• Applied Chemistry for Engineering
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• v.16 no.2
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• pp.267-274
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• 2005

Preparation of cellulose type underwater non-segregation admixture was attempted and the hardening characteristics of underwater concrete according to the addition of this admixture was investigated in order to make underwater concrete with the compressive strength ratio of 0.8 to that of concrete manufactured in common atmosphere. The proposed underwater non-segregation admixture consisted of methyl cellulose of 0.4% by weight, silicon type antifoaming agent of 20% by weight, and sodium aluminate of 0.1% by weight to the amount of cement as setting accelerant, respectively. As the proposed non-segregation admixture was increased, the amount of suspended solid decreased, air content in concrete was increased but the flow loses by elapsed time did not change. The proper amount added of the proposed non-segregation adimixture was 0.8 wt% to the amount of cement. The compressive strength of the test sample underwater concrete manufactured by the addition of the proposed admixture was $325Kg/cm^3$, and the ratio of compressive strength of this sample concrete to that of a concrete manufactured in air was 0.94.

• Journal of the Korean Society for Heat Treatment
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• v.1 no.1
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• pp.13-23
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• 1988

The hardenability of alloyed ductile cast irons was studied for 54 different alloy compositions obtained from eight commercial and laboratory foundries. The alloying elements investigated for their effects on hardenability were Si(2.0 to 3.0%), Mn(0.0 to 0.8%), Mo(0.0 to 0.6%), Cu(0.0 to 1.5%), and Ni(0.0 to 1.5%). Two hardenability criteria, a first-pearlite hardenability criterion and a half-hard hardenability criterion, were used to determine hardenability of ductile irons. Prediction models for each hardenability criterion were developed by multiple regression analysis and were well agreed with previous experimental results. Molybdenum was the most potent hardenability promoting element followed by manganese, copper and nickel ; silicon had little effect on hardenability and reduced the hardenability as silicon content increased. When alloying elements were presented in combination, strong synergistic effects on the hardenability were observed especially between molybdenum, copper and nickel. The hardenability of ductile iron was strongly influenced by austenitizing temperature. Increasing austenitizing temperature up to $955^{\circ}C$, hardenability increased gradually but decreasing rate and then decreased as temperature increased above $955^{\circ}C$. Unless reducing segregation by very long-time annealing treatment, the hardenability of ductile iron was not significantly influenced by segregation of alloying elements.

• Journal of Korea Foundry Society
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• v.17 no.6
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• pp.598-607
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• 1997

Fractional melting process involves heating an alloy within its liquid-solid region simultaneously ejecting liquid from the solid-liquid mixture. The extent of the purification obtained is comparable to that obtained in multi-pass zone refining. The new fractional melting process in which centrifugal force was used for separating the liquid from the mixture has been developed and applied to the purification of the metallic grade. Refining ratio depends on partition ratio, cake wetness and diffusion in the solid, and it was controlled by various processing parameters such as rotating speed and heating rate. The new parameter called "refining partition coefficient" has been suggested to estimate the effects of processing variables on the refining ratio. Because major impurities in MG-silicon such as Fe, Al, Ni have a low segregation coefficient, good purification effect is expected. The results of refining MG-silicon(98%) showed that 3N-Si was obtained in refined solid of 50% of the original sample.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.117-121
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• 1997

It is shown theoretically that uniform axial dopant concentration distribution can be made throughout the crystal by continuous Czochralski process. Numerical simulation are performed for the transient two-dimensional convection-diffusion model. A typical value of the growth and system parameters for Czochralski growth of p-type, 4 inches silicon crystal was used in the numerical calculations. Using this model with proper model parameter, the axial segregation in batchwise Czochralski growth can be described. It is studied by comparing with the experimental data. With this model parameter, the uniform axial concentration distribution of dopant is predicted in continuous Czochralski process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.111.1-111.1
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• 2011

The solar energy is dramatically increasing as the alternative energy source and the silicon(Si) solar cell are used the most. In this study, the improved process and equipment for the metallurgical refinement of multicrystalline Si were evaluated for the inexpensive solar cell. The planar plane and columnar dendrite aheadof the liquid-solid interface position caused the superior segregation of impurities from the Si. The solidification rate and thermal gradient determined the shape of dendrite in solidified Si matrix solidified by the directional solidification(DS) method. To simulate this equipment, the commercial software, PROCAST, was used to solve the solidification rate and thermal gradient. Si was vertically solidified by the DS system with Stober process and up-graded metallurgical grade or metallurgical grade Si was used as the feedstock. The inductively coupled plasma mass spectrometry (ICP) was used to measure the concentration of impurities in the refined Si ingot. According to the result of ICP and simulation, the high thermal gradient between the two phases wasable to increase the solidification rate under the identical level of refinement. Also, the separating heating zone equipped with the melting and solidification zone was effective to maintain the high thermal gradient during the solidification.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.119-125
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• 1992

Oxygen segregation in horizontal-magnetic-field-applied Czochralski (HMCZ) silicon crystals has been studied as a function of magnetic field strength (B) and crucible rotation rate (C). Along the axis of 57mm din. <100> crystals grown under B=2, 3, 4 kG and C=4-15rpm, the oxygen distribution was usually saw-tooth shaped and fluctuated unevenly. Compared to the conventional CZ method, this result seems to indicate that the horizontal magnetic field, at levels used in the present experiment, had a destabilizing influence on oxygen transport to the growth interface. On the other hand, as C increased, the oxygen fluctuation lessened, and [0] increased overall. At B=2 kG, an oxygen profile in a level of 27-36 ppma was achieved by a programmed ramp of C. Oxygen precipitation behavior of the HMCZ silicon during a simulated device manufacturing process was compared and found to be inferior to that of typical CZ silicon. The uneven oxygen profile in the as-grown state was identified as the major source of poor precipitation uniformity in the HMCZ silicon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.210-222
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• 1994

The characteristics of flows, temperatures, and concentrations of oxygen are numerically studies in the Czochralski furnace with a uniform axial magnetic field. Important governing factors to the flow fields include buoyancy, thermocapillarity, centrifugal force, magnetic force, diffusion and segregation coefficients of the oxygen, evaporation coefficient in the form of SiO, and ablation rate of crucible wall. With an assumption that the flow fields have reached the steady state, which means that two velocity components in the meridional plane and circumferential velocity, temperatures, electric current intensity become non-transient, then unsteady concentration field of oxygen has been analyzed with an initially uniform oxygen concentration. Oxygen transports due to convection and diffusion in the Czochralski flow field and oxygen flux through the growing crystal surface has been investigated.