-65
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    • 2011
  • We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

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Sensing performances of Semiconducting Carbon Nanomaterials based Gas Sensors Operating at Room Temperature (반도체 탄소 나노재료 기반 상온 동작용 가스센서)

  • Choi, Sun-Woo
    • Ceramist
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    • v.22 no.1
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    • pp.96-106
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    • 2019
  • Semiconducting carbon-based nanomaterials including single-walled carbon nanotubes(SWCNTs), multi-walled CNT(MWCNTs), graphene(GR), graphene oxide(GO), and reduced graphene oxide(RGO), are very promising sensing materials due to their large surface area, high conductivity, and ability to operate at room temperature. Despite of these advantages, the semiconducting carbon-based nanomaterials intrinsically possess crucial disadvantages compared with semiconducting metal oxide nanomaterials, such as relatively low gas response, irreversible recovery, and poor selectivity. Therefore, in this paper, we introduce a variety of strategies to overcome these disadvantages and investigate principle parameters to improve gas sensing performances.

Studies on semiconducting metal-oxide(ZnO) Nanoweb from Electrospinning (전기방사를 이용한 반도체 산화물(ZnO) 나노웹 제조에 관한 연구)

  • Jo, Na-Gyeong;Kim, Han-Seong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.253-253
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    • 2009
  • Electrospinning is one of the simple, cost- efficient methods to produce long continuous semiconducting oxide nanofibers. Polyvinyl Alcohol (PVA) and zinc acetate were used. PVA/Zinc acetate aqueous solutions were electrospun into nonwoven webs. CCD camera, with a lens of long working distance and digital video board were used in capturing the drop and web deposition. The diameter and morphology of nanofibers were analyzed with a Field-emission scanning electron microscopy (FE-SEM). In this study, the average diameter and morphology of nanofibers have been explorered.

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Anodic Oxidation of Furfuryl Alcohol Using Metal Oxide Electrodes (금속산화물 전극을 사용한 Furfuryl Alcohol의 양극산화)

  • Yoo, Kwang-Sik;Lee, Yong-Taek
    • Applied Chemistry for Engineering
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    • v.3 no.3
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    • pp.482-490
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    • 1992
  • 2,5-dimethoxy-2,5-dihydrofurfuryl alcohol was electrosynthesized from furfuryl alcohol in methanol solution by using three kinds of metal oxide anode. The electrods were prepared by the following process : Thin layer of semiconducting material such as tin(IV)oxide and antimony(III)oxide was made on the titanium base metal in an electric furnace. The titanium metal block with the layer was coated with ${\alpha}-PbO_2$, ${\beta}-PbO_2$, and $MnO_2$ in each electrolytes by anodic deposition, respectively. The lead dioxide electrodes showed better anti-corrosive property than the manganase dioxide electrode. The yield of the product was 92% which is almost the same as the one with conventional platinum electrodes.

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Nanocatalyst Decorated Metal Oxides on Highly Selective Chemical Sensors

  • Jung, Ji-Won;Jang, Ji-Soo
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.187-193
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    • 2022
  • The accurate detection of environmental and biomarker gas species has attracted increasing attention due to their broad applications, such as air quality monitoring, disease diagnosis, and explosive chemicals detection. To accurately detect target gas species using chemiresistive gas sensors, using nanocatalysts on semiconducting metal oxides (SMOs) is considered the most promising approach. This review summarizes recent studies on methods for nanocatalysts functionalization on SMOs to achieve the highly selective gas sensors. To this end, we discuss various nanocatalyst decorated metal oxide-based chemiresistive gas sensors and provide an insight to construct highly accurate gas sensors.

α-Fe2O3 nanostructure-based gas sensors

  • Lee, Seonyong;Jang, Ho Won
    • Journal of Sensor Science and Technology
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    • v.30 no.4
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    • pp.210-217
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    • 2021
  • Gas sensors based on semiconducting metal oxides have attracted considerable attention for various applications owing to their facile, cheap, and small-scale manufacturing processes. Hematite (α-Fe2O3) is widely considered as a promising candidate for a gas-sensing material owing to not only its abundance in the earth's crust and low price but also its chemical stability and suitable bandgap energy. However, only a few studies have been performed in this direction because of the low gas response and sluggish response of hematite-based gas sensors. Nanostructures present a representative solution to both overcome these disadvantages and exploit the desirable features to produce high-performance gas sensors. However, several challenges remain for adopting gas sensors based on metal oxide nanostructures, such as improving cost efficiency and facilitating mass production. This review summarizes the recent studies on gas sensors based on hematite nanostructures. It also provides useful insights into various strategies for enhancing the gas-sensing properties of gas sensors based on hematite nanostructures.

Boosting up the photoconductivity and relaxation time using a double layered indium-zinc-oxide/indium-gallium-zinc-oxide active layer for optical memory devices

  • Lee, Minkyung;Jaisutti, Rawat;Kim, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.278-278
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    • 2016
  • Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

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Characterization of Solution-Processed Oxide Transistor with Embedded Electron Transport Buffer Layer (전자 수송층을 삽입한 용액 공정형 산화물 트랜지스터의 특성 평가)

  • Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.8
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    • pp.491-495
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    • 2017
  • We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

Enhanced alizarin removal from aqueous solutions using zinc Oxide/Nickel Oxide nano-composite

  • Basma E. Jasim;Ali J. A. Al-Sarray;Rasha M. Dadoosh
    • Analytical Science and Technology
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    • v.37 no.1
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    • pp.39-46
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    • 2024
  • Alizarin dye, a persistent and hazardous contaminant in aquatic environments, presents a pressing environmental concern. In the quest for efficient removal methods, adsorption has emerged as a versatile and sustainable approach. This study focuses on the development and application of Zinc Oxide/Nickel Oxide (ZnO/NiO) nano-composites as adsorbents for alizarin dye removal. These semiconducting metal oxide nano-composites exhibit synergistic properties, offering enhanced adsorption capabilities. Key parameters affecting alizarin removal, such as contact time, adsorbent dosage, pH, and temperature, were systematically investigated. Notably, the ZnO/NiO nano-composite demonstrated superior performance, with a maximum alizarin removal percentage of 76.9 % at pH 6. The adsorption process followed a monolayer pattern, as suggested by the Langmuir model. The pseudo-second-order kinetics model provided a good fit to the experimental data. Thermodynamic analysis indicated that the process is endothermic and thermodynamically favorable. These findings underscore the potential of ZnO/NiO nano-composites as effective and sustainable adsorbents for alizarin dye removal, with promising applications in wastewater treatment and environmental remediation.