• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.88-93
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• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Journal of the Society of Naval Architects of Korea
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• v.60 no.1
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• pp.1-9
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• 2023

In order to improve the propeller cavitation performance composed of Cavitation Inception Speed (CIS), cavitation extent and pressure fluctuation, it needs to improve the wake distribution that flows into the propeller. The warship propeller cavitation is strongly influenced by the wake created at the V-strut of various appendages. The inflow characteristics of the V-strut were investigated using Computational Fluid Dynamics (CFD) and the twisted angles of the V-strut were aligned with upstream flow. The resistance and self-propulsion tests for the model ship with the existing and modified V-struts were conducted in Towing Tank (TT), and wake distribution, CIS, cavitation observation and pressure fluctuation tests were conducted in Large Cavitation Tunnel (LCT). The propeller behind the modified V-strut showed better cavitation characteristics than that behind the existing V-strut. Another model test was conducted to investigate rudder cavitation performance by the change of the V-strut. The rudder cavitation characteristics were not improved by the change of the operating conditions. On the basis of the present study, it is thought that the stern appendages for better propeller cavitation performance would be developed.

• Journal of The Korean Astronomical Society
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• v.55 no.1
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• pp.11-22
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• 2022

We introduce the Transformable Reflective Telescope (TRT) kit that applies an aluminum profile as a base plate for precise, stable, and lightweight optical system. It has been utilized for optical surface measurements, developing alignment and baffle systems, observing celestial objects, and various educational purposes through Research & Education projects. We upgraded the TRT kit using the aluminum profile and truss and isogrid structures for a high-end optical test device that can be used for prototyping of precision telescopes or satellite optical systems. Thanks to the substantial aluminum profile and lightweight design, mechanical deformation by self-weight is reduced to maximum 67.5 ㎛, which is an acceptable misalignment error compared to its tolerance limits. From the analysis results of non-linear vibration simulations, we have verified that the kit survives in harsh vibration environments. The primary mirror and secondary mirror modules are precisely aligned within 50 ㎛ positioning error using the high accuracy surface finished aluminum profile and optomechanical parts. The cross laser module helps to align the secondary mirror to fine-tune the optical system. The TRT kit with the precision aluminum mirror guarantees high quality optical performance of 5.53 ㎛ Full Width at Half Maximum (FWHM) at the field center.

• Advances in nano research
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• v.15 no.5
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.97-102
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• 2006

Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.1
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• pp.37-44
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• 2015

In this paper, we have investigated a selective assembly method of single-walled carbon nanotubes (SWCNTs) on a silicon substrate using only photolithographic process and then proposed a fabrication method of field effect transistors (FETs) using SWCNT-based patterns. The aminopropylethoxysilane (APTES) patterns, which are formed for positively charged surface molecular patterns, are utilized to assemble and align millions of SWCNTs and we can more effectively assemble on a silicon (Si) surface using this method than assembly processes using only the 1-octadecyltrichlorosilane (OTS). We investigated a selective assembly method of SWCNTs on a Si surface using surface-programmed APTES and OTS patterns and then a fabrication method of FETs. photoresist(PR) patterns were made using photolithographic process on the silicon dioxide (SiO2) grown Si substrate and the substrate was placed in the OTS solution (1:500 v/v in anhydrous hexane) to cover the bare SiO2 regions. After removing the PR, the substrate was placed in APTES solution to backfill the remaining SiO2 area. This surface-programmed substrate was placed into a SWCNT solution dispersed in dichlorobenzene. SWCNTs were attracted toward the positively charged molecular regions, and aligned along the APTES patterns. On the contrary, SWCNT were not assembled on the OTS patterns. In this process, positively charged surface molecular patterns are utilized to direct the assembly of negatively charged SWCNT on SiO2. As a result, the selectively assembled SWCNT channels can be obtained between two electrodes(source and drain electrodes). Finally, we can successfully fabricate SWCNT-based multi-channel FETs by using our self-assembled monolayer method.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.