• Restorative Dentistry and Endodontics
• /
• v.33 no.2
• /
• pp.125-132
• /
• 2008

The purpose of this study is to compare the shear bond strength of repaired composite resin with different bonding agents and evaluate the effect of bonding agents on composite repair strength. Forty composite specimens (Z-250) were prepared and aged for 1 week by thermo cycling between 5 and $55^{\circ}C$ with a dwell time of 30s. After air abrasion with $50\;{\mu}m$ aluminum oxide, following different bonding agents were applied (n = 10); SB group: Scotchbond multipurpose adhesive (3 step Total-Etch system); XE group: Clearfil SE bond (2 step Self-Etch system); XP group: XP bond (2 step Total-Etch system); XE group: Xeno III (1 step Self-Etch system). After bonding procedure was completed, new composite resin (Z-250) was applied to the mold and cured. For control group. 10 specimens were prepared. Seven days after repair, shear bond strength was measured. Data was statistically analyzed using one-way ANOVA and Tukey's test (p<0.05). The means and standard deviations of shear bond strength (MPa ${\pm}$ S.D.) per group were as follows: SB group: 17.06; SE group: 19.10; XP group: 14.44; XE group: 13.57; Control Group: 19.40. No significant difference found in each group. Within the limit of this study, it was concluded that the different type of bonding system was not affect on the shear bond strength of repaired composite resin.

• Restorative Dentistry and Endodontics
• /
• v.30 no.4
• /
• pp.344-351
• /
• 2005

This study compared the microshear bond strength $({\mu}SBS)$ to end and side of enamel rod bonded by four adhesives including two total etch adhesives and two self-etch adhesives. Crown segments of extracted human molars were cut mesiodistally. The outer buccal or lingual surface was used as specimens cutting the ends of enamel rods, and inner slabs used as specimens cutting the sides of enamel rods. They were assigned to four groups by used adhesives: Group 1 (All-Bond 2), Group 2 (Single Bond), Group 3 (Tyrian SPE/One-Step Plus), Group 4 (Adper Prompt L-Pop). After each adhesive was applied to enamel surface, three composite cylinders were adhered to it of each specimen using Tygon tube. After storage in distilled water for 24 hours, the bonded specimens were subjected to ${\mu}SBS$ testing with a crosshead speed of 1 mm/minute. The results of this study were as follows: 1. The $({\mu}SBS)$ of Group 2 $(16.50\pm2.31 MPa)$ and Group 4 $(15.83\pm2.33 MPa)$ to the end of enamel prism was significantly higher than that of Group 1 $(11.93\pm2.25 MPa)$ and Group 3 $(11.97\pm2.05 MPa)$ (p<0.05). 2. The $({\mu}SBS)$ of Group 2 $(13.43\pm2.93 MPa)$ to the side of enamel prism was significantly higher than that of Group 1 $(8.64\pm1.53 MPa)$, Group 3 $(9.69\pm1.80 MPa)$, and Group 4 $(10.56 \pm1.75 MPa)$ (p<0.05), 3. The mean $({\mu}SBS)$ to the end of enamel rod was significantly higher than that to the side of enamel rod in all group (p<0.05).

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.5
• /
• pp.54-59
• /
• 1995

We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1364-1366
• /
• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.433-433
• /
• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• The Journal of Advanced Prosthodontics
• /
• v.10 no.4
• /
• pp.308-314
• /
• 2018

PURPOSE. Plasma activation of hydrophobic zirconia surfaces might be suitable to improve the bond strength of luting materials. The aim of this study was to analyze the influence of nonthermal argon-plasma on the shear bond strength (SBS) between zirconia and different combinations of 10-MDP adhesive systems and luting composites after artificial aging. MATERIALS AND METHODS. Two hundred forty Y-TZP specimens were ground automatically with $165{\mu}m$ grit and water cooling. Half of the specimens received surface activation with nonthermal argon-plasma. The specimens were evenly distributed into three groups according to the adhesive systems ([Futurabond U, Futurabond M, Futurabond M + DCA], VOCO GmbH, Germany, Cuxhaven) and into further two subgroups according to the luting materials ([Bifix SE, Bifix QM], VOCO GmbH). Each specimen underwent artificial aging by thermocycling and water storage. SBS was measured in a universal testing machine. Statistical analysis was performed using ANOVA and $Scheff{\grave{e}}$ procedure with the level of significance set to 0.05. RESULTS. Surface activation with nonthermal plasma did not improve the bond strength between zirconia and the tested combinations of adhesive systems and luting materials. The plasma-activation trended to reveal higher bond strength if the self-etch luting material (Bifix SE) was used, irrespective of the adhesive system. CONCLUSION. Plasma-activation seems to be suitable to improve bond strength between zirconia and self-etch resin materials. However, further research is necessary to identify the influence of varying plasma-parameters.

• Journal of Technologic Dentistry
• /
• v.29 no.2
• /
• pp.141-150
• /
• 2007

The purpose of this study was to ascertain the bonding durability of self-etching dentin bonding agents to dentin by means of shear bonding strength. Several acid-etching dentin bonding system (ESPE Z100) and self-etching dentin bonding systems (DEN-FIL, GRADIA DIRET) were used. The occlusion surface of human molars were ground flat to expose dentin and treated with the etch bonding system according to manufactures instruction and followed by composite resin application. After 24hours of storage at 37$^{\circ}C$, the shear bonding strength of the specimens was measured in a universal testing machine with a 1mm/min crosshead speed. An one-way analysis of variance and the scheffe test were performed to identify significant differences (p<0.05). The bonded interfacial surfaces and treated dentin surfaces were examined using a SEM. Through the analysis of shear bond strength data and micro-structures of dentin-resin interfaces, following results are obtained. In dentin group, the shear bond strength of DEN-FIL showed statistical superiority in comparison to the other groups and followed by ESPE Z100 and GRADIA DIRECT (p<0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05a
• /
• pp.35-37
• /
• 2001

The Al etching was studied employing negative ions generated in the downstream $Cl_2$ plasma. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which trapped electrons. Addition of $SF_6$ and $H_2$ to a $Cl_2/BCl_3$ mixture reduced significantly Vdc.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.45 no.4
• /
• pp.445-454
• /
• 2018

The aim of this study was to measure the shear bond strength (SBS) of different adhesive systems to calcium silicate-based materials (Biodentine and RetroMTA). Eighty cylindrical acrylic blocks, with a hole (5.0 mm diameter, 2.0 mm height) in each, were prepared. The holes were filled with Biodentine (BD) and RetroMTA (RMTA), and the specimens were divided into 2 groups. Each group was classified into 4 subgroups: Clearfil$^{TM}$ SE (CSE) ; AQ bond (AQ) ; All bond universal Self-etch (ABU-SE) ; and All bond universal Total-etch (ABU-TE). After the application of different adhesive systems, composite resin (Z350) was applied over BD and RMTA. The SBS was measured using a universal testing machine, and the data were compared using the Kruskal-Wallis test and the Mann-Whitney test. The highest and lowest values of SBS were observed for BD-ABU-SE and RMTA-AQ, respectively. No significant differences were found in the SBS between ABU-TE and ABU-SE and between ABU-TE and CSE to BD and RMTA. According to the data, BD showed a higher SBS than did RMTA when BD and RMTA are compared in the same adhesive agents. Further, among all groups, composite resin with ABU-SE showed better bond strength to BD and RMTA.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.80-81
• /
• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.