• Title/Summary/Keyword: Selectivity of frequency

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New UWB BPF with Steep Selectivity Based on T-Resonator and Capacitively Coupled λ/4 and λ/2 Line Sections

  • Duong, Thai Hoa;Kim, Ihn-Seok
    • Journal of electromagnetic engineering and science
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    • v.9 no.3
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    • pp.164-173
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    • 2009
  • In this paper, two new circuit structures for European and U.S. ultra-wide band(UWB) bandpass filters(BPFs) with sharp roll-off characteristics are introduced. We show first that the ultra-wide bandpass property is obtained from a $\lambda$/4 open T resonator with a capacitively coupled $\lambda$/4 short-circuited line, which provides two attenuation poles at lower and upper cutoff frequencies. Then, two identical capacitively coupled input/output lines, which can be $\lambda$/4-length open ends or $\lambda$/2-length short ends, with the T-resonator, are adopted to suppress lower and higher frequency components outside of the pass band. There is coupling between the input and output lines providing two additional transmission zeros in the lower and upper transition bands of the filter. Since the coupling between the T-resonator with the $\lambda$/4 short-circuited line and the input/output lines limits the bandwidth of the filter to the European UWB band, both the $\lambda$/4 short-circuited line and the input/output lines are inserted between the two stacked T-resonators for the U.S. UWB band. The filter structures are simulated with ADS and HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results.

Design of Low-Pass Type Inverter: UWB Band-Pass Filter with Low Spurious Characteristics

  • Cho, Young-Ho;Choi, Moon-Gyu;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • v.11 no.2
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    • pp.83-90
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    • 2011
  • In this paper, we present the design method for a low-pass type inverter, which can effectively suppress the spurious response associated with band-pass filters. The inverter has a length of ${\lambda}/4$ and employs not only a stepped-impedance configuration but also asymmetrical and bending structures in order to improve frequency selectivity and compactness. The inverter is applied as an impedance/admittance inverter to the ultra-wideband (UWB) band-pass filter. The UWB band-pass filter configuration is based on a stub band-pass filter consisting of quarter-wavelength impedance inverters and shunt short-circuited stubs ${\lambda}/4$ in length. The asymmetrical stepped-impedance low-pass type inverter improves not only the spurious responses, but also the return loss characteristics associated with a UWB band-pass filter, while a compact size is maintained. The UWB band-pass filter using the proposed inverters is fabricated and tested. The measured results show excellent attenuation characteristics at out-band frequencies, which exceed 18 dB up to 39 GHz. The insertion loss within the pass-band (from 3.1 to 10.6 GHz) is below 1.7 dB, the return loss is below 10 dB, and the group delay is below 1 ns.

The Dry Etching Properties on TiN Thin Film Using an N2/BCl3/Ar Inductively Coupled Plasma

  • Woo, Jong-Chang;Joo, Young-Hee;Park, Jung-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.144-147
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    • 2011
  • In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

System Design Considerations for a ZigBee RF Receiver with regard to Coexistence with Wireless Devices in the2.4GHz ISM-band

  • Seo, Hae-Moon;Park, Yong-Kuk;Park, Woo-Chool;Kim, Dong-Su;Lee, Myung-Soo;Kim, Hyeong-Seok;Choi, Pyung
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.2 no.1
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    • pp.37-49
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    • 2008
  • At the present time the task of designing a highly integrated ZigBee radio frequency (RF) receiver with an excellent coexistence performance is still very demanding and challenging. This paper presents a number of system issues and design considerations for a ZigBee RF receiver, namely IEEE 802.15.4, for coexistence with wireless devices in the 2.4-GHz ISM-band. With regard to IEEE 802.15.4, the paper analyzes receiver performance requirements for; system noise figure (NF), system third-order intercept point (system-IIP3), local oscillator phase noise and selectivity. Based on some assumptions, the paper illustrates the relationship between minimum detectable signal (MDS) and various situations that involve the effects of electromagnetic interference generated by other wireless devices. We infer the necessity of much more stringent specification requirements than the published standard for various wireless communication field environments

Spectrum Sensing System Design Using RF Front-End Processing (RF단 프로세싱에 의한 스펙트럼 센싱 시스템 설계)

  • Hong, Jun Gi;Han, Sang-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.3
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    • pp.305-310
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    • 2015
  • In this paper, a wireless spectrum sensing receiver system is proposed. While a conventional Cognitive Radio(CR) system utilizes frequency down-conversion and demodulation to recognize wireless spectral signal, the proposed one is able to recover and sense valid signal at an RF front-end. It has been designed with a super-regeneration type circuit with a channel selectivity and variability for FDM applications with which a conventional single-channel super-regeneration circuit could not provide. From experimental evaluation, the implemented system has been optimized for channel allocation with quenching signal, and verified for 5 MHz-channel spacing.

