• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.154-154
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• 2011

자발형성법(Self-assembled)을 이용한 InAs 양자점(Quantum dots)은 성장법의 고유한 물리적 한계로 길이방향에 대한 수직방향 비율(Aspect ratio, AR)이 상대적으로 작은 값을 갖는다. 기존에 보고된 바에 따르면 GaAs 기판에 형성한 InAs 양자점은 일반적으로 AR이 0.3 정도를 보인다. 이러한 높이가 상대적으로 낮은 InAs 양자점은 수직방향으로 운반자(Carrier)의 파동함수 (Wave-function) 구속이 작게 되어 나노 양자점 구조의 0차원적 특성이 저하되게 된다. 본 논문에서는 Arsenic 차단법(Interruption technique)을 이용한 수정자발형성법(Modified self-assembled method, MSAM)으로 InAs 양자점(MSAM-InAs 양자점)을 형성하고 성장 변수에 따라 광 및 구조적 특성을 평가하여 0차원 순도를 분석하였다. MSAM InAs 양자점을 성장하고 12 nm 두께의 GaAs spacer 층을 증착한 후 $600^{\circ}C$에서 30초 동안 Arsenic 분위기에서 열처리(Annealing)를 수행 한 후 다시 InAs을 증착 하였다. 이러한 과정을 5번 반복하여 높이 방향으로 형상을 개선시킨 InAs 양자점을(Vetically-controlled MSAM, VCMSAM) 성장하였다. 기존 자발형성법을 이용한 InAs 양자점과 MSAM-InAs 양자점 단일층 구조를 기준시료로 성장하였다. 상온 포토루미네슨스(Photoluminescence, PL) 실험에서 단일 MSAM InAs 양자점 및 VCMSAM 양자점 시료의 발광에너지는 각각 1.10 eV와 1.13 eV를 나타내었다. VCMSAM InAs 양자점 시료의 PL세기는 단일 MSAM 양자점보다 3.4배 증가되어, 확연히 높게 나타나는 결과를 보였다. 이러한 결과는 높이 방향으로 운반자의 파동함수 구속력이 증가하여 구속준위 (Localized states)의 전자-정공의 파동함수중첩(Overlap integral)이 개선된 것으로 설명할 수 있다. 투과전자현미경(Transmission electron microscopy) 및 원자력간 현미경(Atomic force microscopy)을 이용하여 구조적 특성을 평가하고 이를 비교 분석한 결과를 보고한다.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.153-158
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• 2008

Fe-aluminides have the potential to replace many types of stainless steels that are currently used in structural applications. Once commercialized, it is expected that they will be twice as strong as stainless steels with higher corrosion resistance at high temperatures, while their average production cost will be approximately 10% of that of stainless steels. Self-propagating, high-temperature Synthesis (SHS) has been used to produce intermetallic and ceramic compounds from reactions between elemental constituents. The driving force for the SHS is the high thermodynamic stability during the formation of the intermetallic compound. Therefore, the advantages of the SHS method include a higher purity of the products, low energy requirements and the relative simplicity of the process. In this work, a Fe-aluminide intermetallic compound was formed from high-purity elemental Fe and Al foils via a SHS reaction in a hot press. The formation of iron aluminides at the interface between the Fe and Al foil was observed to be controlled by the temperature, pressure and heating rate. Particularly, the heating rate plays the most important role in the formation of the intermetallic compound during the SHS reaction. According to a DSC analysis, a SHS reaction appeared at two different temperatures below and above the metaling point of Al. It was also observed that the SHS reaction temperatures increased as the heating rate increased. A fully dense, well-bonded intermetallic composite sheet with a thickness of $700\;{\mu}m$ was formed by a heat treatment at $665^{\circ}C$ for 15 hours after a SHS reaction of alternatively layered 10 Fe and 9 Al foils. The phases and microstructures of the intermetallic composite sheets were confirmed by EPMA and XRD analyses.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.213-218
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• 2001

Presented are the STM images of self-assembled monolayer of 2-mercaptoethanol on Au(111). Striped structures of ($6{\times}3_{\frac{1}{2}}$), ($5{\times}3_{\frac{1}{2}}$), ($4{\times}3_{\frac{1}{2}}$) and compact-($5{\times}3_{\frac{1}{2}}$) were observed after annealing at $80^{\circ}C.$ Analysis of the ordered structures revealed that the basic fundamental units of the ordered structures were three crystallographically non-equivalent ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, and that the way of combination of the assemblies produced the four different structures. The($6{\times}3_{\frac{1}{2}}$) structure ( $\theta$ = 0.33) was composed of one ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$)$R30^{\circ}$ assembly, while the ($5{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.30) and ($4{\times}3_{\frac{1}{2}}$) ( $\theta$ = 0.38) structures were consisted of two ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies, separated by 5a and 4a, respectively. Furthermore, the compact-(5X 3½) structure ( $\theta$ = 0.50) was obtained by overlapping three ($3_{\frac{1}{2}}{\times}3_{\frac{1}{2}}$) $R30^{\circ}$ assemblies. In spite of the diversity in the adsorption structures, all the adsorption sites of 2-mercaptoethanol were fundamentally identical. On the other hand, the unannealed primitive SAM of 2-mercaptoethanol was characterized by two observations: a short-range order keeping the adsorbed molecules at approximately $3_{\frac{1}{2}}$ a and the small domains of the striped structures supporting that the observed surface structures on the annealed surface were the extension of the primitive layer of 2-mercaptoethanol. Comparing these observations with the already published structures of ethanthiol, it was concluded that the interaction between the hydroxyl groups of 2-mercaptoethanol might play a significant role in the adsorption step of 2-mercaptoethanol on Au(111) to organize the adsorption structures different from those of ethanthiol.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.402.1-402.1
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• 2016

