• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.760-765
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• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.45-50
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• 2013

This paper focuses on the fundamental issues for improving the efficiency and throughput of the AC PDP (Plasma Display Panel) manufacturing. The properties of the MgO protective layer affect the PDP efficiency. Especially, the secondary electron emission efficiency was affected on the deposition rate of MgO during the evaporation. In this study, the deposition rate of 5 $\AA$/s has given the maximum efficiency value of 0.05 It is demonstrated that the impurity gases such as $H_2O$, $CO_2$, CO or $N_2$, and $O_2$ can be remained inside the PDP panel before sealing and the amount of the impurity gases decreased rapidly as the base vacuum level increased, especially near $10^{-5}$ torr. The fundamental solution in order to overcome these problems is the vacuum in-line sealing process from the MgO evaporation to the final sealing of the panel without breaking the vacuum. We have demonstrated this fundamental process technology and shown the feasibility. The firing voltage was reduced down to 285 V at the base vacuum value of $10^{-6}$ torr, whreras it was about 328 V at the base vacuum value of $10^{-3}$ torr.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.1
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• pp.80-84
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• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.620-625
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• 2007

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.550-553
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• 2010

The enhancement of quantum efficiency using a surface modified Ag anode in top-emitting organic light emitting diodes (TEOLEDs) is reported. The operation voltage at the current density of $1\;mA/cm^2$ of TEOLEDs decreased from 9.3 V to 4.3 V as the surface of anode coated with $CuO_x$ layer. The work function of these structures were quantitatively determined using synchrotron radiation photoemission spectroscopy. Secondary electron emission spectra revealed that the work function of the Ag/$CuO_x$ structure is higher by 0.6 eV than that of Ag. Thus, the $CuO_x$ structure acts as a role in reducing the hole injection barrier by about 0.6 eV, resulting in a decrease of the turn-on voltage of top-emitting light emitting diodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.906-909
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• 2006

The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.70-70
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• 2010

In the present study, to estimate the mechanical properties of 800 MPa grade weld metal, welding was carried out using 800 and 600 MPa grade flux cored arc welding (FCAW) consumable and characteristics of the weld metals were investigated. The chemical composition of weld metals was investigated by an optical emission spectroscopy (OES) method. The microstructure of weld metals was analyzed by optical microscopy (OM) and secondary electron microscopy (SEM). The compositions and sizes of inclusions which are the dominant factors for the nuclei of acicular ferrite were analyzed by an transmission electron microscopy (TEM). In addition, mechanical properties of the weld metals were evaluated through tensile tests and charpy impact tests. Mostly the acicular ferrite phase which has high strength and toughness was observed. The 600 MPa grade weld metal was consisted of 75% acicular ferrite and 25% ferrite which was formed at high temperature (grain boundary ferrite, widmanstatten ferrite, polygonal ferrite). However, the 800 MPa grade weld metal was composed of about 73% acicular ferrite and 27% low temperature phase (bainite, martensite). Toughness was considerably decreased due to the increase of tensile strength (from 600 MPa to 800 MPa). The sizes of inclusions which were observed in both weld metal were $0.4{\sim}0.8\;{\mu}m$, it is effective size to form acicular ferrite.

• Fire Science and Engineering
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• v.33 no.2
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• pp.30-38
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• 2019

Tracking, which is one of the main causes of electrical fires, is perceived as a physical phenomenon of electrical discharge. Hence tracking should be explained based on electric field analysis, conduction path by electron generation, and gas discharge physics. However, few papers have considered these details. This paper proposes a tracking mechanism including their effects on tracking progress. In order to prove this mechanism, a tracking experiment, an electric field analysis for the carbonization evolution model, and an explanation of the tracking process by gas discharge physics were conducted. From the tracking experiment, the current waveforms were measured at each stage of the tracking progress from corona discharge to tracking breakdown. The electric field analysis was carried out in order to determine the electric field on the surface of a dry-band and the high electric field region for electron generation during the generation and progress of carbonization. In this paper, the proposed tracking mechanism consisted of six stages including electron avalanche by corona discharge, accumulation of positive ions, expansion of electron avalanche, secondary electron emission avalanche, streamer, and tracking by conductive path. The pulse current waveforms measured in the tracking experiment can be explained by the proposed tracking mechanism. The results of this study will be used as the technical data to detect tracking phenomenon, which is the cause of electric fire, and to improve the proof tracking index.