• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.227-234
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• 2000

Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.38-38
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• 1997

• 센서학회지
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• 제4권4호
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• pp.23-28
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• 1995

백금작업전극과 광가교화된 효소고정화막을 가진 ISFET 포도당 및 자당센서가 제조되었다. 효소반응의 부산물인 과산화수소수($H_{2}O_{2}$)는 백금전극표면에서 분해되어 센서의 감지특성을 개선시키고, 광가교화 고분자(PVA-SbQ)가 효소고정화막으로 이용되어 센서의 응답시간을 단축하였다. 그리고 백금전극의 면적변화에 따라 센서의 응답크기는 증가하였다. 센서의 응답시간은 $3{\sim}5$분이었으며, $30{\sim}300mg/dl$의 포도당 및 자당농도에서 센서의 선형적인 응답을 보였다.

• ETRI Journal
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• 제35권4호
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• pp.603-609
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• 2013

In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.