• Title/Summary/Keyword: Self-Contact

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Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device

  • Yoo, Sung-Won;Kim, Hyunsuk;Kang, Myounggon;Shin, Hyungcheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.204-209
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    • 2016
  • The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

A Study on the Relationship between Self-Actualization and Preference in Clothing Design of Individualist and Conformist (개성.동조 추구자의 디자인 선호도와 자아실현과의 상관성 연구)

  • 강경자;임지영
    • The Research Journal of the Costume Culture
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    • v.8 no.3
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    • pp.422-435
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    • 2000
  • In this study female college students having high interest in fashion were selected by homogeneous purposive sampling. The students were classified into two groups. 301 Students living in Chinju were asked on self-actualization and design preference. The date of respondents were analyzed by Pearson's correlation coefficients and t-test. The results of this study can be summarized as follows. 1. The line preference, chroma, thickness and weight of clothing textile were different in these two groups. 2. The students of individuality had self-actualization, feeling reactivity, self-regard, existentiality and capacity of intimate contact. 3. There were significant relation between self-actualization and the preference for clothing form, color and texture in two groups.

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Study on Damage Repair of Polymer Composites Using Self-Healing Technique (Self-healing Technique을 적용한 폴리머 복합재의 손상 보수 연구)

  • ;;M.R. Kessler;S.R. White
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2001.05a
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    • pp.93-96
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    • 2001
  • Structural polymer composites are susceptible to damage in the form of cracks, which form deep within the structure where detection is difficult and repair is almost impossible. A recent methodology for the damage repair of polymer composites using the self-healing technique is reported. The polymerization of the healing agent is triggered by contact with an embedded catalyst, being necessary to damage repair of polymer composites. For this purpose, the self-healing concept is introduced and the manufacturing process of microcapsule with the healing agent is briefly described. The polymerization between the healing agent and the catalyst is verified by the use of ESEM and IR spectroscopy. Finally the efficiency of the self-healing technique is investigated by measuring the critical load of TDCB specimen.

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Simplified model to study the dynamic behaviour of a bolted joint and its self loosening

  • Ksentini, Olfa;Combes, Bertrand;Abbes, Mohamed Slim;Daidie, Alain;Haddar, Mohamed
    • Structural Engineering and Mechanics
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    • v.55 no.3
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    • pp.639-654
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    • 2015
  • Bolted joints are essential elements of mechanical structures and metal constructions. Although their static behaviour is fairly well known, their dynamic behaviour due to shocks and vibrations has been less studied, because of the large size of the finite element models needed for a detailed simulation. This work presents four different simplified models suitable for studying the dynamic behaviour of an elementary bolted joint. Three of them include contact elements to allow sliding of the screw head and the nut on the assembled parts, and the last one allows rotation between screw and nut. A penalty approach based on the Coulomb friction model is used to model contact. The results show that these models effectively represent the dynamic behaviour, with different accuracy depending on the model details. The last model simulates the self loosening of a bolt subjected to transversal vibrations.

Phase Transition of Octaneselenolate Self-assembled Monolayers on Au(111) Studied by Scanning Tunneling Microscopy

  • Choi, Jung-Seok;Kang, Hun-Gu;Ito, Eisuke;Hara, Masahiko;Noh, Jae-Geun
    • Bulletin of the Korean Chemical Society
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    • v.32 no.8
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    • pp.2623-2627
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    • 2011
  • We investigated the surface structure and wetting behavior of octaneselenolate self-assembled monolayers (SAMs) on Au(111) formed in a 50 ${\mu}M$ ethanol solution according to immersion time, using scanning tunneling microscopy (STM) and an automatic contact angle (CA) goniometer. Closely-packed, well-ordered alkanethiol SAMs would form as the immersion time increased; unexpectedly, however, we observed the structural transition of octaneselenolate SAMs from a molecular row phase with a long-range order to a disordered phase with a high density of vacancy islands (VIs). Molecularly resolved STM imaging revealed that the missing-row ordered phase of the SAMs could be assigned as a $(6{\times}{\surd}3)R30^{\circ}$ superlattice containing three molecules in the rectangular unit cell. In addition, CA measurements showed that the structural order and defect density of VIs are closely related to the wetting behaviors of octaneselenolate SAMs on gold. In this study, we clearly demonstrate that interactions between the headgroups and gold surfaces play an important role in determining the physical properties and surface structure of SAMs.

Amino-Functionalized Alkylsilane SAM-Assisted Patterning of Poly(3-hexylthiophene) Nanofilm Robustly Adhered to SiO2 Substrate

  • Pang, Ilsun;Boo, Jin-Hyo;Sohn, Honglae;Kim, Sung-Soo;Lee, Jae-Gab
    • Bulletin of the Korean Chemical Society
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    • v.29 no.7
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    • pp.1349-1352
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    • 2008
  • We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.

A 15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications

  • Park, Chang-Hyun;Oh, Myung-Hwan;Kang, Hee-Sung;Kang, Ho-Kyu
    • ETRI Journal
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    • v.26 no.6
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    • pp.575-582
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    • 2004
  • Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

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Annealing Effect on controlling Self-Organized Ag/Ti Nanoparticles on 4H-SiC Substrate (4H-SiC기판 위의 자기구조화된 Ag/Ti 나노입자 제어를 위한 열처리 분석)

  • Kim, So-Mang;OH, Jong-Min;Koo, Sang-Mo
    • Journal of IKEEE
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    • v.20 no.2
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    • pp.177-180
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    • 2016
  • The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young's equation for the contact angles between the metal and different substrates.