The performance of solid oxide fuel cells (SOFCs) is directly related to the electrocatalytic activity of composite electrodes in which triple phase boundaries (TPBs) of metallic catalyst, oxygen ion conducting support, and gas should be three-dimensionally maximized. The distribution morphology of catalytic nanoparticle dispersed on external surfaces is of key importance for maximized TPBs. Herein in situ grown nickel nanoparticle onto the surface of fluorite oxide is demonstrated employing gadolium-nickel co-doped ceria ($Gd0.2-xNixCe0.8O2-{\delta}$, GNDC) by reductive annealing. GNDC powders were synthesized via a Pechini-type sol-gel process while maximum doping ratio of Ni into the cerium oxide was defined by X-ray diffraction. Subsequently, NiO-GNDC composite were screen printed on the both sides of yttrium-stabilized zirconia (YSZ) pellet to fabricate the symmetrical half cells. Electrochemical impedance spectroscopy (EIS) showed that the polarization resistance was decreased when it was compared to conventional Ni-GDC anode and this effect became greater at lower temperature. Ex situ microstructural analysis using scanning electron microscopy after the reductive annealing exhibited the exsolution of Ni nanoparticles on the fluorite phases. The influence of Ni contents in GNDC on polarization characteristics of anodes were examined by EIS under H2/H2O atmosphere. Finally, the addition of optimized GNDC into the anode functional layer (AFL) dramatically enhanced cell performance of anode-supported coin cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.4
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• pp.676-682
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• 2018

In wireless sensor networks, we propose an optimization algorithm in order to minimize the consumed energy of nodes for maritime search and rescue. In the marine environment, search and rescue operations are mainly performed on the surveillance side and passively on the rescued side. A self-configurable wireless sensor network can build a system that can send rescue signals in the operations. A simulated annealing algorithm is proposed to minimize the consumed energy of nodes in the networks with many nodes. As the density of nodes becomes higher, the algorithmic computation will increase highly. To search the good result in a proper execution time, the proposed algorithm proposes a new neighborhood generating operation and improves the efficiency of the algorithm. The proposed algorithm was evaluated in terms of the consumed energy of the nodes and algorithm execution time, and the proposed algorithm performed better than other optimization algorithms in the performance results.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.748-753
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• 2005

Among processes to manufacture parts from footwear materials like upper leathers, one of the most essential processes is the cutting one optimally arranging lots of parts on raw footwear materials and cutting. A new nesting strategy was proposed for the 2-dimensional part layout by using a two-stage approach, where which can be effectively used for water jet cutting. In the initial layout stage, a SOAL(Self-Organization Assisted Layout) based on the combination of FCM(Fuzzy C-Means) and SOM was adopted. In the layout improvement stage, SA(Simulated Annealing) based approach was adopted for a finer layout. The proposed approach saves much CPU time through a two-stage approach scheme, while other annealing-based algorithm so far reported fur a nesting problem are computationally expensive. The proposed nesting approach uses the stochastic process, and has a much higher possibility to obtain a global solution than the deterministic searching technique. We developed the automatic nesting software of NST(ver.1.1) software for footwear industry by implementing of these proposed algorithms. The NST software was applied by the optimized automatic arrangement algorithm to cut without the loss of leathers. if possible, after detecting damage areas. Also, NST software can consider about several features in not only natural loathers but artificial ones. Lastly, the NST software can reduce a required time to implement generation of NC code. cutting time, and waste of raw materials because the NST software automatically performs parts arrangement, cutting paths generation and finally NC code generation, which are needed much effect and time to generate them manually.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Polymer(Korea)
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• v.36 no.4
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• pp.542-548
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• 2012

Morphological characteristics and formation of symmetric polystyrene-block-poly(1,4-butadiene) copolymer (PS-b-PBD) in thin films upon solvent-annealing were investigated by using atomic force microscopy (AFM). The thin films solvent-annealed in cyclohexane revealed the perforated lamellae of poly(1,4-butadiene) in the matrix of polystyrene while those solvent-annealed in n-hexane exhibited highly disordered patterns. Interestingly, when the thin films of PS-b-PBD were solvent-annealed with binary mixtures of cyclohexane and n-hexane, the morphological transition from the perforated lameallae to the perpendicularly-oriented lamellae of poly(1,4-butadiene) could be induced by changing the mixing ratio of both solvents. We also demonstrated that after microdomians of poly(1,4-butadiene) were successfully degraded by UV-$O_3$, linear poly(dimethyl siloxane) chains were back-filled into the etched regions of the thin film and then converted to silica nano-objects by oxygen plasma treatments.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.417-427
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• 1992

Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${\times}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{\circ}C$for more than 40 hrs and at this condition the grain size was 3.2${\mu}$m.