A Study on The Improvement of Profile Tilting or Bottom Distortion in HARC (높은 A/R의 콘택 산화막 에칭에서 바닥모양 변형 개선에 관한 연구)

  • Hwang, Won-Tae;Kim, Gli-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.389-395
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    • 2005
  • The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

Performance Analysis of RF Transformation in DS/CDMA Receiver (DS/CDMA수신기에서 RF변환부의 성능분석)

  • Pyeon, Suk-Bum;Ju, Jae-Han
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.35T no.2
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    • pp.86-92
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    • 1998
  • In this paper, it is derived the system design parameters for the J-STD-018 of the PCS mobile station(MS) minimum performance using DS/CDMA analyzed the system performance due to the receiver components. The simulation shows the selectivity is -70.96dB at 1.25MHz frequency offset from the carrier frequency while the MS noise figure to satisfy J-STD-018 is 10dB and the input 3rd harmonics intercept point of the MS class I and MS class II-V is -9.5dBm and -14dBm respectively. When the interference power level at the receiver is small, the receiver has better performance as we increase the gain of LNA. However, when the interference level at the receiver is large, the receiver performance is decreased by the effect of the spurious. Thus, the effectiveness of LNA On/Off switching technique is proved as to reduce the effect of the spurious.

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A Study on the Effective Capacity increasement and Interference reduction technique for MC-CDMA with a Multiple Antenna System (다중 안테나 환경을 고려한 MC-CDMA 시스템에서의 효율적인 전송 용량 증대와 간섭 완화 기법에 관한 연구)

  • Cha, Dong-Ho;Lee, Kyu-Jin;Hwang, Sun-Ha;Lee, Kye-San
    • Journal of Satellite, Information and Communications
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    • v.6 no.2
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    • pp.117-124
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    • 2011
  • In this paper, we present more effective throughput enhancement technique to improve the data rate and reliability by using the multiple antenna technique. The conventional spatial diversity scheme is limited in according with the interference from each antenna channel status, and the orthogonality of spreading codes and subcarriers are destroyed due to the frequency selectivity. Proposed system is considered MC-CDMA system with 4 transmit antennas and 1 receive antenna. Proposed system based on SVD with the MS-RLS MMSE subcarrier combining method in order to achieve better performance with low computational complexity. Via computer simulation, we confirm that the proposed system is able to improve the BER performance by suppressing the interference of other antenna signals.

$3^{rd}$ Overtone Mode Energy-Trapped Filter Using $PbTiO_{3}$ System Ceramics ($PbTiO_{3}$계 조성 세라믹스를 이용한 3차 진동모드 에너지 트랩형 필터에 관한 연구)

  • Oh, Dong-On;Yoo, Ju-Hyun;Park, Chang-Yub;Yoon, Hyun-Sang;Lee, Su-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.83-86
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    • 2002
  • In this paper, $3^{rd}$ overtone mode energy-trapped filter using modified $PbTiO_3$ system ceramics was manufactured to apply for intermediate frequency SMD-type filter with the variations of splitted electrode size. To investigate the effects of splitted electrode size on filter characteristics of $3^{rd}$ overtone mode energy-trapped filter, ceramic wafers were fabricated by etching splitted rectangular electrode size($b{\times}d$) of b=0.4, 0.6, 0.8, 1mm, d=0.3, 0.4, 0.5mm, respectively. And then, SMD-type ceramic filter were fabricated with the size of $3.7{\times}3.1mm$. With the variations of b size, insertion loss, 3dB bandwidth and 25dB stop bandwidth showed nearly constant value, but with the variations of d size, insertion loss, 3dB bandwidth, selectivity(shape factor) decreased.⨀؀က?⨀Ⴣ?⨀਀Ⴣ?⨀ꞻꎀ̀ကꮻꎀༀ뮻ꎀ᠀Ȁ햻ꎀĀힻꎀȀ?ꎀ̀?ꎀȀꎀĀꎀĀꎀĀꎀĀꎀЀȀꎀࠀꎀഀڼꎀഀᒼꎀ؀ᮼꎀ䈀ȀȀ悼ꎀऀ檼ꎀഀȀ禼ꎀഀ螼ꎀऀȀȀ鎼ꎀഀȀꊼꎀഀ낼ꎀࠀ즼ꎀԀ쾼ꎀ܀ힼꎀ

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Modulation Level-Controlled Multicarrier CDMA System (변조레벨 제어 다중반송파 CDMA 시스템)

  • Whang, Bong-Jun;Park, Hyung-Kun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.9
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    • pp.1646-1653
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    • 2008
  • In this paper, we propose multicarrier CDMA system using the concept of the modulation level-controlled system in order to make the system robust to the frequency selectivity and to provide a maximum data rate maintaining an acceptable transmission quality over various channel environments. This system selects higher data rate when the channel experiences the low delay spread and slow fading. On the other hand, when the fading changes very fast and the delay spread is very long, the system selects lower data rate. In both cases, the system controls the number of serial-to-parallel converted streams and the number of fed streams. This system has the fixed number of sub-carriers. So the product of tile number of serial-to-parallel converted streams and the number of fed streams is always kept constant. With the same data fed at different sub-carriers, the frequency diversity is achieved. And a RAKE receiver also is utilized to achieve path (time) diversity.